EP0499063A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Resin sealed semiconductor integrated circuit comprising a wiring layer
Assignee: NEC Electronics Corp
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Filing: 1992-01-22
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Granted: —
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Expires: 2012-01-22
Abstract
Abstract A wiring layer structure of a resin sealed semiconductor integrated circuit, which is free from slide of wiring layer during heat cycle test, is disclosed. The slide is prevented by making an effective width of the wiring layer smaller by means of slits (S) formed in the wiring layer (208A-1,208A-2,208A-3). A reduction of area to be occupied by the wiring layer is realized by reducing a total width of the wiring layers by increasing the density of slits with increase of a distance from a corner of the chip.
Inventors
- 👤 Shozo Nishimoto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 00:01
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/43; H10W20/427
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
100 words
A resin sealed semiconductor integrated circuit comprising: a square or rectangular semiconductor chip having an interlayer insulating film; a power source wiring or a ground wiring selectively attached to said interlayer insulating film and comprising a wiring layer having a total width non-continuously decreasing with increase of distance from a closest corner of said semiconductor chip and means for separating said wiring layer into a plurality of parallel wiring layer portions, the number of said parallel wiring layer portions being dependent upon said distance; and a passivation film covering said interlayer insulating film on which said wiring layer is provided.
Claim 2
Dependent Claim
26 words
The semiconductor integrated circuit claimed in claim 1, wherein said separating means is alits each having width at least twice the thickness of said passivation film.
Claim 3
Dependent Claim
22 words
The semiconductor integrated circuit claimed in claim 1, wherein said passivation film is a silicon oxynitride film or a silicon nitride film.
References Cited (Backward Citations)
No citation records indexed.
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