EP0459770A2
Expired / Lapsed
EP
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Method for producing a semiconductor device with gate structure
Assignee: Canon Inc
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Filing: 1991-05-29
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Granted: —
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Expires: 2011-05-29
Abstract
Abstract A semiconductor device includes a field effect transistor provided with source and drain areas formed in the main surface side of a semiconductor substrate and a gate electrode provided on the main surface across a gate insulation film. The gate electrode comprises a first electrode portion having an electron donating surface; and a second electrode portion consisting of a metal formed on the electron donating surface.
Inventors
- 👤 Shigeyuki C/O Canon Kabushiki Kaisha Matsumoto
- 👤 Hiroshi C/O Canon Kabushiki Kaisha Yuzurihara
- 👤 Mamoru C/O Canon Kabushiki Kaisha Miyawaki
- 👤 Shunsuke C/O Canon Kabushiki Kaisha Inoue
- 👤 Jun C/O Canon Kabushiki Kaisha Nakayama
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 06:03
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D30/0221; H10D30/60; H10D30/601; H10D30/603; H10D30/605; H10D64/00; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10P; H10P30/00; H10P30/20; H10P30/22; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
67 words
A semiconductor device including a field effect transistor provided with source and drain areas formed in the main surface side of a semiconductor substrate and a gate electrode provided on said main surface across a gate insulation film, wherein said gate electrode comprises: a first electrode portion having an electron donating surface; and a second electrode portion consisting of a metal formed on said electron donating surface.
Claim 2
Dependent Claim
25 words
A semiconductor device according to claim 1, wherein at least either of said source and drain areas includes two areas of mutually different impurity concentrations.
Claim 3
Dependent Claim
29 words
A semiconductor device according to claim 1, wherein said electron donating surface is composed of a material of which principal component is same as that of said semiconductor substrate.
Claim 4
Dependent Claim
24 words
A semiconductor device according to claim 1, wherein said first electron portion is provided, on the upper face thereof, with an electron donating surface.
Claim 5
Dependent Claim
24 words
A semiconductor device according to claim 1, wherein said first electrode portion is provided, on the lateral faces thereof, with an electron donating surface.
Claim 6
Dependent Claim
24 words
A semiconductor device according to claim 1, wherein said metal material is selected from a group consisting of Aℓ, T, Cu, W and Mo.
Claim 7
Dependent Claim
17 words
A semiconductor device according to claim 1, constituting an N-MOS device for use in an inverter circuit.
Claim 8
Independent Claim
87 words
A method for producing a semiconductor device including a field effect transistor provided with source and drain areas formed in the main surface side of a semiconductor substrate and a gate electrode provided on said main surface across a gate insulation film, which comprises, after the formation of a first electrode portion having an electron donating surface for constituting said gate electrode, selectively depositing a metal on the electron donating surface of said first electrode portion, and introducing an impurity component utilizing said metal as a mask.
Claim 9
Dependent Claim
27 words
A method for producing a semiconductor device according to claim 8, wherein said metal is deposited by a CVD method utilizing alkylaluminum hydride gas and hydrogen gas.
Claim 10
Dependent Claim
40 words
A method for producing a semiconductor device according to claim 8, wherein said impurity component introduction utilizing said metal as a mask forms an area with a high impurity concentration in at least either of said source and drain areas.
Claim 11
Dependent Claim
33 words
A method for producing a semiconductor device according to claim 8, wherein said electron donating surface is composed of a material of which principal component is same as that of said semiconductor substrate.
Claim 12
Dependent Claim
30 words
A method for producing a semiconductor device according to claim 8, wherein said first electrode portion is provided, on the lateral and/or upper face thereof, with an electron donating surface.
Claim 13
Dependent Claim
28 words
A method for producing a semiconductor device according to claim 8, wherein said metal material is selected from a group consisting of Aℓ, Ti, Cu, W and Mo.
Claim 14
Dependent Claim
42 words
A method for producing a semiconductor device according to Claim 8, wherein said metal is deposited by a CVD method utilizing, as raw material gas, TiCℓ₄ and H₂, Cu(C₁₁H₁₉O₂)₂ and H₂, Cu(C₅H₇O₂)₂ and H₂, WF₆, W(C₂H₅)₃ and H₂, or Mo(CO)₆ and H₂.
Claim 15
Independent Claim
125 words
A method for producing a semiconductor device comprising steps of: forming a first layer having an electron donating surface, on a first insulation film provided on a semiconductor substrate; forming a second insulation film having an electron non-donating surface, on said first layer and patterning said second insulation film thereby exposing the electron donating surface of said first layer, depositing a second layer of a metal selectively on thus exposed electron donating surface of said first layer; doping said semiconductor substrate with an impurity of a high concentration, utilizing said second layer as a part of the mask; and removing said second layer and doping said semiconductor substrate with an impurity of a low concentration, utilizing said first layer as a part of the mask.
Claim 16
Dependent Claim
37 words
A method for producing a semiconductor device according to claim 15, wherein said second layer is formed by deposition of aluminum or an alloy principally composed of aluminum by a CVD method utilizing dimethylaluminum hydride and hydrogen.
Claim 17
Dependent Claim
49 words
A method for producing a semiconductor device according to claim 15, wherein said first layer is a polycrystalline silicon gate layer, and said steps of doping with impurities of high and low concentrations are respectively steps for forming a high concentration drain area and a low concentration drain area.
Claim 18
Dependent Claim
33 words
A method for producing a semiconductor device according to claim 15, wherein said electron donating surface is composed of a material of which principal component is same as that of said semiconductor substrate.
Claim 19
Dependent Claim
38 words
A method for producing a semiconductor device according to claim 15, wherein said first layer is provided, on the lateral faces thereof, with an electron donating surface to be exposed without being covered by said second insulation film.
Claim 20
Dependent Claim
49 words
A method for producing a semiconductor device according to claim 16, wherein said first layer is a polycrystlline silicon gate layer, and said steps of doping with impurities of high and low concentrations are respectively steps for forming a high concentration drain area and a low concentration drain area.
References Cited (Backward Citations)
No citation records indexed.
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