EP0502209A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method and apparatus for growing compound semiconductor crystals
Assignee: Fujitsu Ltd
•
Filing: 1991-09-20
•
Granted: —
•
Expires: 2011-09-20
Abstract
Abstract Compound semiconductor crystals are grown through the organometallic vapor phase epitaxial method vertically by supplying the epitaxial gas divided into a plurality of flows so that each flow rate is adjusted from sub-injectors (11) arranged to cover the entire surface of a substrate (3) to grow crystals to the entire surface of the substrate (3). The method and apparatus of the present invention are effective especially for growth of quaternary III-V compound semiconductor crystals.
Inventors
- 👤 Makoto Fujitsu Limited 1015 Kamikodanaka Kondo
- 👤 Hiroshi Fujitsu Limited Sekiguchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 05:30
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45561; C30; C30B; C30B25/00; C30B25/02; C30B25/14; Y; Y10; Y10S; Y10S438/00; Y10S438/935
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
119 words
A method of depositing a crystal of a compound semiconductor by supplying a deposition gas containing two or more material gases to a reaction chamber, and pyrolyzing the material gases to thereby deposit a compound semiconductor crystal on a substrate placed in the reaction chamber, characterized by dividing the stream of the deposition gas supplied to the reaction chamber into a plurality of streams, individually adjusting the flow rates of the divided streams, and vertically supplying the respective divided streams having the adjusted flow rate to the entire surface of the substrate through jet ports arranged in such a manner that said jet ports cover the entire surface of the substrate on which the crystal is to be deposited.
Claim 2
Dependent Claim
20 words
The method according to Claim 1, characterized by supplying the divided streams to the respective jet ports one by one.
Claim 3
Dependent Claim
35 words
The method according to Claim 2, characterized by sub-dividing at least a part of the divided streams having controlled flow rates, and supplying said sub-divided gas streams to the respective jet ports one by one.
Claim 4
Dependent Claim
61 words
The method according to Claim 2, characterized by adjusting the flow rates of the divided streams in such a manner that, for each of groups of the jet ports corresponding to at least three areas of the center of the substrate, the outer end, and intermediately therebetween, the flow rates supplied from the respective jet ports to the substrate are constant.
Claim 5
Dependent Claim
25 words
The method according to Claim 1, characterized in that the crystal to be deposited on the substrate is a crystal of a III-V compound semiconductor.
Claim 6
Dependent Claim
15 words
The method according to Claim 5, characterized in that the III-V compound semiconductor is InGaAsP.
Claim 7
Dependent Claim
26 words
The method according to Claim 6, characterized in that the materials of four elements in InGaAsP of the compound semiconductor are trimethylindium, triethylgallium, arsine, and phosphine.
Claim 8
Dependent Claim
15 words
The method according to Claim 5, characterized in that the III-V compound semiconductor is AlGaInP.
Claim 9
Dependent Claim
26 words
The method according to Claim 8, characterized in that the materials of four elements in AlGaInP of the compound semiconductor are trimethylalminum, triethylgallium, trimethylindium, and phosphine.
Claim 10
Independent Claim
251 words
An apparatus for depositing a crystal of a compound semiconductor, comprising (a) a gas supply system for supplying a deposition gas containing two or more material gases for forming a crystal of a compound semiconductor in a reaction chamber, (b) a reaction system consisting of a reaction enclosure for defining an extent of the reaction chamber and depositing the crystal of the compound semiconductor therewithin, a susceptor provided in the reaction enclosure and holding a substrate on which the crystal of the compound semiconductor is to be deposited, a gas injector for vertically supplying the deposition gas to the substrate on the susceptor, and provided at the top of the reaction enclosure while facing the susceptor, and a means for heating the substrate, and (c) a gas exhaust system for exhausting spent deposition gas containing a by-product of a pyrolysis reaction of the material gases in the reaction chamber to the outside of the reaction enclosure, characterized in that the gas supply system has a plurality of divided flow paths for the deposition gas, and control means are provided in each of the divided flow paths for individually adjusting flow rates of the deposition gas, the gas injector in the reaction system consists of a plurality of sub-injectors densely aggregated in such a manner that said sub-injectors cover the entire surface of the substrate placed on the susceptor, and the respective flow paths of deposition gas having individually controlled flow rates thereof are connected to the respective sub-injectors one by one.
Claim 11
Dependent Claim
71 words
The apparatus according to Claim 10, characterized in that the gas supply system has a manifold for mixing the raw material gases with a carrier gas to prepare the deposition gas, and the flow path of the deposition gas supplied from the manifold is divided, the gas flow rate in each of the divided flow paths being independently controlled by a mass flow controller provided in each of the flow paths.
Claim 12
Dependent Claim
37 words
The apparatus according to Claim 11, characterized in that the divided flow paths are sub-divided downstream of the flow rate control means, and the sub-divided flow paths are connected to the respective different sub-injectors one by one.
Claim 13
Dependent Claim
31 words
The apparatus according to Claim 10, characterized in that the gas injector is formed of a sub-injector provided in the center and a group of sub-injectors provided around the central sub-injector.
Claim 14
Dependent Claim
75 words
The apparatus according to Claim 13, characterized in that the gas injector is formed of a central sub-injector, a group of sub-injectors surrounding the central sub-injector, and a group of sub-injectors further surrounding said group of sub-injectors, and arranged in such a manner that the sub-injectors cover the entire surface of the substrate, while dividing said entire surface of the substrate into at least three areas of the center, the outer end, and intermediately therebetween.
Claim 15
Dependent Claim
19 words
The apparatus according to Claim 10, characterized in that the sub-injectors have a circular or regular hexagonal cross section.
Claim 16
Dependent Claim
32 words
The apparatus according to Claim 15, characterized in that the openings of the sub-injectors are extended by obliquely removing tube walls at end portions of sides thereof connected with the reaction chamber.
Claim 17
Dependent Claim
22 words
The apparatus according to Claim 10, which is used for depositing a crystal of a compound semiconductor on one or more substrates.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.