EP0474244A2
Expired / Lapsed
EP
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Plasma processing method
Assignee: Tokyo Electron Ltd
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Filing: 1991-09-06
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Granted: —
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Expires: 2011-09-06
Abstract
Abstract A workpiece (15) is etched with a plasma. First, a chamber (11) is provided in which a pair of electrodes (24, 12) are arranged parallel to each other at a distance. The electrodes (24, 12) define a plasma generation area therebetween. The workpiece (15) is arranged in the chamber (11). The chamber (11) is evacuated, and a desired plasma generation gas is introduced into the plasma generation area. Light having a wavelength of not more than 436 nm is radiated onto the gas in the plasma generation area for a predetermined period of time. Then, a high-frequency power is applied across the electrodes (24, 12) to generate a plasma from the plasma generation gas. The workpiece (15) is etched with the generated plasma.
Inventors
- 👤 Yoshio Fukasawa
- 👤 Kenji Momose
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 17:46
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H10; H10P; H10P95/00; H01J37/32321
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
130 words
A method of etching a workpiece with a plasma, comprising the steps of: providing a chamber in which first and second electrodes are arranged parallel to each other at a distance, said first and second electrodes defining a plasma generation area therebetween; evacuating said chamber; introducing a desired plasma generation gas into said plasma generation area; radiating light having a spectral line having a wavelength of not more than 436 nm onto the gas in the plasma generation area for a predetermined period of time so as to precipitate generation of a plasma from the plasma generation gas; applying a high-frequency power across said first and second electrodes after the radiation of the light, thereby generating the plasma from the plasma generation gas; and etching the workpiece with the plasma.
Claim 2
Dependent Claim
18 words
The method according to claim 1, characterized in that said light is radiated from a low-pressure mercury lamp.
Claim 3
Dependent Claim
22 words
The method according to claim 1, characterized in that said plasma generation gas has a pressure of not more than 1 Torr.
Claim 4
Dependent Claim
19 words
The method according to claim 1, characterized in that said light is radiated for not more than 10 seconds.
Claim 5
Dependent Claim
38 words
The method according to claim 1, characterized in that said high-frequency power is applied across said first and second electrodes after the radiation of said light, and said light is shut off after said generated gas is stabilized.
Claim 6
Independent Claim
139 words
A method of processing a workpiece with a plasma, comprising the steps of: providing a chamber in which first and second electrodes are arranged parallel to each other at a distance, said first and second electrodes defining a plasma generation area therebetween; evacuating said chamber; introducing a desired plasma generation gas into the plasma generation area; radiating light having a spectral line having a wavelength of not more than 436 nm onto the gas in the plasma generation area for a predetermined period of time so as to precipitate generation of the plasma from the plasma generation gas; applying a high-frequency power across said first and second electrodes, after radiation of said light or at the same time said light is shut off, thereby generating a plasma from the plasma generation gas; and processing the workpiece with said plasma.
Claim 7
Dependent Claim
18 words
The method according to claim 6, characterized in that said light is radiated from a low-pressure mercury lamp.
Claim 8
Dependent Claim
22 words
The method according to claim 6, characterized in that said plasma generation gas has a pressure of not more than 1 Torr.
Claim 9
Dependent Claim
19 words
The method according to claim 6, characterized in that said light is radiated for not more than 10 seconds.
Claim 10
Dependent Claim
21 words
The method according to claim 8, characterized in that said high-frequency power falls within a range of 50 to 500 W.
Claim 11
Dependent Claim
16 words
The method according to claim 6, characterized in that said processing is etching of the workpiece.
Claim 12
Dependent Claim
17 words
The method according to claim 11, characterized in that said plasma generation gas contains hydrogen bromide gas.
Claim 13
Dependent Claim
36 words
The method according to claim 12, characterized in that said plasma generation gas further contains at least one gas selected from the group consisting of hydrogen chloride gas, oxygen gas, chlorine gas, and sulfur hexafluoride gas.
Claim 14
Dependent Claim
17 words
The method according to claim 12, characterized in that said plasma generation gas is diluted with helium.
Claim 15
Dependent Claim
26 words
The method according to claim 12, characterized in that said workpiece comprises a semiconductor wafer having a polysilicon or silicon nitride film on a surface thereof.
Claim 16
Dependent Claim
29 words
The method according to claim 12, characterized in that said workpiece comprises a semiconductor wafer having a tungsten silicide/polysilicon or a molybdenum silicide/polysilicon laminate film on a surface thereof.
References Cited (Backward Citations)
No citation records indexed.
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