Patent US4995057A successfully refreshed from Google Patents.
EP0484965A2
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Active matrix substrate
Assignee: Seiko Epson Corp
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Filing: 1991-11-08
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Granted: —
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Expires: 2011-11-08
Abstract
Abstract There is disclosed an active matrix substrate including on a given substrate (109) a thin film transistor, a scanning line (101) connected to the gate of the thin film transistor, a data bus (108) connected to the source of the thin film transistor, and a picture element electrode (107) connected to the data bus (108) through the thin film transistor, the active matrix substrate comprising a structure of the scanning line (101) having the surface covered with an insulating film (112). A semiconductor layer (102) covered with a gate insulating film (111) constituting the thin film transistor, and a gate electrode (103) constituting the thin film transistor, which are laid on each other in the stated order.
Inventors
- 👤 Takashi c/o SEIKO EPSON CORPORATION Nakazawa
- 👤 Ishiguro c/o SEIKO EPSON CORPORATION Hideto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 21:01
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; H; H10; H10D; H10D86/00; G02F1/136213; G02F2202/00; G02F2202/10; G02F2202/104
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
103 words
An active matrix substrate including on a given substrate a thin film transistor, a scanning line connected to the gate of the thin film transistor, a data bus connected to the source of the thin film transistor, and a pixel electrode connected to the data bus through the thin film transistor, the active matrix substrate comprising a structure of the scanning line having the surface covered with an insulating film, a semiconductor layer covered with a gate insulating film constituting the thin film transistor, and a gate electrode constituting the thin film transistor, which are laid on each other in the stated order.
Claim 2
Dependent Claim
37 words
An active matrix substrate according to claim 1, wherein an insulating film is formed on said insulating film covering the surface of the scanning line at the same time of the formation of the gate insulating film.
Claim 3
Dependent Claim
29 words
An active matrix substrate according to claim 1, wherein the scanning line having the surface covered with the insulating film is formed of tantalum line having the surface oxidized.
Claim 4
Dependent Claim
21 words
An active matrix substrate according to claim 1, wherein said gate insulating film is a layer formed by depositing silicon dioxide.
Claim 5
Dependent Claim
25 words
An active matrix substrate according to claim 1, wherein there is provided a pad at an intersection between the scanning line and said data line.
Claim 6
Dependent Claim
38 words
An active matrix substrate according to claim 1, wherein a holding capacity line is disposed parallel with said scanning line, and there is provided a pad at an intersection between said holding capacity line and said data bus.
Claim 7
Dependent Claim
38 words
An active matrix substrate according to claim 1, wherein a holding capacity line is disposed parallel with said scanning line, and there is provided a pad at an overlap between said pixel electrode and said holding capacity line.
Claim 8
Dependent Claim
25 words
An active matrix substrate according to claim 1, wherein there is provided a pad at an overlap between said scanning line and said pixel electrode.
Claim 9
Dependent Claim
35 words
An active matrix substrate according to claim 1, wherein a two-layer structure of a tantalum oxide layer and a silicon dioxide layer is interposed at the intersection between said scanning line and said data bus.
Claim 10
Dependent Claim
35 words
An active matrix substrate according to claim 1, wherein a two-layer structure of a tantalum oxide layer and a silicon dioxide layer is interposed at the overlap between said scanning line and said pixel electrode.
Claim 11
Dependent Claim
19 words
An active matrix substrate according to claim 1, wherein said gate electrode and said pixel electrode are concurrently formed.
Claim 12
Dependent Claim
18 words
An active matrix substrate according to claim 1, wherein said given substrate is made of glass or ceramics.
Claim 13
Dependent Claim
30 words
An active matrix substrate according to claim 1, wherein said given substrate is made of ceramics, or a silicon plate having with a protective insulating film deposited on the surface.
Claim 14
Dependent Claim
27 words
An active matrix substate according to any one of claims 5,6,7 or 8, wherein said pad includes a layer of the same material as said gate electrode.
Claim 15
Dependent Claim
32 words
An active matrix substate according to any one of claims 5,6,7 or 8, wherein said pad includes a layer of the same material as said semiconductor layer constituting the thin film transistor.
Claim 16
Dependent Claim
38 words
An active matrix substrate according to claim 5, wherein said pad includes a layer of the same material as said gate electrode, and a layer of the same material as said semiconductor layer constituting the thin film transistor.
Claim 17
Dependent Claim
47 words
An active matrix substrate according to anye one of claims 6,7 or 8 wherein said pad includes a two-layer structure of a layer of the same material as said gate electrode, and a layer of the same material as said semiconductor layer constituting the thin film transistor.
Claim 18
Dependent Claim
52 words
An active matrix substrate comprising on a given substrate a thin film transistor, a scanning line capacity-coupled to the gate electrode of the thin film transistor, a data bus connected to the source of the thin film transistor, and a pixel electrode connected to the data bus through the thin film transistor.
Claim 19
Dependent Claim
41 words
An active matrix substrate according to claim 18, wherein a MOS capacity C tft of the thin film transistor, and a coupling capacity C cup constituted by said scanning line and said gate electrode satisfy C cup > C tft .
Claim 20
Dependent Claim
53 words
An active matrix substrate according to claim 18, wherein an insulation resistance R tft of a MOS capacity C tft of the thin film transistor, and an insulation resistance R cup of a coupling capacity R cup constituted by said scanning line and said gate electrode satisfy R tft > R cup .
Claim 21
Dependent Claim
68 words
An active matrix substrate according to claim 18, wherein a total capacity of said data bus combining capacities constituted by said data bus together with a common electrode, said scanning line and said pixel electrode, and a MOS capacity C tft of the thin film transistor, and a coupling capacity C cup constituted by said scanning line and said gate electrode satisfy C data > C cup .
Claim 22
Dependent Claim
18 words
An active matrix substrate according to claim 18, wherein said given substrate is made of glass or ceramics.
Claim 23
Dependent Claim
30 words
An active matrix substrate according to claim 18, wherein said given substrate is made of glass, ceramics, or a silicon plate with a protective insulating film deposited on the surface.
Claim 24
Dependent Claim
42 words
An active matrix substrate according to claim 18, wherein said scanning line is formed of a tantalum line with a tantalum oxide layer formed on the surface, and said gate electrode is connected to said tantalum line through said tantalum oxide layer.
Claim 25
Dependent Claim
46 words
An active matrix substrate according to claim 24, wherein said tantalum oxide layer, and an insulating film formed at the same time of forming a gate insulating film of the thin film transistor are superposed at an intersection between said scanning line and said data bus.
References Cited (Backward Citations)
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