EP0470784A2
Expired / Lapsed
EP
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Method for selectively depositing a thin film
Assignee: Motorola Solutions Inc
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Filing: 1991-08-02
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Granted: —
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Expires: 2011-08-02
Abstract
Abstract An apparatus and method for selectively depositing a thin film by projecting geometric features on a semiconductor wafer. Semiconductor wafer (17) is mounted in a chemical vapor deposition chamber (18) that has a projection means. A gas species is injected though gas input (19).and travels across wafer (17) to exhaust port (21). The gas species has a low photodissociation energy level so that when exposed to an ultraviolet light source deposition on the semiconductor wafer (17) takes place.
Inventors
- 👤 Edward M. Keller
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 02:59
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/48; C23C16/482; C23C16/04; C23C16/047
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
81 words
A method for selectively depositing a thin film by projecting geometric features onto a semiconductor wafer which comprises: mounting the semiconductor wafer (17) in a chemical vapor deposition reactor (18) that has a projection means; flowing a low energy photodissociation gas species into the chemical vapor deposition reactor (18); and directing an ultraviolet light source (10) though the projection means to generate a predetermined geometric pattern on the semiconductor wafer (17) so that at least a patterned monomolecular film is produced.
Claim 2
Dependent Claim
27 words
The method of claim 1 further including treating the semiconductor wafer in a pre-conditioning chamber to enhance the deposition of the thin film in the exposed areas.
Claim 3
Dependent Claim
28 words
The method of claim 1 further including using a chemical vapor deposition chamber for enhancing the monomolecular film to full thickness by selectively depositing on the monomolecular film.
Claim 4
Independent Claim
100 words
A method of selectively depositing a thin film by projecting images on a wafer (17) comprising: mounting the wafer (17) in a chemical vapor deposition reactor (18) that has an ultraviolet transparent window (14); flowing a gas with a low energy of activation for photodissociation into the chemical vapor deposition reactor (18); directing an ultraviolet light source (10) though the projection means (14) to expose an area of the wafer (17) so that at least a monomolecular film is produced, and flowing a gas that reacts selectively with the monomolecular film to grow the thin film to a predetermined thickness.
Claim 5
Independent Claim
58 words
An apparatus for selectively depositing a thin film by projecting a geometric pattern onto a semiconductor wafer (17) which comprises: a chemical vapor deposition reactor (18) that has a geometric projecting means and means for receiving the semiconductor wafer (17); and gas flow means for injecting low activation energy photodissociation gas into the chemical vapor deposition reactor (18).
Claim 6
Dependent Claim
28 words
The apparatus of claim 5 further including a preconditioning chamber to pretreat the wafer prior for the enhancement of deposition of the thin film in the exposed areas.
Claim 7
Independent Claim
87 words
A method for selectively depositing a metal film on a wafer surface comprising the steps of: placing a wafer (17) in a chemical vapor deposition reactor (18) having projection means; introducing a gas species having a relatively low activation energy into said reactor (18); and projecting a metalization pattern onto a surface of said wafer (17) with said projection means, said patterned projection having an energy capable of activating said gas species so that it selectively deposits on said wafer (17) surface in a so lid state.
Claim 8
Independent Claim
85 words
A method of providing conductive lines on a semiconductor wafer comprising: providing a low energy light source (10); placing a semiconductor wafer (17) in a chemical vapor deposition reactor (18); providing a gas which is reactive to the low energy light source (10) into the reactor (18); and directing a light beam from the low energy light source (10) through a pattern generating means onto the semiconductor wafer (17) to provide the conductive lines from elements released by the gas caused by the light beam.
Claim 9
Independent Claim
98 words
A method for selectively depositing a thin film by projecting geometric features onto a semiconductor wafer which comprises: mounting the semiconductor wafer (17) in a chemical vapor deposition lithographic reactor (18); injecting a low activation energy photodissociation gas into the chemical vapor deposition lithographic reactor (18); sealing the chemical vapor deposition lithographic reactor to hold the low activation photodissociation energy gas in the chemical vapor deposition lithographic reactor (18); and directing an energy source from projecting means though the low activation energy photodissociation gas to produce at least a monolayer of selective film on the semiconductor wafer (17).
References Cited (Backward Citations)
No citation records indexed.
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