EP0481734A2
Expired / Lapsed
EP
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Light valve device
Assignee: Seiko Instruments Inc
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Filing: 1991-10-15
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Granted: —
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Expires: 2011-10-15
Abstract
Abstract The invention provides a semiconductor device for use in a light valve device, and a processor fabricating the same. The semiconductor device comprises a support substrate (1), a semiconductor thin film (5,6,7) on the support substrate, a switching transistor (4) having a channel region (7) formed in the semiconductor thin film and a main gate electrode (9) for controlling the channel region, and an electrode (3) electrically connected to the switching transistor for energisation by the switching transistor. A light-shielding thin film (11) is disposed on the side of the channel region opposite the main gate electrode, being separated from the channel region by an insulating film (10). In the process for fabricating the said conductor device, the light-shielding thin film, the insulating film and the semi-conductor thin film are laminated on the support substrate and are selectively etched to form a desired light-shielding thin film pattern. Then, the switching transistor and the electrode are formed subsequently.
Inventors
- 👤 Yutaka C/O Agency Of Industrial Science Hayashi
- 👤 Masaaki C/O Seiko Instruments Inc. Kamiya
- 👤 Yoshikazu C/O Seiko Instruments Inc. Kojima
- 👤 Hiroaki C/O Seiko Instruments Inc. Takasu
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 23:17
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/021; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; G02F1/136; G02F1/1362; G02F1/136209; G02F1/1368; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0321; H10D30/0323; H10D30/60; H10D30/67; H10D30/6704; H10D30/6723; H10D30/6729; H10D30/673; H10D30/6733; H10D30/6734; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6744; H10D86/03; H10D86/201; H10D86/40; H10D86/60; G02F1/1335; G02F1/133509; G02F1/133512; G02F1/13613; G02F2202/00; G02F2202/10; G02F2202/105; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S148/15; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
89 words
A semiconductor device for use in a light valve device, comprising a support substrate (1); a semiconductor thin film (23) on the support substrate; a switching transistor (4) having a channel region (7) formed in the semiconductor thin film and a main gate electrode (9) for controlling the channel region; and an electrode (3) electrically connected to the switching transistor for energisation by the switching transistor; characterised in that a leakage current inhibiting layer (11) is disposed on the side of the channel region opposite the main gate electrode.
Claim 2
Dependent Claim
22 words
A semiconductor device according to claim 1 characerised in that the leakage current inhibiting layer is made of an electrically conductive material.
Claim 3
Dependent Claim
22 words
A semiconductor device according to claim 1 or 2 characterised in that the leakage current inhibiting layer comprises a light-shielding thin film.
Claim 4
Dependent Claim
19 words
A semiconductor device according to claim 3 characterised in that the light shielding thin film is made of polysilicon.
Claim 5
Dependent Claim
28 words
A semiconductor device according to claim 3 characterised in that the light-shielding thin film is made of single crystal silicon that is hetero-epitaxially grown on the support substrate.
Claim 6
Dependent Claim
33 words
A semiconductor device according to claim 3 characterised in that the light-shielding thin film comprises a single layer film or a multi-layer film and includes at least one of germanium, silicon-germanium, and silicon.
Claim 7
Dependent Claim
41 words
A semiconductor device according to any of claims 3 to 6 claim characterised in that the light-shielding thin film is disposed between the support substrate and the channel region and is separated from the channel region by an insulating film (10).
Claim 8
Dependent Claim
23 words
A semiconductor device according to claim 7 characterised in that the insulating film includes at least one of silicon nitride and silicon oxide.
Claim 9
Dependent Claim
42 words
A semiconductor device according to any of claims 3 to 8 characterised in that the light-shielding thin film is disposed on a ground film (24) on the support substrate, and in that the ground film is made of oxynitride or silicon oxide.
Claim 10
Dependent Claim
22 words
A semiconductor device according to any preceding claim characterised in that the semiconductor thin film is a single crystal silicon thin film.
Claim 11
Independent Claim
88 words
A method of fabricating a semiconductor device characterised by the steps of forming a substrate (1,2) by laminating a light-shielding thin layer (21), an insulating film (22) and a semiconductor thin film (23) on a support substrate (1); forming a light-shielding layer pattern by selectively etching said laminated layers; forming a switching transistor (4) having a channel region (7) in said semiconductor thin film and a main gate electrode (9) covering said channel region; and forming an electrode (3) electrically connected to the switching element on said substrate.
Claim 12
Dependent Claim
136 words
A semiconductor device characterised by a composite substrate (1,2) having a stacked layer structure comprising a support substrate (1), a light-shielding thin film (11) provided on said support substrate, an insulating film (10) provided at least on said light-shielding thin film, and a semiconductor thin film (5,6,7) disposed on said insulating film; a transparent electrode (3) formed on a portion of said composite substrate where at least said light-shielding thin film is removed; and a switching element (4), connected electrically to said transparent electrode, consisting of a transistor including a channel region (7) formed in said semiconductor thin film and a main gate electrode (9) for controlling the conduction in said channel region, wherein the light-shielding thin film layer is disposed on the side opposite the said main gate electrode with respect to said channel region.
Claim 13
Dependent Claim
61 words
A composite substrate having a stacked layer structure characterised by a support substrate (1) made of a light-transmitting insulating layer, a light-shielding thin film (11) formed on said support substrate, an insulating film (10) formed at least over said light-shielding thin film, and a semiconductor thin film (23), which is made of single crystalline material, fixedly laminated on said insulating film.
Claim 14
Dependent Claim
105 words
A light valve device characterised by a composite substrate having stacked layers including a support substrate (1), a light-shielding thin film (11) formed on said support substrate, an insulating film (10) formed at least over said light-shielding thin film, a semi-conducting film (5,6,7) disposed on said insulating film, a pixel electrode (3) formed on said semiconductor film and a switching element (4) formed on said semiconductor film for energising said pixel electrode; an opposed substrate (29) opposite to said composite substrate at a predetermined gap; and an electro-optical material (30) filling up said gap for optically changing in accordance with energisation of said pixel electrode.
References Cited (Backward Citations)
No citation records indexed.
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