EP0488352A2
Expired / Lapsed
EP
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Semiconductor gas sensor
Assignee: Mitsui Mining Co Ltd
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Filing: 1991-11-29
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Granted: —
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Expires: 2011-11-29
Abstract
Abstract The invention provides a semiconductor gas sensor with a desired number of electrodes formed on a surface of a semiconductor. A diamond semiconductor is used as the semiconductor. <IMAGE>
Inventors
- 👤 Isamu c/o Mitsui Mining Co. Ltd. Yashima
- 👤 Nobuyuki c/o Mitsui Mining Co. Ltd. Kitahara
- 👤 Masayuki c/o Mitsui Mining Co. Ltd. Notoya
- 👤 Hiroshi c/o Mitsui Mining Co. Ltd. Sato
- 👤 Katsunobu c/o Mitsui Mining Co. Ltd. Tatsumoto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 19:30
CPC Classifications
G; G01; G01N; G01N27/00; G01N27/02; G01N27/04; G01N27/12; G01N27/125
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
27 words
In a semiconductor gas sensor with a certain number of electrodes formed on a surface of a semiconductor, the improvement wherein said semiconductor is a diamond semiconductor.
Claim 2
Dependent Claim
27 words
In a semiconductor gas sensor with a certain number of electrodes formed on a surface of a semiconductor, the improvement wherein said semiconductor is a diamond semiconductor.
Claim 3
Dependent Claim
18 words
The sensor of claim 1, wherein the diamond semiconductor is a thin diamond layer formed by vaporphase epitaxy.
Claim 4
Dependent Claim
21 words
The sensor of claim 1, wherein said diamond semiconductor is a monocrystalline or polycrystalline diamond semiconductor free of double-bonded carbon substance.
Claim 5
Dependent Claim
21 words
The sensor of claim 3, wherein said diamond semiconductor has been rendered free of double-bonded carbon substance by hydrogen plasma etching.
Claim 6
Dependent Claim
21 words
The sensor of claim 2, wherein said diamond semiconductor is a monocrystalline or polycrystalline diamond semiconductor free of double-bonded carbon substance.
Claim 7
Dependent Claim
21 words
The sensor of claim 5, wherein said diamond semiconductor has been rendered free of double-bonded carbon substance by hydrogen plasma etching.
Claim 8
Dependent Claim
16 words
The sensor of any one of claims 1-6, wherein said diamond semiconductor has a porous surface.
Claim 9
Dependent Claim
79 words
The sensor of claim 1 or 2, wherein said electrodes are made of a metal selected from a first metal group consisting of Pt, Pd, lr, Ru, Eh, Re, Ag, Os and Au, an alloy of at least two metals selected from the first metal group or an alloy of at least one metal selected from the first metal group and at least one metal selected from a second metal group consisting of Cu, P, Co, Ni and Ce.
Claim 10
Dependent Claim
90 words
The sensor of claim 3 or 5, wherein said electrodes are made of a metal selected from a first metal group consisting of Pt, Pd, lr, Ru, Rh, Re, Ag, Os and Au, an alloy of at least two metals selected from the first metal group or an alloy of at least one metal selected from the first metal group and at least one metal selected from a second metal group consisting of Cu, P, Co, Ni and Ce; and said sensor has an ohmic characteristic as an electrical characteristic.
References Cited (Backward Citations)
No citation records indexed.
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