EP0511560A2
Expired / Lapsed
EP
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Low voltage programmable storage element
Assignee: International Business Machines Corp
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Filing: 1992-04-16
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Granted: —
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Expires: 2012-04-16
Abstract
Abstract A programmable storage element for redundancy-programming includes a programmable antifuse circuit which includes a plurality of first resistors (F1a, F1b, F1c) and a switching circuit (QFa, QFb, QFc, QFd) for coupling the first resistors in series in response to a plurality of first control signals (Ta, Tb, Tc, Td) and for coupling the first resistors in parallel in response to a plurality of second control signals to permit programming of the first resistors, and a sensing circuit for determining whether or not the first resistors have been programmed. The state of the first resistors is determined by comparing a first voltage drop across the first resistors with a second voltage drop across a second resistor. Each of the first resistors is an unsilicided polysilicon conductor which has an irreversible resistance decrease when a predetermined threshold current is applied for a minimum period of time. <IMAGE>
Inventors
- 👤 Wagdi William Abadeer
- 👤 Badih El-Kareh
- 👤 Wayne Frederick Ellis
- 👤 Duane Elmer Galbi
- 👤 Nathan Rafael Hiltebeitel
- 👤 William Robert Tonti
- 👤 Josef Samuel Watts
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 10:49
CPC Classifications
G; G11; G11C; G11C29/00; G11C29/70; G11C29/78; G11C29/785; G11C17/00; G11C17/14; G11C17/16
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
116 words
A programmable antifuse circuit, comprising: a plurality of resistors having a series predetermined first resistance, said predetermined first resistance being reducible to a predetermined second resistance in response to an applied predetermined threshold current; and switching means for coupling said resistors in series in response to a plurality of first control signals and for coupling said resistors in parallel in response to a plurality of second control signals so as to permit application of said predetermined threshold current to said resistors, whereby each of said resistors preferably is a polysilicon conductor, and said predetermined second resistance preferably is no more than approximately 80 percent or no more than approximately 50 percent of said predetermined first resistance.
Claim 2
Dependent Claim
31 words
The programmable antifuse circuit of claim 1, wherein said plurality of resistors is at least three resistors, and wherein at least one of said three resistors is an unsilicided polysilicon conductor.
Claim 3
Dependent Claim
124 words
A programmable storage device, comprising: a plurality of first elements, whereby each of said first elements preferably is a polysilicon conductor; switching means for operatively coupling said first elements in series in response to a plurality of first control signals and for operatively coupling said first elements in parallel in response to a plurality of second control signals so as to permit programming of said first elements, whereby said switching means preferably comprises a plurality of transistors; means for determining whether or not said first elements have been programmed, said storage device preferably further comprising a second element, wherein said means for detecting comprisesg means for comparing a first voltage drop across said first elements with a second voltage drop across said second element.
Claim 4
Dependent Claim
85 words
The programmable storage device of claim 3, further comprising: a plurality of second elements; and second switching means for coupling said second elements in series in response to a plurality of third control signals and for coupling said second elements in parallel in response to a plurality of fourth control signals so as to permit programming of said second elements; wherein said means for determining comprises means for determining whether or not at least one of said first and said second elements have been programmed.
Claim 5
Dependent Claim
220 words
A semiconductor device having a programmable storage element for programming redundancy, said semiconductor device comprising: a plurality of first resistors; a plurality of second resistors, whereby each of said first resistors and said second resistors preferably is an unsilicided polysilicon conductor; a plurality of first transistors for operatively coupling said first resistors in series in response to a plurality of first control signals and for operatively coupling said resistors in parallel in response to a plurality of second control signals so as to permit programming of said first resistors using a programming current having a magnitude greater than or equal to a predetermined threshold current and having a pulse width greater than a predetermined time period; and a plurality of second transistors for operatively coupling said second resistors in series in response to a plurality of third control signals and for operatively coupling said second resistors in parallel in response to a plurality of fourth control signals so as to permit programming of said second resistors using said programming current; and a plurality of third transistors operatively coupled to produce a latch for comparing a first voltage drop across said first resistors with a second voltage drop across said second resistors to determine whether or not at least one of said first resistors and said second resistors has been programmed.
Claim 6
Independent Claim
133 words
A method for redundancy-programming a semiconductor device, said method comprising the steps of: providing a plurality of resistors having a first voltage drop, said first voltage drop being reducible to a second voltage drop in response to an applied predetermined threshold current; coupling said resistors in series in response to a plurality of first control signals; sensing one of said first and said second voltage drops, said first voltage drop and said second voltage drop corresponding to a first programming state and a second programming state, respectively; and when it is desired to change said resistors from said first programming state to said second programming state, coupling said resistors in parallel in response to a plurality of second control signals so as to permit application of said predetermined threshold current to said resistors.
Claim 7
Dependent Claim
142 words
A memory element, comprising: a programmable polysilicon means; a comparison means, sensing means disposed between said programmable polysilicon means and said comparison means for sensing differences in resistance therebetween, said sensing means preferably comprising cross-coupled latch and/or said sensing means preferably being coupled to said programmable polysilicon means and said comparison means by first and second pass transistors, respectively; means for programming said programmable polysilicon means by passing a current therethrough sufficient to decrease its resistance by a discrete amount; and output means coupled to said sensing means for producing a first signal if said programmable polysilicon means has a greater resistance than said comparison means, and for producing a second signal if said comparison means has a greater resistance than said programmable polysilicon means, whereby said programmable polysilicon means preferably has a greater resistance than said comparison means prior to programming.
Claim 8
Dependent Claim
24 words
The memory element of claim 7, wherein said programmable polysilicon means and said comparison means have resistances that are substantially equal prior to programming.
Claim 9
Dependent Claim
24 words
The memory element of claims 7 or 8, wherein said first pass transistor isolates said programmable polysilicon means from said sensing means during programming.
Claim 10
Dependent Claim
22 words
The memory element of any one of the claims 7 to 9, wherein said comparison means comprises a second programmable polysilicon means.
References Cited (Backward Citations)
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