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EP0481093A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Delay circuit

Assignee: Toshiba Corp
•
Filing: 1991-05-01
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Granted: —
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Expires: 2011-05-01
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Abstract

Abstract A delay circuit wherein MOS transistors (21, 22) for resistors for controlling the delay time of a CMOS inverter (26) are inserted between the source of the CMOS inverter (26) and power supply potentials (GND, V dd ) respectively and the respective sources of the MOS transistors (21, 22) are connected with the power supply potentials (GND, V dd ) respectively. Therefore, by changing the drain currents of the MOS transistors (21, 22) the control voltages (V n , V p ) thereof are changed respectively. The driving capability of the CMOS inverter (26) is consequently changed, allowing the delay time of the inverter (26) to be regulated. Further, since the sources of the MOS transistors (21, 22) are connected with the power supply potentials (fixed potentials) (GND, V dd ) respectively, the delay time being stable even against disturbance is obtained.

Inventors

  • 👤 Hiroshi Satoh
  • 👤 Masao Kaizuka

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-04 17:13
CPC Classifications
H; H03; H03K; H03K5/00; H03K5/01; H03K5/04; H03K5/06; H03K5/13; H03K5/133; H03K2005/00013; H03K2005/00078; H03K2005/0013

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 190 words
A delay circuit comprising: a first N-type MOSFET having a gate to which a first delay time control voltage is applied and a source connected to a low potential power source; a first P-type MOSFET having a gate to which a second delay time control voltage is applied and a source connected to a high potential power source; a second N-type MOSFET having a gate to which an input signal is supplied and a source to which a drain of the first N-type MOSFET is connected; a second P-type MOSFET having a gate and drain which are connected respectively to the gate and drain of the second N-type MOSFET, and a source connected to a drain of the first P-type MOSFET; and a capacitor having two ends, one end being connected to a node between a drain of the second N-type MOSFET and the drain of the second P-type MOSFET, and the other end being connected to one of the low potential power source and the high potential power source; said delay circuit being characterized in that a delay output signal is extracted from said one end of the capacitor.
Claim 2
Dependent Claim 38 words
The delay circuit according to claim 1, characterized in that a waveform shaping circuit is connected to said one end of the capacitor, and said delay output signal is subjected to waveform shaping in the waveform shaping circuit.

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