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EP0467799A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Overvoltage protection device and monolithic manufacturing process thereof

Assignee: STMicroelectronics SA
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Filing: 1991-07-09
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Granted: —
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Expires: 2011-07-09
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Abstract

Abstract Translated from French La présente invention concerne un dispositif de protection contre des surtensions susceptibles de survenir entre deux bornes A et B comprenant, entre ces bornes, un thyristor à déclenchement par avalanche (6) ayant une tension de retournement (VBO) déterminée. Ce dispositif comprend en outre une diode zener (4) montée en parallèle, tête-bêche, avec le thyristor, cette diode étant choisie pour que sa tension d'avalanche (VBR) soit inférieure à ladite tension de retournement et ne devienne supérieure que pour des surtensions présentant une durée ou une amplitude supérieure à un seuil prédéterminé. <IMAGE> The present invention relates to a device for protection against overvoltages liable to occur between two terminals A and B comprising, between these terminals, an avalanche triggered thyristor (6) having a determined reversing voltage (VBO). This device further comprises a zener diode (4) mounted in parallel, head to tail, with the thyristor, this diode being chosen so that its avalanche voltage (VBR) is lower than said reversal voltage and only becomes higher for overvoltages having a duration or an amplitude greater than a predetermined threshold. <IMAGE>

Inventors

  • 👤 Albert Senes

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-31 19:36
CPC Classifications
H; H02; H02H; H02H9/00; H02H9/04; H10; H10D; H10D8/00; H10D8/80; H10D89/00; H10D89/60; H10D89/601; H10D89/711

Claims Analysis

Total Claims: 0
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References Cited (Backward Citations)

FR2382789A1 Cited
FR2433845A1 Cited
FR2598043A1 Cited
GB2208257A Cited
WO1990003681A1 Cited

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