EP0499855A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method and structure for microelectronic device incorporating low-resistivity straps between conductive regions
Assignee: Texas Instruments Inc
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Filing: 1992-01-30
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Granted: —
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Expires: 2012-01-30
Abstract
Abstract A microelectronic device (10) provides decreased contact and sheet resistivity for strap (24) and decreased contact resistivity with respect to gate (14) and/or moat (16). The inventive method allows strap (24) to overpass unrelated gate (20) if desired. In accordance with the invention, unrelated conductor (20) can be electrically isolated from overlying strap (24) by virtue of insulating (22). Further, strap (24) is formed to include titanium silicide layer (130) and noncrystalline silicon sublayer (132). Additionally, the strap formation process allows the patterning and removal of the silicide-forming metal, such as titanium, prior to the intended reaction of such metal with noncrystalline silicon to form a silicide, thereby avoiding the potential creation of undesired titanium oxide compounds which may generate undesirable shorting effects.
Inventors
- 👤 Mark S. Rodder
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 10:08
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/066
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
189 words
A method of forming a microelectronic device, said device incorporating low-resistivity straps between regions, the method comprising: (a) providing a substrate having a first region and a second region; (b) forming an insulating layer over said substrate; (c) removing selected portions of said insulating layer so as to at least partially expose both of said first and second regions; (d) forming a thin layer of a conductive, substrate-reactive material over said insulating layer and over said substrate so that said substrate-reactive material makes contact with said first and second regions; (e) forming a layer of semiconductor material over said layer of substrate-reactive material; (f) etching said layer of semiconductor material and said layer of substrate-reactive material so as to define a conducting strap between said first and second regions; and (g) reacting said layer of substrate-reactive material with said layer of semiconductor material and said first and second regions to form a reacted sublayer of said strap, whereby said reacted sublayer lowers contact resistance between said conducting strap and said first and second regions, and lowers the sheet resistance of said conducting strap between said first and second regions.
Claim 2
Dependent Claim
14 words
The method of Claim 1 wherein step (g) is performed chronologically after step (f).
Claim 3
Dependent Claim
12 words
The method of Claim 1 wherein said substrate substantially comprises monocrystalline silicon.
Claim 4
Dependent Claim
12 words
The method of Claim 1 wherein said insulating layer substantially comprises oxide.
Claim 5
Dependent Claim
12 words
The method of Claim 1 wherein said substrate-reactive material substantially comprises titanium.
Claim 6
Dependent Claim
15 words
The method of Claim 1 wherein said layer of semiconductor material substantially comprises noncrystalline silicon.
Claim 7
Dependent Claim
23 words
The method of Claim 1 wherein said layer of substrate-reactive material is formed to a thickness in a range of about 100-300 angstroms.
Claim 8
Dependent Claim
23 words
The method of Claim 1 wherein said layer of semiconductor material is formed to a thickness in a range of about 500-2,500 angstroms.
Claim 9
Dependent Claim
98 words
A microelectronic device, said device incorporating low-resistivity straps between regions, comprising: a substrate having a first region and a second region; an insulating layer selectively formed over said substrate said insulating layer not covering at least predetermined portions of said first and second regions; a conducting strap formed so as to make contact with said first and second regions, said conducting strap including a reacted sublayer, whereby said reacted sublayer lowers contact resistance between said conducting strap and said first and second regions, and lowers the sheet resistance of said conducting strap between said first and second regions.
Claim 10
Dependent Claim
16 words
The microelectronic device of Claim 9 wherein said first and second regions substantially include titanium silicide.
Claim 11
Dependent Claim
13 words
The microelectronic device of Claim 9 wherein said substrate substantially comprises monocrystalline silicon.
Claim 12
Dependent Claim
13 words
The microelectronic device of Claim 9 wherein said insulating layer substantially comprises oxide.
Claim 13
Dependent Claim
14 words
The microelectronic device of Claim 9 wherein said reacted sublayer substantially comprises titanium silicide.
References Cited (Backward Citations)
No citation records indexed.
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