EP0505249A1
Expired / Lapsed
EP
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Apparatus for growing mixed compound semiconductor and growth method using the same
Assignee: Fujitsu Ltd
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Filing: 1992-03-16
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Granted: —
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Expires: 2012-03-16
Abstract
Abstract The apparatus comprises a reactor chamber (4) of a horizontal type, comprising a partition plate (9) separating an upstream region of the reactor chamber into an upper and a lower region (resp. 15,16). The upper and lower regions are joined together to define a growth region (17) on the downstream side of the reactor chamber. A first and a second inlet port (resp. 11,12) are provided at the upstream end of the lower region for admitting a first and a second source gas respectively, while a third inlet port (13) is provided at the upstream end of the upper region for admitting a third source gas. An outlet port (8) is provided at the downstream end of the growth region for exhaust. A substrate stage (6) is arranged in the growth region, such that the substrate surface is exposed to the growth region and forms a smooth surface for allowing a laminar gas flow. There is also disclosed a similar apparatus equipped with four inlets.
Inventors
- 👤 Tetsuo C/O Fujitsu Limited Saito
- 👤 Hironori C/O Fujitsu Limited Nishino
- 👤 Satoshi C/O Fujitsu Limited Murakami
- 👤 Yoichiro C/O Fujitsu Limited Sakachi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 12:56
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45502; C23C16/45504; C23C16/22; C23C16/30; C23C16/305; C23C16/306; C23C16/448; C23C16/4481; C23C16/4482; C23C16/45561; C23C16/45587; C23C16/45591; C30; C30B; C30B25/00; C30B25/02; C30B25/10; C30B25/14; C30B29/00; C30B29/10; C30B29/46; C30B29/48
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
200 words
An apparatus for growing a compound semiconductor layer comprising at least three elements utilizing a plurality of source gases, said apparatus comprising; a reactor chamber (4) of a horizontal type, the reactor chamber comprising a partition plate (9) separating the upstream region of the reactor chamber (4) into an upper region (15) and a lower region (16), the upper and lower regions (15, 16) being joined together forming a growth region (17) on the downstream side of the reactor chamber(4); a first (11) and a second inlet port (12) provided at the upstream end of said lower region (16) for admitting a first and a second source gas respectively, and a third inlet port (13) provided at the upstream end of said upper region (15) for admitting a third source gas, thereby binary semiconductor formation energy of the third source gas reacting with another one of source gases being the smallest, and an outlet port (8) provided at the downstream end of said growth region (17) for exhaust; and a substrate stage (5) for disposing a substrate (6), thereby said substrate surface being exposed to said growth region (17) and forming a smooth surface for allowing a laminar gas flow.
Claim 2
Dependent Claim
72 words
An apparatus for growing a compound semiconductor layer as recited in claim 1, said apparatus further comprising a preliminary heating unit (33) arranged in said reactor chamber (4), said preliminary heating unit (33) being located near said substrate (5) and on the upstream side of said substrate, and a substantial surface portion of the preliminary heating unit (33) being exposed to said lower region (16) forming a smooth surface for gas flow.
Claim 3
Dependent Claim
28 words
An apparatus for growing a compound semiconductor layer as recited in claim 1, said apparatus further comprising means (14) for heating said reactor chamber arranged outside the chamber.
Claim 4
Dependent Claim
86 words
An apparatus for growing a compound semiconductor layer as recited in claim 1, said reactor chamber (4) further comprising a supplementary region (30) separated by a auxiliary partition plate (31) from said lower region (16) and growth region (17), the supplementary region (30) furnishing a space for arranging said substrate stage (5), said preliminary heating unit (33), and support members (35), and the auxiliary partition plate (31) being provided with openings for exposing the substrate surface and the preliminary heating unit (33) to the gas flow.
Claim 5
Dependent Claim
146 words
An apparatus for growing a compound semiconductor layer as recited in claim 1, said reactor chamber (4) further comprising a second partition plate (18) arranged in parallel with and below said partition plate (9), the second partition plate (18) having a length shorter than the length of said partition plate (9) and extending from the upstream end toward said growth region (17), a first lower region (16a) and a second lower region (16b) being formed in said lower region (16), the first lower region (16a) provided with said first and second inlet ports (11, 12), and a fourth inlet port provided at the upstream end of the second lower region (16b) for admitting a fourth source gas to flow into the second lower region (16b), thereby binary semiconductor formation energy of the fourth source gas reacting with another one of source gases being the next smallest.
Claim 6
Dependent Claim
59 words
An apparatus for growing a compound semiconductor layer as recited in claim 1, wherein said first inlet port (11) is provided at the bottom portion of said lower region (16) and said second and third inlet ports (12, 13) are provided at the side portion of said reactor chamber corresponding to said lower and upper regions (16, 15) respectively.
Claim 7
Dependent Claim
36 words
An apparatus for growing a compound semiconductor layer as recited in claim 5, wherein said fourth inlet port (19) is provided at the side portion of said reactor chamber corresponding to said second lower region (16b).
Claim 8
Dependent Claim
53 words
An apparatus for growing a compound semiconductor layer as recited in claim 1, wherein said compound semiconductor layer is of a II-VI group ternary compound semiconductor, and said first and third source gases respectively comprise a different element selected among group II elements, and said second source gas comprises a group VI element.
Claim 9
Dependent Claim
54 words
An apparatus for growing a compound semiconductor layer as recited in claim 1, wherein said compound semiconductor layer is of a II-VI group quaternary compound semiconductor, and said first, third and fourth source gases respectively comprise a different element selected among group II elements, and said second source gas comprises a group VI element.
Claim 10
Dependent Claim
40 words
An apparatus for growing a compound semiconductor layer as recited in claim 8, wherein said ternary compound semiconductor layer is of Hg 1-x Cd x Te, and said first, second and third source gases comprise respectively mercury, diisopropyltellurium and dimethylcadmium.
Claim 11
Dependent Claim
44 words
An apparatus for growing a compound semiconductor layer as recited in claim 9, wherein said quaternary compound semiconductor layer is of Hg 1-x-z Cd x Zn z Te, and said first, second, third and fourth source gases comprise respectively mercury, diisopropyltellurium, dimethylcadmium and diethylzinc.
Claim 12
Independent Claim
43 words
An apparatus for growing a compound semiconductor layer as recited in claims 1 or 5, wherein a plurality of nozzles are provided with each of said inlet ports (11, 12, 13, 19), and source gas flow through each nozzle can be controlled individually.
Claim 13
Independent Claim
97 words
An apparatus for growing a compound semiconductor layer as recited in claims 10 or 11, wherein said first source gas of mercury is supplied from a mercury bubbler (1), the mercury bubbler comprising; a main bubbler unit (24); a heater (14′) for heating the main bubbler unit (24) at a predetermined temperature; a mercury reservoir (23) connected to the main bubbler unit (24) by a connection pipe (25); and a piston pump (27) attached to the mercury reservoir (23), a mercury level in the main bubbler unit (24) being controlled by the movement of the piston pump.
Claim 14
Independent Claim
135 words
A method of growing a ternary compound semiconductor layer utilizing a first, a second and a third source gas, each source gas comprising a first to a third element respectively constituting the ternary compound semiconductor, whereby binary semiconductor formation energy of the third source gas reacting with the second source gas is smaller than that of the first source gas reacting with the second source gas, said method comprising the steps of; mixing said first and second source gases and flowing the mixed gas toward a growth region, the mixed gas being heated at a predetermined temperature before arriving the growth region; flowing said third source gas and mixing with said previously mixed first and second source gases in the growth region where a substrate is disposed; and heating said substrate at a predetermined temperature.
Claim 15
Dependent Claim
41 words
A method of growing a ternary compound semiconductor layer as recited in claim 14, wherein said ternary compound semiconductor layer is of Hg 1-x Cd x Te, and said first, second and third source gases comprise respectively mercury, diisopropyltellurium and dimethylcadmium.
References Cited (Backward Citations)
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