EP0480373A2
Expired / Lapsed
EP
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Thin-film semiconductor device
Assignee: Seiko Epson Corp
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Filing: 1991-10-08
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Granted: —
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Expires: 2011-10-08
Abstract
Abstract Disclosed is a thin-film semiconductor device wherein a semiconductor thin-film (13) is formed on an insulating film (12) that has been formed on the surface of a semiconductor substrate (11) doped with a high-concentration active impurity and a semiconductor device is formed on the semiconductor thin-film. Thereby the electrical characteristics of thin-film semiconductor devices can be stabilized.
Inventors
- 👤 Seiichi Iwamatsu
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 10:19
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6708; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/856; H10D30/6727; H10D30/6729; H10D62/00; H10D62/10; H10D62/113; H10D62/115; H10D62/116; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10P; H10P14/00; H10P14/20; H10P14/24; H10P50/00; H10D86/00; H10D86/201
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
44 words
A thin-film semiconductor device wherein a semiconductor thin-film (13) is formed on an insulating film (12) that has been formed on the surface of a semiconductor substrate (11) doped with a high-concentration active impurity and a semiconductor device is formed on the semiconductor thin-film.
Claim 2
Dependent Claim
17 words
The thin-film semiconductor device of claim 1 wherein the high-concentration active impurity is p⁺- type or n⁺-type.
Claim 3
Dependent Claim
33 words
The thin-film semiconductor device of claim 1 or 2 wherein the semiconductor substrate doped with a high-concentration active impurity is a p⁺-type active impurity diffusion layer (26) or an n⁺-type active impurity-diffusion layer.
Claim 4
Dependent Claim
39 words
A thin-film semiconductor device wherein an n-channel MOS FET is formed over an insulating layer (32) in an n-type semiconductor substrate region, and a p-channel MOS FET is formed over the insulating layer in a p-type semiconductor substrate region.
Claim 5
Dependent Claim
29 words
A thin-film semiconductor device wherein the semiconductor film substrate (53) of a thin-film MOS FET is connected to a semiconductor substrate (51) with an insulating layer (52) between them.
Claim 6
Dependent Claim
57 words
A thin-film semiconductor device having an insulating film (64) formed on the surface of a semiconductor thin-film substrate (63) wherein at least an electrode film formed by CVD is connected to the sidewall (66) of the semiconductor thin-film substrate the sidewall being formed by etching the semiconductor thin-film substrate through a contact hole in the insulating film.
Claim 7
Dependent Claim
64 words
A thin-film semiconductor device wherein an insulating layer (74) is formed on the surface of a semiconductor thin-film substrate (73), a contact hole is provided in the insulating layer (74), the semiconductor thin-film substrate being etched through said contact hole to overhang from the sidewall of the contact hole and an electrode is provided self-aligned to the overhanging part of the semiconductor thin-film substrate.
References Cited (Backward Citations)
No citation records indexed.
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