EP0480580A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method for manufacturing an electrode structure of a semiconductor device
Assignee: Canon Inc
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Filing: 1991-09-09
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Granted: —
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Expires: 2011-09-09
Abstract
Abstract A semiconductor device and a manufacture method for the semiconductor device, the method comprising the steps of forming an insulating film (102) on the surface of a semiconductor substrate (101), forming contact holes in the insulating layer to expose the surface of the semiconductor substrate, selectively depositing a metal film, which contains aluminum as a main ingredient, on the exposed surface to form an electrodes in each the contact hole (103), and forming a wiring (104) made of a second metal, which contains as a principal ingredient an element other than aluminum, on both the insulating layer and the electrode. Preferably, the upper surface of each electrode is substantially flat in a connecting portion between the electrode and the wiring, and a relationship of A ≧ C is established where A is a length of one side of the electrode's upper surface and C is a width of the wiring in the connecting portion therebetween. The metal film is produced at a high deposition rate and a high throughput while ensuring good reliability and presenting superior film characteristics such as step coverage and electro migration.
Inventors
- 👤 Shigeyuki C/O Canon Kabushiki Kaisha Matsumoto
- 👤 Masaru C/O Canon Kabushiki Kaisha Sakamoto
- 👤 Yoshio C/O Canon Kabushiki Kaisha Nakamura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 09:47
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10W20/01; H10W20/031; H10W20/056
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
90 words
A manufacture method for a semiconductor device comprising the steps of: forming an insulating film on the surface of a semiconductor substrate, forming contact holes in said insulating layer to expose the surface of said semiconductor substrate, selectively depositing a metal film, which contains aluminum as a main ingredient, on said exposed surface to form an electrodes in each said contact hole, and forming a wiring made of a second metal, which contains as a principal ingredient an element other than aluminum, on both said insulating layer and said electrode.
Claim 2
Dependent Claim
49 words
A manufacture method for a semiconductor device according to claim 1, wherein said electrode and said wiring are formed in the same film forming chamber or respectively formed in two adjacent film forming chambers capable of moving said substrate therebetween under a condition cut off from the open air.
Claim 3
Dependent Claim
36 words
A manufacture method for a semiconductor device according to claim 1 or 2, wherein the selective deposition of said metal film is performed by a chemical vapor deposition (CVD) process using an alkylaluminum hydride and hydrogen.
Claim 4
Dependent Claim
19 words
A manufacture method for a semiconductor device according to claim 3, wherein said alkylaluminum hydride is a dimethylaluminum hydride.
Claim 5
Dependent Claim
21 words
A manufacture method for a semiconductor device according to any preceding claim, wherein said substrate is directly heated by a lamp.
Claim 6
Dependent Claim
40 words
A manufacture method for a semiconductor device according to any preceding claim, wherein said substrate is heated to have a substrate surface temperature in a range of not lower than 260 o C and not higher than 440 o C.
Claim 7
Dependent Claim
72 words
A semiconductor device comprising a semiconductor substrate, an insulating layer formed on a principal plane of said semiconductor substrate and having openings, electrodes provided in said openings and each including a first metal film which contains aluminum as a main ingredient, and a wiring provided on both said insulating layer and said first metal film and including a second metal film which contains as a main ingredient an element other than aluminum.
Claim 8
Dependent Claim
31 words
A semiconductor device according to claim 7, wherein the second metal film forming said wiring is copper, titanium, gold or an alloy containing any of said metals as a main ingredient.
Claim 9
Dependent Claim
84 words
A semiconductor device having electrodes provided on a principal plane of a semiconductor substrate and connected to semiconductor elements, and a wiring connected to said electrodes, wherein the upper surface of each said electrode is substantially flat in a connecting portion between said electrode and said wiring, and a relationship of A ≧ C is established where A is a length of one side of the upper surface of said electrode and C is a width of said wiring in said connecting portion therebetween.
Claim 10
Dependent Claim
19 words
A semiconductor device according to claim 9, wherein a barrier metal is disposed between said electrode and said wiring.
Claim 11
Dependent Claim
23 words
A semiconductor device according to claim 9, wherein said electrode is formed of monocrystalline aluminum and said wiring is formed of polycrystalline aluminum.
Claim 12
Dependent Claim
21 words
A semiconductor device according to claim 9, wherein said electrode and said wiring are formed of different materials from each other.
Claim 13
Dependent Claim
19 words
A semiconductor device according to claim 9, wherein said electrode and said wiring are formed of the same material.
Claim 14
Dependent Claim
57 words
A manufacture method for the semiconductor device according to claim 9, comprising the steps of depositing, by a selective deposition process, a conductive film in an insulating film which is coated on a semiconductor substrate and has openings, depositing another conductive film on both said insulating material and said conductive film, and patterning said another conductive film.
Claim 15
Dependent Claim
29 words
A manufacture method for a semiconductor device according to claim 14, wherein said selective deposition process is a chemical vapor deposition (CVD) process using an alkylaluminum hydride and hydrogen.
Claim 16
Dependent Claim
19 words
A manufacture method for a semiconductor device according to claim 15, wherein said alkylaluminum hydride contains a methyl group.
Claim 17
Dependent Claim
19 words
A manufacture method for a semiconductor device according to claim 16, wherein said alkylaluminum hydride is a dimethylaluminum hydride.
Claim 18
Dependent Claim
10 words
Electronic equipment using the semiconductor device according to claim 9.
Claim 19
Dependent Claim
39 words
Use of chemical vapour deposition for the deposition of aluminium in contact holes in an insulating layer on a semiconductor substrate, followed, whilst maintaining the substrate in a non-oxidizing atmosphere, by deposition of a second material to form wiring.
References Cited (Backward Citations)
No citation records indexed.
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