EP0476661A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Press-contact type semiconductor device
Assignee: Toshiba Corp
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Filing: 1991-09-19
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Granted: —
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Expires: 2011-09-19
Abstract
Abstract In a semiconductor device, a pellet electrode (20), which is formed on a mesa-shaped pellet (100), and an external electrode (26), with which a package is provided, are in pressure-contact with each other. A soft-metal plate (30) which has projections (31) along its surface is arranged between the external (26) electrode and the pellet electrode (20).
Inventors
- 👤 Michiaki C/O Intellectual Property Div. Hiyoshi
- 👤 Takashi C/O Intellectual Property Div. Fujiwara
- 👤 Hisashi C/O Intellectual Property Div. Suzuki
- 👤 Hideo C/O Intellectual Property Div. Matsuda
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 16:04
CPC Classifications
H; H10; H10W; H10W72/00; H10W76/00; H10W76/10; H10W76/12; H10W76/13; H10W76/138; H10W72/30; H10W72/381
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
172 words
A press-contact type semiconductor device comprising: a pellet (100, 200, 300) having upper and lower surfaces, said pellet having a mesa portion formed on said upper surface, said lower surface being flat, and a semiconductor element being formed in said pellet; a package (40) enclosing said pellet (100, 200, 300); a first pellet electrode (20) formed on the mesa portion of said pellet (100, 200, 300); a second pellet electrode (24) formed on the lower surface of said pellet (100, 200, 300); a first electrode post (26) which is provided in said package (40) so as to be located above said first pellet electrode (20), and to which pressure (P) is applied; and a second electrode post (32) which is provided in said package (40) so as to be located above said second pellet electrode (24), and to which the pressure (P) is applied; characterized by further comprising: a soft-metal plate (30) arranged between said first pellet electrode (20) and said first electrode post (26) and having projections (31) along its surface.
Claim 2
Dependent Claim
29 words
The press-contact type semiconductor device according to claim 1, characterized in that said projections (31) have a maximum height of 0.5µm or greater when a reference length is 0.25mm.
Claim 3
Dependent Claim
20 words
The press-contact type semiconductor device according to claim 1, characterized in that said soft-metal plate (30) is made of copper.
Claim 4
Dependent Claim
25 words
The press-contact type semiconductor device according to claim 1, characterized in that said first pellet electrode (20) on said mesa portion is made of aluminum.
Claim 5
Dependent Claim
23 words
The press-contact type semiconductor device according to claim 1, characterized in that said semiconductor element formed in said pellet (100) is a thyristor.
Claim 6
Dependent Claim
24 words
The press-contact type semiconductor device according to claim 1, characterized in that said semiconductor element formed in said pellet (200) is a bipolar transistor.
Claim 7
Dependent Claim
23 words
The press-contact type semiconductor device according to claim 1, characterized in that said semiconductor element formed in said pellet (300) is an IGBT.
Claim 8
Dependent Claim
47 words
The press-contact type semiconductor device according to claim 1, further comprising: a first electrode plate (28) arranged between said first electrode post (26) and said soft-metal plate (30); and a second electrode plate (34) arranged between said second electrode post (32) and said second pellet electrode (24).
Claim 9
Dependent Claim
26 words
The press-contact type semiconductor device according to claims 1, characterized in that said soft-metal plate (30) is covered by a conductive and inactive coating film (50).
Claim 10
Dependent Claim
20 words
The press-contact type semiconductor device according to claim 9, characterized in that said coating film (50) is made of gold.
References Cited (Backward Citations)
No citation records indexed.
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