EP0499273A2
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EP
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Congruent state changeable optical memory material and device
Assignee: Energy Conversion Devices Inc
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Filing: 1992-02-14
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Granted: —
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Expires: 2012-02-14
Abstract
Abstract A state changeable memory alloy and device employing same. The memory alloy is capable of changing from a first state to a second state in response to the input of energy, such as projected optical beam energy, electrical energy or thermal energy. The alloy has a first detectable characteristic when in the first state and a second detectable characteristic when in the second state. It is further characterized in that the first state comprises a single phase, and the second state comprises either: (1) a single phase having the same composition as the first phase or (2) a plurality of phases which have substantially similar crystallization temperatures and kinetics.
Inventors
- 👤 David A. Strand
- 👤 Stanford R. Ovshinsky
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 19:43
CPC Classifications
G; G11; G11B; G11B7/00; G11B7/24; G11B7/26; G11C; G11C13/00; G11C13/04; G11B7/004; G11B7/0055; G11B7/00557; G11B7/241; G11B7/242; G11B7/243; G11C13/047; G11C7/00; G11C7/005; G11B2007/24302; G11B2007/24312; G11B2007/24314; G11B2007/24316
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
114 words
A state changeable memory alloy changeable from a first state to a second state in response to the input of energy, said alloy having a first detectable characteristic when in said first state and a second detectable characteristic when in said second state, and said first and second detectable characteristics selected from the group consisting of reflectivity, band gap, electrical resistance, optical absorption, magnetic susceptibility and thermal conductivity; and said alloy further characterized in that the first state comprises a single phase and said second state comprises either (1) a single phase having the same composition as said first state or (2) a plurality of phases which have substantially similar crystallization temperatures and kinetics.
Claim 2
Dependent Claim
11 words
An alloy as in claim 1, which comprises a chalcogenide material.
Claim 3
Dependent Claim
12 words
An alloy as in claim 1, which comprises at least three elements.
Claim 4
Dependent Claim
12 words
An alloy as in claim 1 which comprises Te, Ge and Sb.
Claim 5
Dependent Claim
27 words
An alloy as in claim 1 which is capable of changing from said first state to said second state in response to the input of optical energy.
Claim 6
Dependent Claim
27 words
An alloy as in claim 1, which is capable of changing from said first state to said second state in response to the input of electrical energy.
Claim 7
Dependent Claim
27 words
An alloy as in claim 1, which is capable of changing from said first state to said second state in response to the input of thermal energy.
Claim 8
Dependent Claim
22 words
An alloy as in claim 1, wherein said first state is an amorphous state and said second state is a crystalline state.
Claim 9
Dependent Claim
166 words
An alloy as in claim 1, which further includes a substrate, a dielectric first encapsulating layer on the substrate, a memory layer on the dielectric first encapsulating layer, and a dielectric second encapsulating layer atop the memory layer, the improvement wherein the memory layer is a non-ablative, congruent state change memory layer capable of existing in at least an amorphous state and a crystalline state and formed of a material having the composition: Te a Ge b Sb c a,b and c being expressed in atomic percentages and selected such that, when said material is in the crystalline state, it is substantially entirely crystalline and includes a major portion which has the same composition as the material has when in the amorphous state and a minor portion which has the composition: Te d Ge e Sb f (d, e and f being expressed in atomic percentages) wherein the differences between a and d, b and e, and c and f, respectively, total no more than 16.
Claim 10
Dependent Claim
65 words
An alloy as in claim 1, said alloy having the general formula Te₅₀(GeX)₅₀ wherein X is Sb, Sn or Bi, said alloy further characterized in that the first state comprises a single phase and said second state comprises either (1) a single phase having the same composition as said first state or (2) a plurality of phases which have substantially similar crystallization temperatures and kinetics.
References Cited (Backward Citations)
No citation records indexed.
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