EP0490776A2
Expired / Lapsed
EP
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A thin film of superconductor and a process for preparing the same
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1991-12-13
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Granted: —
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Expires: 2011-12-13
Abstract
Abstract A thin film of oxide superconductor deposited on a single crustal substrate of silicon wefer. A buffer layer of (100) or (110) oriented Ln₂O₃, in which Ln stands for Y or lanthanide elements is interposed between the thin film of oxide superconductor and the silicon wafer. A surface of silicon wafer is preferably cleaned satisfactorily by heat-treatment in vacuum before the buffer layer is deposited. An under-layer of metal oxide ; ZrO₂, YSZ or metal Y, Er is preferably interposed between the Ln₂O₃ buffer layer and the silicon wafer.
Inventors
- 👤 Keizo Harada
- 👤 Hidenori Nakanishi
- 👤 Hideo Itozaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 03:49
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0576; H10N60/0632; Y; Y10; Y10S; Y10S428/00; Y10S428/922; Y10S428/9265; Y10S428/93; Y10S505/00; Y10S505/70; Y10S505/701
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
47 words
A thin film of oxide superconductor deposited on a single crystal substrate of silicon wafer, characterized by a buffer layer of (100) or (110) oriented Ln₂O₃, in which Ln stands for Y or lanthanide elements interposed between said thin film of oxide superconductor and said silicon wafer.
Claim 2
Dependent Claim
27 words
The thin film set forth in claim 1, wherein said thin film of oxide superconductor is directly deposited on and contacted with said buffer layer of Ln₂O₃.
Claim 3
Dependent Claim
28 words
The thin film set forth in claim 1, wherein an under-layer as an additional buffer layer is interposed between said buffer layer of Ln₂O₃ and said silicon wafer.
Claim 4
Dependent Claim
20 words
The thin film set forth in claim 3, wherein said under-layer is a layer made of metal oxide or metal.
Claim 5
Dependent Claim
19 words
The thin film set forth in claim 4, wherein said metal oxide is ZrO₂ or yttrium stabilized zirconia (YSZ).
Claim 6
Dependent Claim
21 words
The thin film set forth in claim 4, wherein said metal is selected from the group comprising Y and lanthanide elements.
Claim 7
Dependent Claim
58 words
A process for preparing a thin film of oxide superconductor on a single crystal substrate of silicon wafer, comprising by the steps of depositing a buffer layer of (100) or (110) oriented Ln₂O₃, in which Ln stands for Y or lanthanide elements on said silicon wafer, and then depositing said film of oxide superconductor on said buffer layer.
Claim 8
Dependent Claim
29 words
The process set forth in claim 7, wherein a surface of said silicon wafer is cleaned satisfactorily before said buffer layer of (100) or (110) oriented Ln₂O₃ is deposited.
Claim 9
Dependent Claim
22 words
The process set forth in claim 8, wherein the cleaning of said surface of silicon wafer is effected by heat-treatment in vacuum.
Claim 10
Dependent Claim
30 words
The process set forth in claim 9, wherein said heat-treatment is effected under a pressure of lower than 1 x 10⁻⁶ Torr and at a temperature of above 900 °C.
Claim 11
Dependent Claim
36 words
The process set forth in any one of claim 7 to 10, wherein an under-layer as additional buffer layer is deposited on said silicon wafer and said buffer layer of Ln₂O₃ is deposited on said under-layer.
Claim 12
Dependent Claim
19 words
The process set forth in claim 11, wherein said under-layer is a layer made of metal oxide or metal.
Claim 13
Dependent Claim
19 words
The thin film set forth in claim 12, wherein said metal oxide is ZrO₂ or yttrium stabilized zirconia (YSZ).
Claim 14
Dependent Claim
21 words
The thin film set forth in claim 12, wherein said metal is selected from the group comprising Y and lanthanide elements.
Claim 15
Dependent Claim
27 words
The thin film set forth in any one of claim 7 to 14, wherein said buffer of Ln₂O₃ and said under-layer are prepared by vacuum deposition method.
Claim 16
Dependent Claim
26 words
The thin film set forth in any one of claim 7 to 15 , wherein said thin film of oxide superconductor is prepared by sputtering method.
Claim 17
Dependent Claim
39 words
The thin film set forth in any one of claim 7 to 16, wherein deposition of said buffer layer of Ln₂O₃ and said under-layer and said thin film oxide superconductor is carried out in a same vacuum chamber successively.
References Cited (Backward Citations)
No citation records indexed.
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