EP0509305A1
Expired / Lapsed
EP
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Method of depositing conductors in high aspect ratio apertures
Assignee: International Business Machines Corp
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Filing: 1992-03-31
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Granted: —
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Expires: 2012-03-31
Abstract
Abstract A sputtering deposition wherein high aspect ratio apertures (50) are coated with conductive films (40) exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator (60) is used having an aspect ratio that approximates the aspect ratio of the apertures (50). The resulting film thickness at the bottom of the aperture is at least 2X what can be achieved using conventional sputtering methods.
Inventors
- 👤 Pei-Ing P. Lee
- 👤 Thomas J. Licata
- 👤 Thomas L. Mcdevitt
- 👤 Paul C. Parries
- 👤 Scott L. Pennington
- 👤 James G. Ryan
- 👤 David C. Strippe
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 08:55
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; C; C23; C23C; C23C14/00; C23C14/04; C23C14/042; C23C14/044; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/44; H10W20/056; H05; H05K; H05K3/00; H05K3/40; H05K3/4038; H05K3/4076
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
58 words
A process for sputtering a layer of conductive material (40) on a substrate (10, 30) having a surface topography that includes at least one depression (50) having an aspect ratio of at least 1:1, comprising sputtering said conductive material through a collimator (60) having an aspect ratio of approximately 1:1 or greater prior to deposition on said substrate.
Claim 2
Dependent Claim
72 words
The process as recited in claim 1 for sputtering said conductive material (40) through a collimator (60) onto a insulator layer (30), said conductive layer (40) having a thickness at the bottom of said at least some of said plurality of apertures (50) that is at least 10% of the thickness of said conductive material on said insulator layer, said sputtering step being carried out at pressures less than approximately 3-4 mTorr.
Claim 3
Dependent Claim
22 words
The process as recited in claim 1 or 2, wherein at least some of said apertures have an aspect ratio of 2:1.
Claim 4
Dependent Claim
20 words
The process as recited in anyone of the claims 1 to 3, wherein said conductive material is a refractory metal.
Claim 5
Dependent Claim
18 words
The process as recited in anyone of the claims 1 to 4, wherein said conductive material comprises titanium.
Claim 6
Dependent Claim
19 words
The process as recited in anyone of the claims 1 to 4, wherein said conductive material comprises titanium nitride.
Claim 7
Dependent Claim
18 words
The process as recited in claim 6, wherein said sputtering step is carried out in an N2 ambient.
Claim 8
Dependent Claim
156 words
The process as recited in claims 1 to 6 used for forming an integrated circuit structure, comprising the steps of: defining a plurality of apertures (50) in an insulator layer (30) disposed on an integrated circuit substrate (10), said plurality of apertures (50) having sidewalls and a bottom, at least some of said plurality of apertures (50) having an aspect ratio of approximately 1:1 or greater; depositing a conductive material (40) on said insulating layer (30) and on said sidewalls and said bottom of said plurality of apertures (50) therein, said conductive material (40) having a thickness at said bottom of said at least some of said plurality of apertures (50) that is at least 10% of the thickness of said conductive material on said insulating layer (30), wherein during said deposition atoms of said conductive material (40) pass through a collimator (60) to substantially enhance deposition on said bottom of said plurality of apertures (50).
Claim 9
Dependent Claim
42 words
In a sputtering process for depositing a conductive layer within high aspect ratio depressions on the surface of an integrated circuit substrate, the improvement comprising disposing a collimator above the substrate, and carrying out said process under conditions that reduce gas scattering.
Claim 10
Dependent Claim
22 words
The process as recited in claim 9, wherein said sputtering process is carried out at a pressure of less than 1.3 mTorr.
References Cited (Backward Citations)
EP0044372A2
Cited
US4822753A
Cited
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