EP0463741A2
Expired / Lapsed
EP
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Method of manufacturing a semiconductor memory device containing a capacitor
Assignee: Canon Inc
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Filing: 1991-05-29
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Granted: —
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Expires: 2011-05-29
Abstract
Abstract A semiconductor device comprises a capacitor consisting of an Al region formed on a semiconductor substrate, an Al oxide film formed on a surface of said Al region, and electrodes opposed to said Al region with interposition of said Al oxide film. The Al region can be grown selectively to produce freestanding mushroom-like structures without further pattering steps.
Inventors
- 👤 Shunsuke Inoue
- 👤 Yukihiko Sakashita
- 👤 Yoshio Nakamura
- 👤 Shin Kikuchi
- 👤 Hiroshi Yuzurihara
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 05:49
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/37
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
44 words
A semiconductor device characterized by comprising a capacitor consisting of an Al region formed on a semiconductor substrate, an Al oxide film formed on a surface of said Al region, and electrodes opposed to said Al region with interposition of said Al oxide film.
Claim 2
Dependent Claim
26 words
A semiconductor device according to claim 1 characterized in that said Al region contains at least one kind of atoms selected from Si, Ti and Cu.
Claim 3
Dependent Claim
23 words
A semiconductor device according to claim 1 or 2 characterized by comprising a dielectric layer between said Al oxide film and said electrodes.
Claim 4
Independent Claim
67 words
A method for manufacturing a semiconductor device having a capacitor for accumulating charges, characterized by including: a process of forming one of electrodes constituting said capacitor by depositing Al or a metal with the base of Al, with the CVD method using a gas of alkyl aluminum hydride and hydrogen; and a process of forming an aluminum oxide film on a surface of one of said electrodes.
Claim 5
Dependent Claim
28 words
A method for manufacturing a semiconductor device according to claim 4 characterized in that said CVD method is a CVD method using dimethyl aluminum hydride and hydrogen gas.
Claim 6
Dependent Claim
32 words
A method for manufacturing a semiconductor device according to claim 4 or 5 characterized by further including a process of forming a dielectric layer on a surface of said aluminum oxide film.
Claim 7
Dependent Claim
32 words
A semiconductor device characterized by comprising a capacitor consisting of a longitudinal Al region formed on a semiconductor substrate, and electrodes opposed to said Al region with interposition of a dielectric layer.
Claim 8
Dependent Claim
22 words
A semiconductor device according to claim 7 characterized in that said Al region is deposited on one of MOSFET source and drain.
Claim 9
Dependent Claim
20 words
A semiconductor device according to claim 7 or 8 characterized in that said dielectric layer is an Al oxide film.
Claim 10
Dependent Claim
26 words
A semiconductor device according to claim 7 characterized in that said Al region contains at least one kind of atoms selected from Si, Ti and Cu.
Claim 11
Dependent Claim
77 words
A semiconductor device characterized by comprising a capacitive element including: a first electrode having a lower layer portion formed on a lower surface within an opening where the lower surface is exposed formed in an insulation film on the conductive lower surface and an upper layer portion extending out in a direction from said lower layer portion along said lower surface; and a second electrode formed via a dielectric film on a surface of said first electrode.
Claim 12
Dependent Claim
37 words
A semiconductor device according to claim 11 characterized in that said first electrode contains an electric conductive material of either Al metal or Al alloy containing at least one kind of atoms among Si, Ti and Cu.
Claim 13
Dependent Claim
17 words
A semiconductor device according to claim 11 or 12 characterized in that said dielectric film is Al₂O₃.
Claim 14
Dependent Claim
28 words
A semiconductor device according to claim 11, 12 or 13 characterized by having a dielectric layer between said dielectric film and at least one of said both electrodes.
Claim 15
Independent Claim
169 words
A method for manufacturing a semiconductor device characterized by including: a process of forming a first electrode having an upper layer portion and a lower layer portion in which said lower layer portion is formed by depositing selectively conductive material on a lower surface within an opening where the lower surface is exposed formed in an insulation film on the conductive lower surface and then said upper layer portion is formed by depositing selectively conductive material in a direction from an upper portion of said lower layer portion along said lower surface; a process of exposing a lower face of said upper layer portion and a surface of said lower layer portion by removing a portion of said insulation film which is located under said upper layer portion of said first electrode and surrounding said lower layer portion; a process of forming a dielectric film on said exposed surface of said first electrode; and a process of forming a second electrode composed of conductive material on said dielectric film.
Claim 16
Dependent Claim
37 words
A method for manufacturing a semiconductor device according to claim 15 characterized in that the process of forming said first electrode can be accomplished with the CVD method using a gas of alkyl aluminum hydride and hydrogen.
Claim 17
Dependent Claim
22 words
A method for manufacturing a semiconductor device according to claim 16 characterized in that said alkyl aluminum hydride is dimethyl aluminum hydride.
Claim 18
Dependent Claim
24 words
A method for manufacturing a semiconductor device according to claim 16 or 17 characterized in that said dielectric film is an aluminum oxide film.
Claim 19
Dependent Claim
33 words
A method for manufacturing a semiconductor device according to any one of claim 15, 16, 17 or 18 characterized by further including a process of forming a dielectric layer on said dielectric film.
References Cited (Backward Citations)
No citation records indexed.
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