EP0460710A2
Expired / Lapsed
EP
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Gallium nitride group compound semiconductor and luminous element comprising it and the process of producing the same
Assignee: Nagoya University
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Filing: 1988-01-28
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Granted: —
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Expires: 2008-01-28
Abstract
Abstract A thin film of SiO₂ is patterned on an N layer consisting of N-type Aℓ x Ga 1-x N (inclusive of x = 0). Next, I-type Aℓ x Ga 1-x N (inclusive of x = 0) is selectively grown and the portion on the N layer grows into an I-layer consisting an active layer of a light emitting diode, and that on the SiO₂ thin film grows into a conductive layer. Electrodes are formed on the I-layer and conductive layer to constitute the light emitting diode. Also, on the surface a ({11 2 0}) of a sapphire substrate, a buffer layer consisting of aluminum nitride is formed, onto which a gallium nitride group semiconductor is formed.
Inventors
- 👤 Katsuhide Manabe
- 👤 Nobuo Okazaki
- 👤 Isamu Akazaki
- 👤 Kazumasa Hiramatsu
- 👤 Hiroshi Amano
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-25 19:38
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/832; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2921; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3216; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3416
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
41 words
A gallium nitride group semiconductor light emitting diode having, a sapphire substrate including a surface a ({11 2 0}) as the main surface, and a buffer layer consisting of aluminum nitride (AlN) formed on the main surface of said sapphire substrate.
Claim 2
Dependent Claim
38 words
A gallium nitride group semiconductor having, a sapphire substrate including a surface a ({11 2 0}) as the main surface, and a buffer layer consisting of aluminum nitride (AlN) formed on the main surface of said sapphire substrate.
Claim 3
Dependent Claim
69 words
A process of vapor growth of a gallium nitride group semiconductor thin film using an organometallic compound gas, characterized in that a buffer layer consisting of aluminum nitride is grown on a surface a ({11 2 0}) of a sapphire substrate, and the vapor growth of the gallium nitride group semiconductor (Aℓ x Ga 1-x N; inclusive of x = 0) thin film is performed on the buffer layer.
References Cited (Backward Citations)
No citation records indexed.
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