EP0484887A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Laser diode device having a protective layer on its light-emitting end face
Assignee: Fuji Electric Co Ltd
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Filing: 1991-11-05
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Granted: —
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Expires: 2011-11-05
Abstract
Abstract A laser diode in which a laser diode chip (111) having a light-emitting end face (33) is resin-encapsulated by means of an encapsulating resin layer (10) constituted by an epoxy-based resin or the like. An end-face-breakage preventing layer (10) formed of a silicon-based resin having a high coefficient of light absorption in the wavelength band of a laser beam and a high bond energy is formed on the light-emitting end face (33). The end-face-breakage preventing layer (10) has a thickness of approximately 20 to 30 µm.
Inventors
- 👤 Akira C/O Fuji Electric Co. Ltd. Amano
- 👤 Yoichi C/O Fuji Electric Co. Ltd. Shindo
- 👤 Nobutaka c/o Fuji Electric Co. Ltd. Suganuma
- 👤 Katsue c/o Fuji Electric Co. Ltd. Nakata
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 18:47
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/84; G; G11; G11B; G11B7/00; G11B7/12; G11B7/123; G11B7/125; G11B7/127; G11B7/22; H01; H01S; H01S5/00; H01S5/02; H01S5/022; H01S5/023; H01S5/0232; G11B7/08; G11B7/09; G11B7/0908; H01S5/02208; H01S5/02212; H01S5/02218; H01S5/02234; H01S5/028; H01S5/0282; H01S5/0283; H10W; H10W72/00; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W90/00; H10W90/701; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
82 words
A laser diode device comprising: a laser diode chip encapsulated with a resin, the laser diode chip having at least one light-emitting end face; and an end-face-breakage preventing layer made of an organic resin and disposed on the light-emitting end face, the end-face breakage preventing layer having a thickness of at least 5 µm, and the organic resin having a low coefficient of light absorption in a wavelength region of the laser diode and a dissociation energy of at least 90 kcal/mol.
Claim 2
Dependent Claim
28 words
A laser diode device according to Claim 1, wherein the end-face-breakage preventing layer is made of an organic resin selected from a silicon-based resin and an acrylic resin.
Claim 3
Dependent Claim
18 words
A laser diode device according to Claim 2, wherein the silicon-based resin has dimethylpolysiloxane as its principal component.
Claim 4
Dependent Claim
16 words
A laser diode device according to Claim 2, wherein the acrylic resin is polymethyl methacrylate resin.
Claim 5
Dependent Claim
68 words
A laser diode device comprising: a laser diode chip encapsulated with a resin, the laser diode chip having at least one light-emitting end face; and an end-face-breakage preventing layer disposed on the light-emitting end face, the end-face-breakage preventing layer having a thickness of at least 5 µm and being made of inorganic materials having a low coefficient of light absorption in a wavelength region of the laser diode.
Claim 6
Dependent Claim
28 words
A laser diode device according to Claim 5, wherein a principal component of the end-face-breakage preventing layer is an oxide selected from aluminum oxide and a silicon oxide.
Claim 7
Dependent Claim
21 words
A laser diode device according to Claim 5, wherein a principal component of the end-face-breakage preventing layer is a low-melting glass.
Claim 8
Dependent Claim
26 words
A laser diode device according to Claim 1, wherein the thickness of the end-face-breakage preventing layer is in the range of approximately 20 to 30 µm.
Claim 9
Dependent Claim
26 words
A laser diode device according to Claim 2, wherein the thickness of the end-face-breakage preventing layer is in the range of approximately 20 to 30 µm.
Claim 10
Dependent Claim
26 words
A laser diode device according to Claim 3, wherein the thickness of the end-face-breakage preventing layer is in the range of approximately 20 to 30 µm.
Claim 11
Dependent Claim
26 words
A laser diode device according to Claim 4, wherein the thickness of the end-face-breakage preventing layer is in the range of approximately 20 to 30 µm.
Claim 12
Dependent Claim
26 words
A laser diode device according to Claim 5, wherein the thickness of the end-face-breakage preventing layer is in the range of approximately 20 to 30 µm.
Claim 13
Dependent Claim
26 words
A laser diode device according to Claim 6, wherein the thickness of the end-face-breakage preventing layer is in the range of approximately 20 to 30 µm.
Claim 14
Dependent Claim
26 words
A laser diode device according to Claim 7, wherein the thickness of the end-face-breakage preventing layer is in the range of approximately 20 to 30 µm.
References Cited (Backward Citations)
No citation records indexed.
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