EP0465264A2
Expired / Lapsed
EP
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Metal film forming method
Assignee: Individual
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Filing: 1991-07-05
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Granted: —
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Expires: 2011-07-05
Abstract
Abstract A metal film forming method comprises steps of: forming a non-monocrystalline metal film principally composed of aluminum, in contact, at least in a part thereof, with a monocrystalline metal principally composed of aluminum; and heating the non-monocrystalline metal film to convert at least a part thereof into monocrystalline state.
Inventors
- 👤 Kazuo Tsubouchi
- 👤 Kazuya Masu
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 19:20
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4405; H10P; H10P95/00; H10W20/01; H10W20/031; H10W20/056
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
49 words
A metal film forming method comprising steps of: forming a non-monocrystalline metal film principally composed of aluminum, in contact, at least in a part thereof, with a monocrystalline metal principally composed of aluminum; and heating said non-monocrystalline metal film to convert at least a part thereof into monocrystalline state.
Claim 2
Dependent Claim
95 words
A metal film forming method for a semiconductor device, comprising steps of: forming an insulation film on a principal surface of a semiconductor substrate; forming an aperture in said insulation film thereby exposing the surface of said semiconductor therein; depositing a first monocrystalline metal principally composed of aluminum, in said aperture, forming a second metal film principally composed of aluminum on said first monocrystalline metal and on said insulation film; and heating said second metal film to convert at least a part thereof to monocrystalline state, utilizing said first monocrystalline metal as a seed crystal.
Claim 3
Dependent Claim
33 words
A method according to claim 2, wherein an aluminum single crystal is deposited as said first monocrystalline metal, selectively in said aperture by a CVD method employing dimethylaluminum hydride gas and hydrogen gas.
Claim 4
Dependent Claim
25 words
A method according to claim 2 or 3, wherein said heating is conducted after a second insulation film is formed on said second metal film.
Claim 5
Dependent Claim
19 words
A method according to claim 2 to 4, wherein said second metal film is heated to 550°C or higher.
Claim 6
Dependent Claim
17 words
A method according to claim 5, wherein said second metal film is heated by resistance heating method.
Claim 7
Dependent Claim
17 words
A method according to claim 5, wherein said second metal film is heated by radiation heating method.
Claim 8
Dependent Claim
18 words
A method according to claim 5, wherein said second metal film is heated by laser beam heating method.
Claim 9
Dependent Claim
18 words
A method according to claim 5, wherein said second metal film is heated by electron beam heating method.
Claim 10
Dependent Claim
17 words
A method according to claim 5, wherein said second metal film is heated by induction heating method.
Claim 11
Dependent Claim
66 words
A metal film forming method comprising steps of: forming a non-monocrystalline metal film principally composed of aluminum, in contact, in at least a part thereof, with a monocrystalline metal principally composed of aluminum; converting said non-monocrystalline metal film into amorphous or microcrystalline state; and heating said non-monocrystalline metal film converted into said amorphous or microcrystalline state to convert at least a part thereof into monocrystalline state.
Claim 12
Dependent Claim
19 words
A method according to claim 11, wherein said conversion to amorphous or microcrystalline state is conducted by ion implantation.
Claim 13
Dependent Claim
105 words
A metal film forming method for a semiconductor device, comprising steps of: forming an insulation film on a principal surface of a semiconductor substrate; forming an aperture in said insulation film thereby exposing the surface of said semiconductor; depositing a first monocrystalline metal principally composed of aluminum, in said aperture; forming a second metal film principally composed of aluminum, on said first monocrystalline metal and on said insulation film; converting said second metal film into amorphous or microcrystalline state; and heating said second metal film to convert at least a part thereof into monocrystalline state, by utilizing said first monocrystalline metal as a seed crystal.
Claim 14
Dependent Claim
33 words
A method according to claim 13, wherein an aluminum single crystal is deposited as said first monocrystalline metal, selectively in said aperture by a CVD method employing dimethylaluminum hydride gas and hydrogen gas.
Claim 15
Dependent Claim
21 words
A method according to claim 13 or 14, wherein said conversion to amorphous or microcrystalline state is conducted by ion implantation.
Claim 16
Independent Claim
27 words
A method according to any of claims 13 to 15, wherein said heating is conducted after a second insulation film is formed on said second metal film.
Claim 17
Independent Claim
21 words
A method according to any of claims 13 to 16, wherein said second metal film is heated to 250°C or higher.
References Cited (Backward Citations)
No citation records indexed.
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