EP0502590A2
Expired / Lapsed
EP
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Semiconductor device comprising an organic material
Assignee: Canon Inc
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Filing: 1987-07-10
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Granted: —
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Expires: 2007-07-10
Abstract
Abstract A semiconductor device comprises a semiconductor having insulating layers (9) and conductive layers (8) laminated alternately. The semiconductor comprises an organic film, and electrodes (10) are provided on the semiconductor.
Inventors
- 👤 Ken C/O Canon Kabushiki Kaisha Eguchi
- 👤 Haruki Kawada
- 👤 Kunihiro Sakai
- 👤 Yoshinori Tomida
- 👤 Hiroshi Matsuda
- 👤 Toshiaki Kimura
- 👤 Kiyoshi Takimoto
- 👤 Toshihiko Miyazaki
- 👤 Yuko Morikawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 01:23
CPC Classifications
H; H10; H10K; H10K85/00; H10K85/60; H10K85/649; H10K85/654; B; B82; B82Y; B82Y10/00; H10K10/00; H10K10/40; H10K10/43; H10K10/46; H10K10/701; H10K85/611; H10K85/652; H10K85/655; H10K85/657; H10K85/6572; H10K85/701
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
106 words
A semiconductor device comprising a substrate (2), a semiconductor defined by a multiplicity of layers on the substrate with successively a first layer (29, Fig 10) of an insulating organic material, a second layer (28) which is an inorganic conducting or semiconducting material and a third layer (30) of an insulating organic material, and first and second electrodes (26, 27) connected at different locations to the semiconductor, the layers (28, 29, 30) and the electrodes (26, 27) being arranged so that when there is a voltage between the electrodes a tunnel current flows across the first and third layers (29, 30) via the second layer (28).
Claim 2
Dependent Claim
106 words
A semiconductor device comprising a substrate (2), a semiconductor defined by a multiplicity of layers on the substrate with successively a first layer (29, Fig 10) of an insulating organic material, a second layer (28) which is an inorganic conducting or semiconducting material and a third layer (30) of an insulating organic material, and first and second electrodes (26, 27) connected at different locations to the semiconductor, the layers (28, 29, 30) and the electrodes (26, 27) being arranged so that when there is a voltage between the electrodes a tunnel current flows across the first and third layers (29, 30) via the second layer (28).
Claim 3
Dependent Claim
19 words
A device according to claim 1, wherein the semiconductor (28, 29, 30) is positioned between the electrodes (26, 27).
Claim 4
Dependent Claim
18 words
A device according to claim 1 or 2, wherein the semiconductor exhibits non-linear current/voltage characteristics (negative electrical resistance).
Claim 5
Independent Claim
33 words
A device according to any preceding claim, wherein the insulating layers (29, 30) are defined by monomolecular films or built-up films of molecules having a conductive hydrophilic part and an insulating hydrophobic part.
Claim 6
Independent Claim
59 words
A device according to any preceding claim, further comprising a third electrode (36, Fig 12) connected to the inorganic conductive or semiconductive layer (28) of the semiconductor the first and second electrodes (26, 27) acting as emitter and collector electrodes the current between which depends on the current between the third or base electrode (28) and the emitter electrode.
Claim 7
Dependent Claim
12 words
A device according to claim 5 arranged to act as an amplifier.
Claim 8
Dependent Claim
12 words
A device according to claim 5 arranged to act as a switch.
Claim 9
Independent Claim
21 words
A device according to any preceding claim, wherein said organic insulating layer has a thickness several A to several hundred A.
Claim 10
Dependent Claim
20 words
A device according to claim 8, wherein said organic insulating layer has a thickness of 20 A to 100 A.
Claim 11
Independent Claim
26 words
A device according to any preceding claim, wherein said inorganic conductive layer has a thickness in the range of from several A to several hundred A.
Claim 12
Dependent Claim
24 words
A device according to claim 10, wherein said inorganic conductive layer has a thickness in the range of from 10 A to 100 A.
Claim 13
Independent Claim
23 words
A device according to any preceding claim, wherein said inorganic conductive layer is a thin film formed from a metal or an alloy.
Claim 14
Dependent Claim
18 words
A device according to claim 12, wherein said metal or alloy comprises Al, Ag, Au, Ni or Pt.
Claim 15
Dependent Claim
64 words
The semiconductor device of any of claims 1 to 11, wherein said inorganic conductive layer is a thin film formed from a substance containing Si or Ge, a substance containing an element selected from Group IIIB and an element slected from Group VB, or a substance containing an element from Group IIB and an element selected from Group VIB of the long-form periodic table.
Claim 16
Dependent Claim
29 words
A device according to claim 14, wherein said element selected from Group IIIB is a Ga or In and said element selected from Group VB is As or P.
Claim 17
Dependent Claim
29 words
A device according to claim 14, wherein said element selected from Group IIB is Cd or Zn and said element selected from Group VIB is S, Se or O.
Claim 18
Independent Claim
22 words
A device according to any of claims 1 to 11, wherein said inorganic conductive layer is a thin film formed from silicide.
Claim 19
Dependent Claim
15 words
A device according to claim 17, wherein said silicide is nickel silicide or palladium silicide.
References Cited (Backward Citations)
No citation records indexed.
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