Field emission device with vertically integrated active control

Claim 2

The controlled cold-cathode field-induced electron emission device of claim 1 further comprising: a plurality of conductive lines disposed on part of the first major surface of the supporting substrate, wherein at least some of the plurality of conductive lines are operably coupled to the control means.

Claim 3

The controlled cold-cathode field-induced electron emission device of claim 1 or 2 further comprising: a plurality of conductive lines, at least some of which are disposed substantially in the supporting substrate and at least some of which are operably coupled to the control means.

Claim 4

The controlled cold-cathode field-induced electron emission device of claim 1, 2 or 3 further comprising: a plurality of conductive lines substantially disposed on at least part of the second surface of the first insulator layer, wherein at least some of the plurality of conductive lines are operably coupled to the at least first conductive path.

Claim 5

The controlled cold-cathode field-induced electron emission device of claim 1, 2, 3 or 4 further comprising: at least a first conductive line disposed substantially on at least part of the second surface of the first insulator layer, wherein the at least first conductive line is operably coupled to the at least first conductive path, and at least a second conductive line disposed substantially on at least part of the first major surface of the supporting substrate, wherein the at least second conductive line is operably coupled to the control means.

Claim 6

The controlled cold-cathode field-induced electron emission device of any preceding claim further comprising: a first non-insulator layer (106) substantially disposed on at least part of the at least second surface of the first insulator layer and operably coupled to at least the first conductive path.

Claim 7

The controlled cold-cathode field-induced electron emission device of claim 6 further comprising: a second insulator layer (108) comprised of at least a third and a fourth surface, the second insulator layer having an aperture substantially transversely disposed through the second insulator layer,wherein at least the third surface of the second insulator layer is at least partially disposed on the first non-insulator layer and is positioned such that the electron emitter is symmetrically disposed with in the aperture; and a gate electrode (110) comprised of a second non-insulator layer substantially disposed on at least part of the second surface of the second insulator layer.

Claim 8

The controlled cold-cathode field-induced electron emission device of any preceding claim further comprising: a plurality of electron emitters, each of which is at least partially disposed on the second surface of the first insulator layer, wherein at least a first of the plurality of electron emitters is operably coupled to the at least first conductive path.

Claim 9

An electron emission device, wherein the electron emission device comprises an array of controlled cold-cathode field-induced electron emission devices (FEDs), the array characterized by at least: A) a supporting substrate (101) with at least a first major surface; B) control means substantially disposed in the supporting substrate; C) a plurality of conductive lines (103), at least some of which are operably coupled to the control means and are disposed on part of the first major surface of the supporting substrate; D) a first insulator layer (104) comprised of at least a first and a second surface, wherein at least part of the first surface of the first insulator layer is disposed on at least part of the first major surface of the supporting substrate, the first insulator layer having at least a first conductive path that is operably coupled to at least a first conductive line of the plurality of conductive lines and is disposed transversely through the first insulator layer; E) a non-insulator layer (106) substantially disposed on at least part of the second surface of the first insulator layer and operably coupled to at least the first conductive path; F) a plurality of electron emitters, for emitting electrons, each at least partially disposed on the non-insulator layer; G) a second insulator layer (108) comprised of at least a third and a fourth surface, the second insulator layer having a plurality of apertures substantially transversely disposed through the second insulator layer, wherein the first surface of the second insulator layer is at least partially disposed on the non-insulator layer and is positioned such that at least some of the plurality of electron emitters are substantially symmetrically disposed within at least some of the plurality of apertures; and H) a gate electrode (110) comprised of a second conductive layer, substantially disposed on at least part of the second surface of the second insulator layer.

Claim 10

The controlled cold-cathode field-induced electron emission device of claim 1, 2, 3, 4, 5, 6, 7 or claim 8 or the electron emission device of claim 9 wherein the control means comprises a current source and/or a voltage source.