EP0488393A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method for treating substrates
Assignee: Tokyo Electron Ltd
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Filing: 1991-11-29
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Granted: —
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Expires: 2011-11-29
Abstract
Abstract A substrates treating apparatus comprising a chamber (14) provided with a section (24) at which a semiconductor wafer (2) is treated and with another section (25) at which plasma is generated, means (32a, 32b, 33a, 33b) for supplying mixed gas (O₂ + CF₄) into the plasma generating section (25) in the chamber (14), high frequency electrodes (28a, 28b) for changing the gas into plasma, an ion trap (38) for trapping ions in the plasma to send neutral radicals into the wafer treating section (24), and means (34) for exhausting the wafer treating section (24).
Inventors
- 👤 Yutaka Amemiya
- 👤 Akihito Toda
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 10:42
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/32091; H10; H10P; H10P50/00; H01J37/32357; H01J37/32431; H01J37/32623; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/334; H01J2237/3343; H01J2237/3345; H01J2237/3348
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
110 words
A substrates treating apparatus comprising a chamber (14) provided with a section (24) at which the substrate (2) is treated and with another section (25) at which plasma is generated; gas supplying means (32a, 32b, 33a, 33b) for supplying gas into the plasma generating section (25); electrode means (28a, 28b, 29, 30) for changing the gas into plasma in the plasma generating section (25); ion trap means (38) arranged between the plasma generating section (25) and the substrate treating section (24) to trap ions in the plasma so as to send neutral radicals into the substrate treating section (24); and exhausting means (34) for exhausting the substrate treating section (24).
Claim 2
Dependent Claim
29 words
The substrates treating apparatus according to claim 1, characterized in that the diameter of the plasma generating section (25) is smaller than that of the substrate treating section (24).
Claim 3
Dependent Claim
24 words
The substrates treating apparatus according to claim 1, characterized in that the plasma generating section (25) is located above the substrate treating section (24).
Claim 4
Dependent Claim
27 words
The substrates treating apparatus according to claim 1, characterized in that the substrate in the substrate treating section (24) is opposed to the ion trap means (38).
Claim 5
Dependent Claim
35 words
The substrates treating apparatus according to claim 4, characterized by further comprising interval changing means (22) for changing the interval between the substrate in the substrate treating section (24) and the ion trap means (38).
Claim 6
Dependent Claim
43 words
The substrates treating apparatus according to claim 1, characterized in that the electrode means (28a, 28b, 29, 30) includes a first electrode (28a) connected to a high frequency power source, and a second electrode (28b) insulated from the first electrode (28a) and grounded.
Claim 7
Dependent Claim
22 words
The substrates treating apparatus according to claim 1, characterized in that the ion trap means (38) has a porous metal plate grounded.
Claim 8
Dependent Claim
21 words
The substrates treating apparatus according to claim 1, characterized in that the gas is a mixed one including oxygen and fluorine.
Claim 9
Dependent Claim
25 words
The substrates treating apparatus according to claim 1, characterized by further comprising a means (23) for heating the substrate in the substrate treating section (24).
Claim 10
Dependent Claim
79 words
A substrates treating method comprising preparing a substrate (2) in a substrate treating section (24) of a chamber (14); introducing gas into a plasma generating section (25) in the chamber; changing the gas into plasma in the plasma generating section (25); taking out neutral radicals from the plasma; and acting the neutral radicals on the substrate (2) in the substrate treating section (24) whereby carrying out isotropic etching and ashing relative to the substrate (2) at the same time.
Claim 11
Dependent Claim
39 words
The substrates treating method according to claim 10, characterized in that at least one of the flow rate, pressure and components of the gas is controlled to control a ratio of the ashing rate and the isotropic etching rate.
Claim 12
Dependent Claim
31 words
The substrates treating method according to claim 10, characterized in that the amount of plasma generated is adjusted to control a ratio of the ashing rate and the isotropic etching rate.
Claim 13
Dependent Claim
45 words
The substrates treating method according to claim 10, characterized in that the interval between the means (38) for taking out the neutral radicals from the plasma and the substrate (2) is adjusted to control a ratio of the ashing rate and the isotropic etching rate.
Claim 14
Dependent Claim
29 words
The substrates treating method according to claim 10, characterized in that the ashing rate is controlled to be range of 200 - 500 times of the isotropic etching rate.
Claim 15
Dependent Claim
23 words
The substrates treating method according to claim 10, characterized by further comprising the step of heating the substrate during to generate the plasma.
Claim 16
Dependent Claim
21 words
The substrates treating method according to claim 10, characterized in that the gas is a mixed one including oxygen and fluorine.
References Cited (Backward Citations)
No citation records indexed.
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