EP0469807A2
Expired / Lapsed
EP
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Quantum field effect device
Assignee: Individual
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Filing: 1991-07-26
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Granted: —
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Expires: 2011-07-26
Abstract
Abstract Semiconductor devices having at least three terminals and a single PN junction using quantum-effect tunneling for the primary conduction modes, including gates 32 and 34, drains 28 and 30, and sources 24 and 26, with the capability of operation in a unidirectional mode with implicit well taps or in bidirectional mode for pass gates. <IMAGE>
Inventors
- 👤 Marion Eugene Cavanaugh
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 23:58
CPC Classifications
H; H10; H10D; H10D12/00; H10D12/211
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
166 words
A quantum field effect transistor device comprising: a semiconductor body of a first conductivity type, a source region in said body of said first conductivity type, said source region having a dopant concentration on the order of 10²⁰ atoms per cubic centimeter, a drain region in said body of a second conductivity type opposite to said first conductivity type, said drain region having a dopant concentration on the order of 10²⁰ atoms per cubic centimeter, said source region including a source extension with a dopant concentration on the order of 10¹⁹ atoms per cubic centimeter which contacts said drain region and forms a PN junction, a gate adjacent to said PN junction, means for forward biasing said PN junction, and means for voltage biasing said gate, modulating the conductivity of said source region and thereby modulating the width of said PN junction so that carrier tunneling through said PN junction is controlled between said source region and said drain region with said PN junction forward biased.
Claim 2
Dependent Claim
75 words
The device of claim 1 wherein said source region is a shallow dopant region on the order of 1000 Angstroms in depth, said drain region is a shallow dopant region on the order of 1000 Angstroms in depth, said source extension is a shallow dopant region approximately 100 Angstroms in depth, and is adjacent to said surface of said semiconductor body, and said gate is a thin layer on the order 1000 Angstroms in thickness.
Claim 3
Dependent Claim
219 words
A quantum field effect transistor device comprising: a semiconductor body of a first conductivity type, a first drain region of a second conductivity type opposite to said first conductivity type, a second drain region of said second conductivity type, said second drain region being spaced from said first drain region, said first drain region and said second drain region having a dopant concentration on the order of 10²⁰ atoms per cubic centimeter, a source region in said body of said first conductivity type and forming PN junctions with said first drain region and second drain region, said source region having a dopant concentration on the order of 10²⁰ atoms per cubic centimeter, said source region including a source extension with a dopant concentration on the order of 10¹⁹ atoms per cubic centimeter which contacts said drain regions and forms said PN junctions, means for forward biasing said PN junctions, a gate adjacent to said source region and said PN junctions, and means for voltage biasing said gate and forward biasing said PN junctions, modulating the conductivity of said source region and thereby modulating the widths of said PN junctions so that carrier tunneling through said PN junctions is controlled between said source region and said first drain region and said second drain region with said PN junctions forward biased.
Claim 4
Dependent Claim
81 words
The device of claim 3, wherein said source region is a shallow dopant region on the order of 1000 Angstroms in depth, said first drain region and said second drain region are shallow dopant regions on the order of 1000 Angstroms in depth, said source extension is a shallow dopant region approximately 100 Angstroms in depth, and is adjacent to said surface of said semiconductor body, and said gate is a thin layer on the order of 1000 Angstroms in thickness.
Claim 5
Independent Claim
39 words
The device of any preceding claim, wherein said body includes a well region which is a shallow region on the order of 0.5 micron deep, and the surface dimensions are at least large enough to contain said drain region.
Claim 6
Independent Claim
29 words
The device of any preceding claim, wherein the region between said gate and said source extension is an insulating layer and has a thickness of 10 to 50 Angstroms.
Claim 7
Independent Claim
54 words
The device of any of claims 1 to 5, wherein the region between said gate and said source extension is a semiconductive region so that a Schottky diode is formed above said source extension and forms a depleted region thin enough, on the order of 10 to 200 Angstroms, to modulate said source extension.
Claim 8
Independent Claim
38 words
The device of any preceding claim, wherein said source extension has a dopant concentration so that said device is of the depletion mode type and is conductive when said gate and said source are at the same voltage.
Claim 9
Independent Claim
31 words
The device of any preceding claim, wherein said device can be made less conductive by biasing said gate with a suitable voltage of the opposite polarity than the drain supply voltage.
References Cited (Backward Citations)
No citation records indexed.
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