EP0469587A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Improvements in or relating to integrate circuits
Assignee: Texas Instruments Inc
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Filing: 1991-07-31
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Granted: —
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Expires: 2011-07-31
Abstract
Abstract A circuit for providing a bias to the substrate of a dynamic memory device having a memory array and peripheral circuitry formed in a semiconductor substrate is disclosed. The circuit includes a first pump and oscillator to provide a substrate bias in a memory standby mode. A second power pump and oscillator is included to provide a substrate bias when the memory is active. A booster oscillator and pump to provide a substrate bias when the memory is active and when the substrate voltage level is greater than a preset level is also provided. A method for controlling the voltage level of the substrate upon which a dynamic memory device is formed is also disclosed.
Inventors
- 👤 Donald J. Redwine
- 👤 Narasimhan Iyengar
- 👤 Dan R. Cline
- 👤 Wah Kit Loh
- 👤 Hugh P. Mcadams
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 15:06
CPC Classifications
G; G11; G11C; G11C5/00; G11C5/14; G11C5/145; G11C5/146; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/205; H; H10; H10W; H10W72/00; H10W72/071; H10W72/073; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W72/851; H10W72/853; H10W72/865; H10W74/00; H10W90/00; H10W90/701; H10W90/731; H10W90/736; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
56 words
An integrated circuit device formed in a semiconductor substrate, and having a circuit for providing a bias to said substrate, said circuit comprising: a first bias generator to provide a substrate bias in a standby mode of said device, and a second bias generator to provide a substrate bias in an active mode of said device.
Claim 2
Dependent Claim
56 words
An integrated circuit device formed in a semiconductor substrate, and having a circuit for providing a bias to said substrate, said circuit comprising: a first bias generator to provide a substrate bias in a standby mode of said device, and a second bias generator to provide a substrate bias in an active mode of said device.
Claim 3
Dependent Claim
42 words
An integrated circuit device as claimed in claim 1 and wherein said circuit further comprises a third bias generator to provide a substrate bias in the active mode of said device and when the substrate voltage level falls below a preset level.
Claim 4
Dependent Claim
53 words
An integrated circuit device as claimed in claim 1 or claim 2 and wherein said circuit for providing a bias to said substrate is adapted to adjust to provide a bias to said substrate less than a level which adversely increases Vt of the device transistors, yet sufficient to avoid junction leakage currents.
Claim 5
Dependent Claim
29 words
An integrated circuit device as claimed in any preceding claim and wherein said substrate is a p-type substrate, and said circuit provides a bias level of about -2 volts.
Claim 6
Dependent Claim
37 words
An integrated circuit device as claimed in any preceding claim and wherein said first bias generator is adapted to activate upon power up of said device and remains active until the power of the device is removed.
Claim 7
Dependent Claim
24 words
An integrated circuit device as claimed in any preceding claim and wherein at least one of said bias generators includes an oscillator and pump.
Claim 8
Dependent Claim
32 words
An integrated circuit device as claimed in any preceding claim and wherein said first bias generator includes an oscillator and pump adapted to run continuously whilst power is applied to said device.
Claim 9
Dependent Claim
26 words
An integrated circuit device as claimed in any preceding claim and wherein a bias generator includes means to drive an oscillator to produce a square wave.
Claim 10
Dependent Claim
38 words
An integrated circuit device as claimed in claim 8 and wherein said means to drive said oscillator to produce a square wave comprises a plurality of stage each for successively steepening the wave gradient of said square wave.
Claim 11
Dependent Claim
27 words
An integrated circuit device as claimed in claim 8 or claim 9 and wherein said oscillator comprises a plurality of inverters to provide said square wave signals.
Claim 12
Dependent Claim
36 words
An integrated circuit device as claimed in a preceding claim and including dynamic memory wherein said second oscillator and pump provide a substrate bias when a RAS control input of said memory changes to active low.
Claim 13
Dependent Claim
28 words
An integrated circuit as claimed in any preceding claim and wherein said first oscillator is of relatively lower power and said second oscillator is of relatively higher power.
Claim 14
Dependent Claim
39 words
An integrated circuit device as claimed in claim 2 or any of claims 3 to 12 in that they depend from claim 2 and wherein said third bias generator has a higher driving capability than said second bias generator.
Claim 15
Independent Claim
91 words
A method for controlling voltage level of a substrate upon which an integrated circuit device is formed, comprising the steps of: providing a low power oscillator and pump to provide a substrate bias in a standby mode of said device. providing a high power oscillator and pump to provide a substrate bias in an active mode of said device, and providing a booster oscillator and pump to provide a substrate bias when said device is in said active mode and when the substrate voltage level is greater than a preset level.
Claim 16
Independent Claim
91 words
A method for controlling voltage level of a substrate upon which an integrated circuit device is formed, comprising the steps of: providing a low power oscillator and pump to provide a substrate bias in a standby mode of said device. providing a high power oscillator and pump to provide a substrate bias in an active mode of said device, and providing a booster oscillator and pump to provide a substrate bias when said device is in said active mode and when the substrate voltage level is greater than a preset level.
Claim 17
Dependent Claim
50 words
the method for controlling substrate voltage of claim 14 further comprising the step of adjusting said circuit to bias said substrate to a bias level less than a level which adversely increases Vt of the transistors of the device, and to a sufficiently high level to avoid junction leakage currents.
References Cited (Backward Citations)
No citation records indexed.
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