EP0455341B1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor contact via structure and method
Assignee: STMicroelectronics lnc USA
•
Filing: 1991-03-25
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Granted: 1996-05-29
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Expires: 2011-03-25
Abstract
No abstract record available.
Inventors
- 👤 Fu-Tai Liou
- 👤 Charles Ralph Spinner
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 05:46
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10W20/031; H10W20/032; H10W20/033; H10W20/047; H10W20/049; H10W20/056; H10W20/057; H10W20/062; H10W20/40; H10W20/41; H10W20/425; Y; Y10; Y10S; Y10S438/00; Y10S438/97
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
131 words
A method of forming a contact in an integrated circuit device, comprising the steps of: forming an opening (26) in an insulating layer (24); forming a region of a first metal (32) filling the opening and etching back said first metal until the insulating layer (24) is exposed to provide a planar surface over the opening; forming a layer (34) of a second metal over the opening and the insulating layer; forming a second layer (36) of the first metal over the second metal layer (34); etching the second layer (36) of a first metal to define a signal line, wherein the first metal is etched selectively over the second metal; and etching the layer of second metal (34) selectively over the first metal to complete definition of the signal line.
Claim 2
Dependent Claim
69 words
The method of Claim 1, wherein said step of forming a region of first metal (32) includes the steps of: forming a barrier metal layer (28) on the sides and bottom of the opening; forming an aluminium layer over the surface of the device, wherein an aluminium/refractory metal alloy is formed within the opening; and etching the aluminium and refractory metal layers to form a plug within the opening.
Claim 3
Dependent Claim
13 words
The method of Claim 2, wherein the barrier metal layer (28) includes titanium.
Claim 4
Dependent Claim
14 words
The method of Claim 3, wherein the barrier metal layer (28) comprises titanium nitride.
Claim 5
Dependent Claim
14 words
The method of Claim 1, wherein the second metal (34) is a refractory metal.
Claim 6
Dependent Claim
12 words
The method of Claim 5, wherein the second metal (34) is tungsten.
Claim 7
Dependent Claim
12 words
The method of Claim 6, wherein the first metal (32) comprises aluminium.
Claim 8
Dependent Claim
12 words
The method of Claim 1, wherein the first metal (32) comprises aluminium.
Claim 9
Dependent Claim
25 words
The method of Claim 1, wherein the defined signal line has a width large enough to cover the entire opening (26) in the insulating layer.
Claim 10
Dependent Claim
27 words
The method of Claim 9, wherein the defined signal line has a width approximately the same as a dimension of the opening (26) in the insulating layer.
Claim 11
Dependent Claim
25 words
The method of Claim 1, wherein the defined signal line has a width less than a dimension of the opening (26) in the insulating layer.
Claim 12
Dependent Claim
23 words
The method of Claim 1, wherein the region of the first metal (32) filling the opening (26) contacts an underlying conductive region (22).
Claim 13
Dependent Claim
19 words
The method of Claim 12, wherein the underlying conductive region (22) is in a substrate (20) of the device.
Claim 14
Dependent Claim
107 words
A contact structure for integrated circuit devices, comprising: an opening (26) in an insulating layer, said insulating layer having an upper surface; a plug of a first metal (32) filling said opening, said plug contacting an underlying conductive region (22), said plug further having a planar upper surface; a layer of a second metal (34) covering at least a portion of the plug upper surface; and a layer of a third metal (36) overlying said second metal layer (34), wherein said second (34) and third (36) metal layers form a signal line, and wherein said second metal is selectively etchable over said first and third metal layers.
Claim 15
Dependent Claim
20 words
The structure of Claim 14, wherein said first (32) and third (36) metal layers are formed from the same metal.
Claim 16
Dependent Claim
16 words
The structure of Claim 15, wherein said first (32) and third (36) metal layers comprise aluminium.
Claim 17
Dependent Claim
15 words
The structure of Claim 14, wherein said second metal layer (34) comprises a refractory metal.
Claim 18
Dependent Claim
13 words
The structure of Claim 17, wherein said second metal layer (34) comprises tungsten.
Claim 19
Dependent Claim
42 words
The structure of Claim 14, wherein said plug of first metal (32) comprises: a layer of barrier metal (28) covering the underlying conducting region and sidewalls of said opening; and a region containing said first metal filling the remainder of said opening.
Claim 20
Dependent Claim
24 words
The structure of Claim 19, wherein said barrier metal layer (28) includes titanium, and said first metal comprises an alloy of aluminium and titanium.
Claim 21
Dependent Claim
14 words
The structure of Claim 20, wherein said barrier metal layer (28) comprises titanium nitride.
Claim 22
Dependent Claim
19 words
The structure of Claim 14, wherein the signal line has a width less than a dimension of said opening.
References Cited (Backward Citations)
No citation records indexed.
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