EP0472221A2
Expired / Lapsed
EP
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Method for fabricating an optical semiconductor device
Assignee: NEC Corp
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Filing: 1991-08-26
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Granted: —
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Expires: 2011-08-26
Abstract
Abstract A method for fabricating an optical semiconductor device includes the steps of forming at least two stripes of dielectric parallel to each other with a predetermined interval on a semiconductor substrate, growing a crystal selectively between the two stripes, and forming a multi-layer structure which is required to have a width determined by the crystal grown between the two stripes. In such a method, the width of the multi-layer structure including an active layer or a waveguide is controlled precisely, because there is no step of etching a semiconductor layer, so that the characteristics of the device may improve and the yield may increase.
Inventors
- 👤 Tatsuya C/O Nec Corporation Sasaki
- 👤 Ikuo C/O Nec Corporation Mito
- 👤 Tomoaki C/O Nec Corporation Katoh
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 10:01
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H01; H01S; H01S3/00; H01S3/10; H01S3/105; H01S3/1055; H01S5/00; H01S5/02; H01S5/026; H01S5/04; H01S5/042; H01S5/0425; H01S5/04256; H01S5/10; H01S5/11; H01S5/20; H01S5/22; H01S5/227; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H01S5/0265; H01S5/06; H01S5/062; H01S5/0625; H01S5/06255; H01S5/06256; H01S5/16; H01S5/164; H01S5/2054; H01S5/2077; H01S5/2272; H01S5/30; H01S5/34; H01S5/343; H01S5/34306; H01S5/34313; H01S5/3434; Y; Y10; Y10S; Y10S148/00; Y10S148/026
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
82 words
A method for fabricating an optical semiconductor device, comprising the steps of: forming a dielectric layer on a semiconductor substrate; patterning said dielectric layer to be at least two stripes parallel to each other with a predetermined interval; growing a crystal selectively on said Semiconductor substrate with using said stripes of said dielectric layer as a mask; and forming a multi-layer structure which is required to have a predetermined width determined by a width of said crystal grown between said two stripes.
Claim 2
Independent Claim
82 words
A method for fabricating an optical semiconductor device, comprising the steps of: forming a dielectric layer on a semiconductor substrate; patterning said dielectric layer to be at least two stripes parallel to each other with a predetermined interval; growing a crystal selectively on said Semiconductor substrate with using said stripes of said dielectric layer as a mask; and forming a multi-layer structure which is required to have a predetermined width determined by a width of said crystal grown between said two stripes.
Claim 3
Dependent Claim
27 words
A method for fabricating an optical semiconductor device, according to claim 1: wherein said step of growing a crystal is carried out by metalorganic vapor phase epitaxy.
Claim 4
Dependent Claim
37 words
A method for fabricating an optical semiconductor device, according to claim 1 or 2, further comprising a step of: etching said stripes of said dielectric layer to change the width for further selective growth of a crystal.
Claim 5
Dependent Claim
32 words
A method for fabricating an optical semiconductor device, according to claim 1, 2 or 3, wherein said step of forming a dielectric layer is a step of forming an SiO 2 layer.
Claim 6
Dependent Claim
44 words
A method for fabricating an optical semiconductor device, according to claim 1: wherein said step of forming a multi-layer structure is a step of forming a multi-layer structure including a layer selected from a group consisting of an active layer and a waveguide layer.
Claim 7
Independent Claim
88 words
A method for fabricating an optical semiconductor device, according to any one of claims 1 to 5, further comprising the steps of: etching said two stripes of said dielectric layer in part facing each other to expose a surface of said semiconductor substrate after said step of growing a crystal; and growing a crystal selectively to be a clad layer on said semiconductor substrate at least including the area between said two stripes of said dielectric layer after said step of etching said two stripes of said dielectric.
Claim 8
Independent Claim
150 words
A method for fabricating an optical semiconductor device, comprising the steps of: forming first and second regions on a semiconductor crystal substrate, said first region having a surface having diffraction lattices and said second region having a flat surface; forming a multi-layer semiconductor substrate including a semiconductor guide layer on said fabricated surface of said semiconductor crystal substrate; forming at least two stripes of dielectric layer sandwiching an optical waveguide region on said multi-layer semiconductor substrate, said stripes being parallel each other with a predetermined interval and each of said stripes having a width which is wider in said first region and is narrower in said second region; forming a multi-layer semiconductor layer including an active layer by selective growth on a surface of said multi-layer semiconductor substrate including said optical waveguide region; and forming a semiconductor laser and a semiconductor optical modulator in said first and second regions, respectively.
Claim 9
Independent Claim
150 words
A method for fabricating an optical semiconductor device, comprising the steps of: forming first and second regions on a semiconductor crystal substrate, said first region having a surface having diffraction lattices and said second region having a flat surface; forming a multi-layer semiconductor substrate including a semiconductor guide layer on said fabricated surface of said semiconductor crystal substrate; forming at least two stripes of dielectric layer sandwiching an optical waveguide region on said multi-layer semiconductor substrate, said stripes being parallel each other with a predetermined interval and each of said stripes having a width which is wider in said first region and is narrower in said second region; forming a multi-layer semiconductor layer including an active layer by selective growth on a surface of said multi-layer semiconductor substrate including said optical waveguide region; and forming a semiconductor laser and a semiconductor optical modulator in said first and second regions, respectively.
Claim 10
Independent Claim
165 words
A method for fabricating an optical semiconductor device, comprising the steps of: forming first to third regions on a semiconductor crystal substrate, each of said first and second regions having a flat surface and said third region having a surface having diffraction lattices; forming a multi-layer semiconductor substrate including a semiconductor guide layer on said fabricated surface of said semiconductor crystal substrate; forming at least two stripes of dielectric layer sandwiching an optical waveguide region on said multi-layer semiconductor substrate, said stripes being parallel each other with a predetermined interval and each of said stripe having a width which is wider in said first region and is narrow and the same in said second and third regions; forming a multi-layer semiconductor layer including an active layer by selective growth on a surface of said multi-layer semiconductor substrate including said optical waveguide region; and forming a light emission unit, a phase control unit and a wavelength variable braggy reflector in said first to third regions, respectively.
Claim 11
Independent Claim
165 words
A method for fabricating an optical semiconductor device, comprising the steps of: forming first to third regions on a semiconductor crystal substrate, each of said first and second regions having a flat surface and said third region having a surface having diffraction lattices; forming a multi-layer semiconductor substrate including a semiconductor guide layer on said fabricated surface of said semiconductor crystal substrate; forming at least two stripes of dielectric layer sandwiching an optical waveguide region on said multi-layer semiconductor substrate, said stripes being parallel each other with a predetermined interval and each of said stripe having a width which is wider in said first region and is narrow and the same in said second and third regions; forming a multi-layer semiconductor layer including an active layer by selective growth on a surface of said multi-layer semiconductor substrate including said optical waveguide region; and forming a light emission unit, a phase control unit and a wavelength variable braggy reflector in said first to third regions, respectively.
References Cited (Backward Citations)
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