EP0457508A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Diamond semiconductor device
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1991-05-10
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Granted: —
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Expires: 2011-05-10
Abstract
Abstract A semiconductor device having active parts made from semiconductor diamond. The active parts comprise a high doped diamond layer (2) for supplying free carriers and a non-or low doped diamond layer (3) for giving the free carriers conductive region. The free carriers are transferred from the high doped diamond layer into the non-or low doped diamond layer by diffusion or electric field applied.
Inventors
- 👤 Hiromu C/O Itami Works Of Sumitomo Shiomi
- 👤 Yoshiki C/O Itami Works Of Sumitomo Nishibayashi
- 👤 Naoji C/O Itami Works Of Sumitomo Fujimori
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 09:28
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/60; H10D30/00; H10D30/01; H10D30/80; H10D30/87; H10D62/00; H10D62/80; H10D62/83; H10D62/8303; H10D8/01; H10D8/051; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2903; H10P14/2905; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3206; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3406; H10P14/3438; H10P14/3441; H10P14/3444
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
90 words
(1) A semiconductor device comprising a substrate, active layers deposited on the substrate, electrodes deposited on the active layers, characterized in that the active layers include a high doped diamond layer for supplying free carriers and a non or low doped diamond layer for giving the free carriers a conductive region being grown in contact with the high doped diamond layer, and a part of the free carriers are transferred from the high doped diamond layer to the non- or low doped diamond layer by diffusion or electric field applied.
Claim 2
Dependent Claim
26 words
(2) A semiconductor device as claimed in claim (1), wherein the impurity concentration of the high doped diamond layer is between 10¹⁸ cm⁻³ and 10²² cm⁻³.
Claim 3
Dependent Claim
26 words
(3) A semiconductor device as claimed in claim (1), wherein the impurity concentration of the non- or low doped diamond layer is less than 10¹⁷ cm⁻³.
Claim 4
Dependent Claim
56 words
(4) A semiconductor device comprising a monocrystalline diamond substrate, a p⁺-type diamond layer with 10¹⁸ cm⁻³ to 10²² cm⁻³ of dopant atoms deposited on the substrate, a non-doped diamond layer deposited on the p⁺-type diamond layer, an ohmic contact electrode deposited on the non-doped diamond layer and a Schottky contact electrode deposited on the non-doped diamond.
Claim 5
Dependent Claim
60 words
(5) A semiconductor device comprising a monocrystalline diamond substrate, a boron-doped diamond layer with 10¹⁸ cm⁻³ to 10²² cm⁻³ of boron atoms deposited on the substrate, a non-doped diamond layer deposited on the boron doped diamond layer, an ohmic contact titanium electrode deposited on the non-doped diamond layer and a Schottky contact aluminum electrode deposited on the non-doped diamond layer.
Claim 6
Dependent Claim
67 words
(6) A semiconductor device comprising a monocrystalline diamond substrate, a p⁺-type diamond layer with 10¹⁸ cm⁻³ to 10²² cm⁻³ of dopant atoms deposited on the substrate, a low doped diamond with less than 10¹⁷ cm⁻³ of impurity atoms deposited on the p⁺-type diamond layer, an ohmic contact electrode deposited on the low doped diamond layer and a Schottky contact electrode deposited on the low doped diamond layer.
Claim 7
Dependent Claim
71 words
(7) A semiconductor device comprising a monocrystalline diamond substrate, a high boron-doped diamond layer with 10¹⁸ cm⁻³ to 10²² cm⁻³ of boron atoms deposited on the substrate, a low boron-doped diamond with less than 10¹⁷ cm⁻³ of impurity atoms deposited on the high boron-doped diamond layer, an ohmic contact titanium electrode deposited on the low boron-doped diamond layer and a Schottky contact aluminum electrode deposited on the low boron-doped diamond layer.
Claim 8
Dependent Claim
78 words
(8) A semiconductor device comprising a monocrystalline silicon substrate, a high doped diamond layer with 10¹⁸ cm⁻³ to 10²² cm⁻³ of dopant atoms deposited on one side of the substrate, a non or low-doped diamond layer with less than 10¹⁷ cm⁻³ of impurity atoms deposited on the high doped diamond layer, a Schottky contact electrode deposited on the non- or low doped diamond layer and an ohmic contact electrode deposited on the other side of the silicon substrate.
Claim 9
Dependent Claim
74 words
(9) A semiconductor device comprising a monocrystalline diamond substrate, a high doped diamond layer with 10¹⁸ cm⁻³ to 10²² cm⁻³ of dopant atoms deposited on the substrate, a non-doped or low doped diamond layer with less than 10¹⁷ cm⁻³ of impurity atoms deposited on the high doped diamond layer, an ohmic contact source electrode, a Schottky contact gate electrode and an ohmic contact drain electrode deposited on the non- or low doped diamond layer.
Claim 10
Dependent Claim
85 words
(10) A semiconductor device comprising a substrate made of either Si, Ge, GaAs, GaN, InP, ZnSe, c-BN or SiC ; a high doped diamond layer with 10¹⁸ cm⁻³ to 10²² cm⁻³ of dopant atoms deposited on the substrate, a non-doped or low doped diamond layer with less than 10¹⁷ cm⁻³ of impurity atoms deposited on the high doped diamond layer, an ohmic contact source electrode, a Schottky contact gate electrode and an ohmic contact drain electrode deposited on the non- or low doped diamond layer.
References Cited (Backward Citations)
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