Method for manufacturing a semiconductor memory device

Abstract

Abstract A method for manufacturing a semiconductor device including steps of (i) laminating a first insulating film over a semiconductor substrate having a plurality of gate electrodes, on which side walls are at least formed, through capacitor formation regions, removing the first insulating film in the capacitor formation region so as to form a direct contact, and laminating a first conductive film over the semiconductor substrate including the residual first insulating film, (ii) removing the first conductive film with remaining at least in the capacitor formation region, (iii) sequentially laminating over the semiconductor substrate including the residual first conductive film (a) a second insulating film, a second conductive film and a third insulating film, or (b) a second insulating film and a second conductive film, and then laminating a resist layer over the whole surface, and (iv) patterning the resist layer and removing with the use of a resist pattern (a) the third insulating film, second conductive film, second insulating film and first conductive film, or (b) the second conductive film, second insulating film and first conductive film, so that the capacitor electrodes of a FEC type DRAM cell including a capacitor upper electrode, a capacitor insulating film and a capacitor lower electrode can be formed in the capacitor formation region.

Inventors

• 👤 Narakazu Shimomura
• 👤 Masahiro Hasegawa

Bibliographic Details