EP0483783A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Fabrication method and structure of a thin film electroluminescent device
Assignee: LG Electronics Inc
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Filing: 1991-10-30
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Granted: —
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Expires: 2011-10-30
Abstract
Abstract Disclosed is a thin film electroluminescent device of this invention comprising a transparent substrate (11), a transparent electrode (12), a fluorescent layer (14) emitting a light when being charged with a certain voltage, a first and second insulating layer (13,15) being laminated on the top and the bottom of the fluorescent layer (14) to make a dopant be excited and emit a light efficiently, a first light absorbing layer (17) being laminated on the second insulating layer (15) to improve the function of contrast of the device of electroluminescence, a rear electrode (16) formed on the first light absorbing layer (17) at regular intervals, a rear insulating layer (18) being laminated on the rear electrode (16) to prevent the current from leaking from the rear electrode, and a second light absorbing layer (19) being laminated on the rear insulating layer (18) to blacken the etched portion of the first light absorbing layer (17).
Inventors
- 👤 Ryu Jae-Hwa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-27 12:16
CPC Classifications
H; H05; H05B; H05B33/00; H05B33/12; H05B33/14; H05B33/145; H05B33/10; H05B33/22; H05B33/26; Y; Y10; Y10S; Y10S428/00; Y10S428/917
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
132 words
A method for fabricating a thin film electroluminescent device comprising the steps of: a) laminating a transparent electrode on a transparent substrate; b) laminating a first insulating layer on said transparent electrode layer; c) laminating a fluorescent layer on said first insulating layer to emit a light; d) laminating a second insulating layer on said fluorescent layer; e) laminating a SiNx layer on said second insulating layer to form a first light absorbing layer; f) forming a rear electrode on said first light absorbing layer; g) laminating a rear insulating layer on said rear electrode after etching said rear electrode layer by wet method and said first light absorbing layer by a ionic reaction method at regular intervals respectively; and h) laminating a second light absorbing layer on said rear insulating layer.
Claim 2
Dependent Claim
31 words
A fabricating method of a thin film electroluminescent device as claimed in Claim 1, wherein said first light absorbing layer consists of SiNx and the value of 'x' is within 0.1-0.5.
Claim 3
Dependent Claim
23 words
A method for fabricating a thin film electroluminescent device as claimed in Claim 1, wherein said second light absorbing layer consists of carbon.
Claim 4
Dependent Claim
46 words
A method for fabricating a thin film electroluminescent device as claimed in Claim 1, wherein said first insulating layer consists of a Si3N4 film with a thickness of 200 nm formed by RF magnetron reactive sputtering method using Silicon target in a N2 gas reaction furnace.
Claim 5
Dependent Claim
43 words
A method for fabricating a thin film electroluminescent device as claimed in Claim 1, wherein a fluorescent layer being made from zinc sulphate pellet (ZnS) doped with 1 mol % manganese and having heat treatment in 450 C vacuum space for one hour.
Claim 6
Dependent Claim
62 words
A method for fabricating a thin film electroluminescent device as claimed in Claim 1, wherein the step of reactive ion etching for forming said rear insulating layer is performed in the mixture of CF4 and O2 gases having the ratio of four to one with 100 W radio frequency power at the pressure of 50 mm Torr for two and half minutes.
Claim 7
Dependent Claim
151 words
A structure of a thin film electroluminescent device, comprising: a) a substrate; b) a transparent electrode formed on said substrate (11); c) a fluorescent layer for emitting a light when being charged; d) a first and a second insulating layers respectively formed on the bottom and the top of said fluorescent layer so as to effectively excite the dopants in said fluorescent layer and make them emit a light; e) a first light absorbing layer formed on said second insulating layer to improve the effect of contrast by preventing a light reflected from a rear electrode; f) a rear electrode formed on said first light absorbing layer at regular intervals; g) a rear insulating layer formed on said rear electrode to prevent the current leaking; and h) a second light absorbing layer formed on said rear insulating layer for preventing blackening of the etched portion of said first light absorbing layer.
Claim 8
Dependent Claim
30 words
A structure of a thin film electroluminescent device as claimed in Claim 7, wherein said first light absorbing layer consists of SiNx and the value of 'x' is within 0.1-0.5.
Claim 9
Dependent Claim
33 words
A structure of a thin film electroluminescent device as claimed in Claim 7, wherein the material of said rear insulating layer is the same kind of the material of said second insulating layer.
Claim 10
Dependent Claim
22 words
A structure of a thin film electroluminescent device as claimed in Claim 7, wherein a second light absorbing layer consists of carbon.
Claim 11
Dependent Claim
27 words
A structure of a thin film electroluminescent device as claimed in Claim 7 or 8, wherein said first light absorbing layer has the thickness of 100-200 nm.
Claim 12
Dependent Claim
32 words
A structure of a thin film electroluminescent device as claimed in Claim 7, 8 or 11, wherein said first light absorbing layer is etched at the same size of said rear electrode.
References Cited (Backward Citations)
No citation records indexed.
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