EP0459493A2
Expired / Lapsed
EP
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A semiconductor device using a lead frame and its manufacturing method
Assignee: Toshiba Corp
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Filing: 1991-05-31
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Granted: —
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Expires: 2011-05-31
Abstract
Abstract A plurality of electrode pads (14) are formed on a main surface of a semiconductor chip (11). The electrode pads (14) on the semiconductor chip (11) are electrically connected to the top end of the inner leads (19) through a metal plating layer (20). To connect the electrode pads (14) of the semiconductor chip (11) to the lead frame (53) formed of conductive material, there is provided a first connect section (54) where the lead frame (53) is electrically connected to an electrode (14) on the semiconductor chip (11) by a conductive adhesive, and a second connect section (55) where the lead frame (53) is electrically connected to the electode (14) on the semiconductor chip (11) by a metal plating to cover the surroundings of the first connect section (54).
Inventors
- 👤 Takao c/o Intellectual Property Div. Fujitsu
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 13:45
CPC Classifications
H; H10; H10W; H10W76/00; H10W76/10; H10W76/12; H10W90/00; H10W90/811; H10W70/00; H10W70/40; H10W70/421; H10W70/435; H10W70/464; H10W70/465; H10W70/479; H10W72/00; H10W72/01; H10W72/019; H10W72/30; H10W72/701; H10W72/90; H10W70/60; H10W70/67; H10W70/68; H10W70/682; H10W70/685; H10W72/071; H10W72/073; H10W72/07331; H10W72/075; H10W72/07551; H10W72/07554; H10W72/20; H10W72/29; H10W72/351; H10W72/353; H10W72/354; H10W72/50; H10W72/541; H10W72/547; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W72/59; H10W72/921; H10W72/923; H10W72/951; H10W72/952; H10W90/701; H10W90/751; H10W90/754; H10W99/00
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
54 words
A semiconductor device characterized by comprising: a lead frame (19; 53) formed of a conductive material; a semiconductor chip (11) having a plurality of electrodes (14) on its surface; and a connect section (20) where said lead frame is electrically connected to said plurality of electrodes on the semiconductor chip by a metal plating.
Claim 2
Dependent Claim
30 words
The semiconductor device according to claim 1, characterized in that said lead frame (19) is a TAB type in which a wiring pattern is formed on an insulating film (18).
Claim 3
Dependent Claim
21 words
The semiconductor device according to claim 1, characterized in that said lead frame (53) is formed by punching a metal film.
Claim 4
Dependent Claim
57 words
The semiconductor device according to claim 1, characterized in that said plurality of electrodes (14) formed on the surface of said semiconductor chip comprise an aluminum layer (12), a titan layer (31) formed on said aluminum layer (12), one layer (32) of a metal layer formed on said titan layer, a nickel layer, or a copper layer.
Claim 5
Dependent Claim
24 words
The semiconductor device according to claim 1, characterized in that said plurality of electrodes are arranged on said semiconductor chip in a zig-zag manner.
Claim 6
Dependent Claim
22 words
The semiconductor device according to claim 1, characterized in that said plurality of electrodes are arranged on said semiconductor chip at random.
Claim 7
Dependent Claim
61 words
A semiconductor device characterized by comprising: an insulating film (18); a wiring pattern (19) formed on said insulating film; a semiconductor chip (11) having a plurality of electrodes (14) on its surface; and a connect section (20) where the end surface of said wiring pattern is electrically connected to said plurality of electrodes on said semiconductor chip by a metal plating.
Claim 8
Dependent Claim
57 words
The semiconductor device according to claim 7, characterized in that said plurality of electrodes (14) formed on the surface of said semiconductor chip comprise an aluminum layer (12), a titan layer (31) formed on said aluminum layer (12), one layer (32) of a metal layer formed on said titan layer, a nickel layer, or a copper layer.
Claim 9
Dependent Claim
24 words
The semiconductor device according to claim 8, characterized in that said plurality of electrodes are arranged on said semiconductor chip in a zig-zag manner.
Claim 10
Dependent Claim
22 words
The semiconductor device according to claim 8, characterized in that said plurality of electrodes are arranged on said semiconductor chip at random.
Claim 11
Dependent Claim
60 words
A semiconductor device characterized by comprising: a semiconductor chip (11); a plurality of leads (17) electrically connected to said semiconductor chip; a wiring board (51) having a wiring pattern (52) on its surface; and a plurality of connect sections (20) where said plurality of leads are electrically connected to said wiring pattern on said wiring board by a metal plating.
Claim 12
Dependent Claim
82 words
A semiconductor device characterized by comprising: a lead frame (53) formed of a conductive material; a semiconductor chip (11) having an electrode (14) on its surface; a first connect section (54) where said lead frame is electrically connected to an electrode on said semiconductor chip by a conductive adhesive; and a second connect section (55) where said lead frame is electrically connected to said electrode on said semiconductor chip by a metal plating to cover the surroundings of said first connect section.
Claim 13
Independent Claim
83 words
A method of manufacturing a semiconductor device comprising the steps of: moving a lead frame (19) formed of a conductive material and an electrode (14) formed on a surface of a semiconductor chip (11) to be close to each other, and adhering said semiconductor chip to said lead frame; and immersing said lead frame and said semiconductor chip in an electrolytic plating solution, and forming a metal plating layer where said lead frame is electrically connected to said electrode on said semiconductor chip.
Claim 14
Dependent Claim
54 words
The method according to claim 13, characterized in that said lead frame (19) is formed of a plurality of lead electrodes (41), said plurality of lead electrodes (41) are electrically connected by a common electrode (42), and an electric potential is supplied to said common electrode (42) when said metal plating layer is formed.
Claim 15
Dependent Claim
63 words
A semiconductor device characterized by comprising: a package (61) formed of an insulating material and having a containing portion (64, 68) of a semiconductor chip; a conductive layer (69) formed around said containing portion of said case; a cap (70) formed on said containing portion of said package; and a metal plating layer (71) connecting said cap (70) to said conductive layer (69).
References Cited (Backward Citations)
No citation records indexed.
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