Patent US2815264A successfully refreshed from Google Patents.
EP0506450A2
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A Schottky barrier diode and a method of manufacturing thereof
Assignee: Murata Manufacturing Co Ltd
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Filing: 1992-03-27
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Granted: —
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Expires: 2012-03-27
Abstract
Abstract A Schottky barrier diode includes a semiconductor substrate (10), an ohmic metal electrode (20) formed on a first region of the semiconductor substrate (10), and a Schottky metal electrode (30) formed on a second region spaced apart from the first region on the semiconductor substrate (10). The Schottky electrode (30) includes at least one ohmic portion (31) forming an ohmic contact with the semiconductor substrate (10), whereby rectifying characteristics of the Schottky barrier diode are improved.
Inventors
- 👤 Hisashi c/o Murata Manufact. Co. Ltd. Ariyoshi
- 👤 Masaaki c/o Murata Manufact. Co. Ltd. Sueyoshi
- 👤 Kouichi c/o Murata Manufact. Co. Ltd. Sakamoto
- 👤 Susumu c/o Murata Manufact. Co. Ltd. Fukuda
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-27 15:15
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/01; H10D8/051; H10D64/00; H10D64/01; H10D64/011; H10D8/60; Y; Y10; Y10S; Y10S257/00; Y10S257/916
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
87 words
A Schottky barrier diode, comprising: a semiconductor substrate (10) having a prescribed concentration of a conductivity type determining impurity, an ohmic metal electrode (20) formed on a first region of said semiconductor substrate (10), and a Schottky metal electrode (30) formed on a second region spaced apart from said first region on said semiconductor substrate (10), wherein said Schottky electrode (30) includes at least one ohmic portion (31) forming an ohmic contact with said semiconductor substrate (10), whereby rectifying characteristics of said Schottky barrier diode are improved.
Claim 2
Dependent Claim
47 words
The Schottky barrier diode according to claim 1, wherein said substrate (10) comprises a plate-like configuration, and wherein said first region is located on a first main surface of said substrate (10), and said second region is located on a second main surface of said substrate (10).
Claim 3
Dependent Claim
33 words
The Schottky barrier diode according to claim 1, wherein said substrate (10) comprises a plate-like configuration, and said first and second regions are located on the same main surface of said substrate (10).
Claim 4
Dependent Claim
24 words
The Schottky barrier diode according to claim 3, wherein said ohmic electrode (20) surrounds said Schottky electrode (30) to serve as a guard ring.
Claim 5
Dependent Claim
34 words
The Schottky barrier diode according to claim 1, wherein said second region comprises at least one projection (12), and wherein said ohmic portion (31) covers at least the top portion of said projection (12).
Claim 6
Dependent Claim
21 words
The Schottky barrier diode according to claim 5, wherein said ohmic portion (31) further covers the sidewall of said projection (12).
Claim 7
Dependent Claim
27 words
The Schottky barrier diode according to claim 5, wherein said projection (12) includes a transversing layer (10b) of relatively low concentration of a conductivity type determining impurity.
Claim 8
Dependent Claim
23 words
The Schottky barrier diode according to claim 5, wherein said projection (12) has a relatively low concentration of a conductivity type determining impurity
Claim 9
Dependent Claim
48 words
The Schottky barrier diode according to claim 5, wherein said projection (12) and a semiconductor layer (10b) from the interface of said substrate (10) and said Schottky electrode (30) to a prescribed depth have a relatively low concentration of a conductivity type determining impurity in said second region.
Claim 10
Dependent Claim
35 words
The Schottky barrier diode according to claim 5, wherein a high resistance layer (40) is further provided between said Schottky electrode (30) and said substrate (10) excluding said projection region (12) in said second region.
Claim 11
Dependent Claim
34 words
The Schottky barrier diode according to claim 5, wherein an insulation layer (40) is further provided between said Schottky electrode (30) and said substrate (10) excluding said projection region (12) in said second region.
Claim 12
Independent Claim
116 words
A method of manufacturing a Schottky barrier diode, comprising the steps of: forming an ohmic metal electrode (20) on a first region of a semiconductor substrate (10), forming at least one small ohmic contact metal film (31) in a second region spaced apart from said first region on said substrate (10), and then forming a Schottky contact metal film (32) so as to cover said second region, whereby a Schottky metal electrode (30) is easily formed including said ohmic contact metal film (31) covered by a Schottky contact metal film (32) with reliable electrical connection therebetween, and without need of precise positioning of said ohmic contact metal film (31) and said Schottky contact metal film (32).
Claim 13
Independent Claim
107 words
A method of manufacturing a Schottky barrier diode, comprising the steps of: forming an ohmic metal electrode (20) on a first region of a semiconductor substrate (10), forming at least one small ohmic contact metal film (31) in a second region spaced apart from said first region on said substrate (10), etching anisotropically said second region of said substrate (10) excluding the region covered by said ohmic contact metal film (31) to form a projection (12) of said substrate (10) beneath said ohmic contact metal film (31), and forming a Schottky contact metal film (32) covering said second region while covering said ohmic contact metal film (31).
Claim 14
Independent Claim
132 words
A method of manufacturing a Schottky barrier diode, comprising the steps of: forming an ohmic metal electrode (20) on a first region of a semiconductor substrate (10), forming at least one small ohmic contact metal film (31) in a second region spaced apart from said first region on said substrate (10), etching anisotropically said second region of said substrate (10) excluding the region covered by said ohmic contact metal film (31) to form a projection (12) of said substrate (10) beneath said ohmic contact metal film (31), forming a high resistance layer (40) covering said second region excluding said projection region (12) on said substrate (10), and forming a Schottky contact metal film (32) covering said second region while covering said ohmic contact metal film (31) and said high resistance layer (40).
Claim 15
Independent Claim
131 words
A method of manufacturing a Schottky barrier diode, comprising the steps of: forming an ohmic metal electrode (20) on a first region of a semiconductor substrate (10), forming at least one small ohmic contact metal film (31) in a second region spaced apart from said first region on said substrate (10), etching anisotropically said second region of said substrate (10) excluding the region covered by said ohmic contact metal film (31) to form a projection (12) of said substrate (10) beneath said ohmic contact metal film (31), forming (an) insulation layer (40) covering said second region excluding said projection region (12) on said substrate (10), and forming a Schottky contact metal film (32) covering said second region while covering said ohmic contact metal film (31) and said (an) insulation layer (40).
Claim 16
Dependent Claim
49 words
A Schottky barrier diode having two electrodes (20, 30) formed on different regions of a substrate (10), wherein one electrode (30) includes at least one ohmic portion (31) for forming a current blocking depletion layer region (12) in a first state and a conduction channel in a second state.
Claim 17
Independent Claim
54 words
A method of forming a Schottky barrier diode having two electrodes (20, 30) and a substrate (10) including the step of forming at least one ohmic portion (31) connected to one electrode (30) for forming a current blocking depletion layer region (12) in a first state and a conduction channel in a second state.
References Cited (Backward Citations)
No citation records indexed.
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