High-frequency apparatus using quartz crystal resonator and its production method

Claim 2

A high-frequency apparatus as claimed in claim 1, wherein said semiconductor substrate is a silicon substrate onto which said quartz crystal resonator is directly bonded with coupling of oxygen and silicon.

Claim 3

A high-frequency apparatus as claimed in claim 1, wherein said semiconductor substrate is a silicon substrate onto which said quartz crystal is directly bonded with coupling of hydrogen or hydroxyl group.

Claim 4

A high-frequency apparatus using a quartz crystal resonator which is bonded onto a semiconductor substrate with a glass.

Claim 5

A high-frequency apparatus as claimed in either claim 1 or claim 4, wherein said semiconductor substrate has at least a transistor formed thereon.

Claim 6

A high-frequency apparatus as claimed either claim 1 or claim 4, wherein said high-frequency apparatus is a voltage controlled oscillator.

Claim 7

A production method of a high-frequency apparatus using a quartz crystal resonator comprising the steps of: treating a semiconductor substrate at a temperature of 870°C or more; bonding a quartz crystal plate directly to said semiconductor substrate; removing said semiconductor substrate only in an a part of area just beneath said quartz crystal plate leaving an area necessary to hold said quartz crystal by an etching method to form a quartz crystal resonator; and treating said semiconductor substrate having the quartz crystal resonator directly bonded thereto at a temperature of 860°C or less, whereby a transistor and said quartz crystal resonator are integrated in a unitary body therewith.

Claim 8

A production method as claimed in claim 7, wherein said semiconductor substrate is a silicon substrate onto which said quartz crystal plate is directly bonded with coupling of oxygen and silicon.

Claim 9

A production method as claimed in claim 7, wherein said semiconductor substrate is a silicon substrate onto which said quartz crystal plate is directly bonded with coupling of hydrogen or hydroxyl group.

Claim 10

A production method as claimed in claim 1, wherein said semiconductor substrate and quartz crystal plate which have respectively thoroughly cleaned surfaces are superposed and heated at a temperature ranging from 300 to 800°C thereby being directly bonded to each other.

Claim 11

A production method of a high-frequency apparatus using a quartz crystal resonator comprising the steps of: treating a semiconductor substrate at a temperature of 870°C or more; bonding a quartz crystal plate onto said semiconductor substrate with a glass; removing said semiconductor substrate only in a part of an area just beneath said quartz crystal plate leaving an area necessary to hold said quartz crystal plate by an etching method to form a quartz crystal resonator; and treating said semiconductor substrate having the quartz crystal resonator bonded thereto at a temperature below a melting point of said glass, whereby a transistor and said quartz crystal resonator are integrated in a unitary body therewith.

Claim 12

A production method as claimed in either claim 7 or claim 11, wherein said high-frequency apparatus is a voltage controlled oscillator.

Claim 13

A production method of a high-frequency apparatus using a quartz crystal resonator comprising the steps of: treating a semiconductor substrate at a temperature of 870°C or more; bonding a quartz crystal plate directly to said semiconductor substrate; processing said quartz crystal plate so as to have a thickness of 5 µm or less and removing said semiconductor substrate only in a part of an area just beneath said quartz crystal plate leaving an area necessary to hold said quartz crystal plate by applying an etching method from a surface of said semiconductor substrate opposite to a surface on which said quartz crystal plate is formed to form a quartz crystal resonator; and treating said semiconductor substrate having the quartz crystal resonator directly bonded thereto at a temperature below a melting point of said glass, whereby a transistor and said quartz crystal resonator are integrated in a unitary body therewith.

Claim 14

A production method as claimed in claim 13, wherein said semiconductor substrate is a silicon substrate onto which said quartz crystal plate is directly bonded with coupling of oxygen and silicon.

Claim 15

A production method as claimed in claim 13, wherein said semiconductor substrate is a silicon substrate onto which said quartz crystal plate is directly bonded with coupling of hydrogen or hydroxyl group.

Claim 16

A production method as claimed in claim 13, wherein said semiconductor substrate and quartz crystal plate which have respectively thoroughly cleaned surfaces are superposed and heated at a temperature ranging from 300 to 800°C thereby being directly bonded to each other.

Claim 17

A production method of a high-frequency apparatus using a quartz crystal resonator comprising the steps of: treating a semiconductor substrate at a temperature of 870°C or more; bonding a quartz crystal plate onto said semiconductor substrate with a glass; processing said quartz crystal plate so as to have a thickness of 5 µm or less and removing said semiconductor substrate only in a part of an area just beneath said quartz crystal plate leaving an area necessary to hold said quartz crystal plate by applying an etching method from a surface of said semiconductor substrate opposite to a surface on which said quartz crystal plate is formed to form a quartz crystal resonator, and treating said semiconductor substrate having the quartz crystal resonator bonded thereto at a temperature below a melting point of said glass, whereby a transistor and said quartz crystal resonator are integrated in a unitary body therewith.

Claim 18

A production method as claimed in either claim 13 or claim 17, wherein said high-frequency apparatus is a voltage controlled oscillator.