EP0449000A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Layer structure having contact hole for fin-shaped capacitors in DRAMS and method of producing the same
Assignee: Fujitsu Ltd
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Filing: 1991-03-06
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Granted: —
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Expires: 2011-03-06
Abstract
Abstract A method of forming a structure having a contact hole (10) includes the steps of (a) forming an insulating layer (3) on a first conductive layer (2), (b) forming a second conductive layer (4) on the insulating layer, (c) forming an opening (6) in the second conductive layer, (d) forming a conductive sidewall (8) around an inner wall of the first conductive layer defining the opening, (e) selectively etching the insulating layer in a state where the second conductive layer and the conductive sidewall function as etching masks, so that the contact hole having a width smaller than that of the opening and defined by the conductive sidewall is formed, and the first conductive layer is exposed through the contact hole, and (f) removing the second conductive layer and the conductive sidewall by using a photoresist (11). This structure is employed to produce multi-finned stacked storage capacitor DRAMs.
Inventors
- 👤 Taji Ema
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 19:00
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/30; H10B12/31; H10B12/318; H10B12/48; H10B12/488; H10P; H10P76/00; H10P76/40; H10P76/405; H10P76/408; H10P76/4085; H10W20/031; H10W20/032; H10W20/033; H10W20/046; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; Y; Y10; Y10S; Y10S148/00; Y10S148/014
Claims Analysis
Total Claims: 73
Claim 1
Independent Claim
135 words
A method of forming a structure having a contact hole (10) characterized by comprising the steps of: (a) forming an insulating layer (3) on a first conductive layer (2); (b) forming a second conductive layer (4) on said insulating layer; (c) forming an opening (6) in said second conductive layer; (d) forming a conductive sidewall (8) around an inner wall of said first conductive layer defining said opening; (e) selectively etching said insulating layer in a state where said second conductive layer and said conductive sidewall function as etching masks, so that said contact hole (10) having a width smaller than that of said opening and defined by said conductive sidewall is formed, and said first conductive layer is exposed through said contact hole; and (f) removing said second conductive layer and said conductive sidewall.
Claim 2
Dependent Claim
84 words
A method as claimed in claim 1, characterized in that said method comprises, between said step (e) and said step (f), the steps of: (e-1) forming an etching resist (11) on said first conductive layer exposed through said contact hole, said second conductive layer and said conductive sidewall; and (e-2) removing only a part of said etching resist on said second conductive layer and said conductive sidewall so that said first conductive layer exposed through said contact hole is protected by said etching resist.
Claim 3
Dependent Claim
47 words
A method as claimed in claim 2, characterized in that said step (e-2) comprises: projecting light onto said etching resist (11); and developing said etching resist so that a part of said etching resist is left on said first conductive layer (2) exposed through said contact hole.
Claim 4
Dependent Claim
61 words
A method as claimed in claim 1, characterized in that: said method further comprises the step of forming an etching stopper layer (13) on said second conductive layer; and said etching stopper layer protects said second conductive layer during said step (d), so that the thickness of said second conductive layer can be prevented from being reduced during said step (d).
Claim 5
Dependent Claim
40 words
A method as claimed in claim 1, characterized in that said method further comprises the step of forming a third conductive layer (18) on said insulating layer and in contact with said first conductive layer exposed through said contact hole.
Claim 6
Dependent Claim
17 words
A method as claimed in claim 1, characterized in that said first conductive layer (2) comprises polysilicon.
Claim 7
Dependent Claim
24 words
A method as claimed in claim 1, characterized in that: said second conductive layer (4) comprises polysilicon; and said conductive sidewall (8) comprises polysilicon.
Claim 8
Dependent Claim
48 words
A method as claimed in claim 1, characterized in that said method further comprises the step of heating said insulating layer (3) so that said insulating layer is reflown and an edge portion of said insulating layer defining an upper portion of said contact hole is gradually curved.
Claim 9
Independent Claim
183 words
A method of forming a structure having a contact hole (10) characterized by comprising the steps of: (a) forming an insulating layer (3) on a first conductive layer (2); (b) forming a second conductive layer (4) on said insulating layer; (c) forming an opening (6) in said second conductive layer; (d) forming a conductive sidewall (8) around an inner wall of said first conductive layer defining said opening; (e) selectively etching said insulating layer in a state where said second conductive layer and said conductive sidewall function as etching masks, so that said contact hole (10) having a width smaller than that of said opening and defined by said conductive sidewall is formed om said insulating layer and said first conductive layer is exposed through said contact hole; (f) forming a barrier layer (16) on said second conductive layer, said conductive sidewall and said first conductive layer exposed through said contact hole; and (g) forming a third conductive layer (17) on said barrier layer, said barrier layer preventing said third conductive layer from reacting with said second conductive layer and said conductive sidewall.
Claim 10
Dependent Claim
33 words
A method as claimed in claim 9, characterized in that: said barrier layer comprises a bilayer structure having a titanium layer and a titanium nitride layer; and said third conductive layer comprises aluminum.
Claim 11
Dependent Claim
23 words
A method as claimed in claim 9, characterized in that: said second conductive layer comprises polysilicon; and said third conductive layer comprises polysilicon.
Claim 12
Independent Claim
169 words
A method of forming a structure having a contact hole (10) characterized by comprising the steps of: (a) forming an insulating layer (3) on a first conductive layer (2); (b) forming a second conductive layer (4) on said insulating layer; (c) forming an opening (6) in said second conductive layer; (d) forming a conductive sidewall (8) around an inner wall of said first conductive layer defining said opening; (e) selectively etching said insulating layer in a state where said second conductive layer and said conductive sidewall function as etching masks, so that said contact hole (10) having a width smaller than that of said opening and defined by said conductive sidewall is formed, and said first conductive layer is exposed through said contact hole; and (f) forming a third conductive layer (18) on said second conductive layer, said conductive sidewall and said member exposed through said contact hole, characterized in that: said second conductive layer comprises polysilicon; said conductive sidewall comprises polysilicon; and said third conductive layer comprises tungsten.
Claim 13
Dependent Claim
22 words
A method as claimed in claim 12, characterized in that said contact hole is filled with tungsten of said third conductive layer.
Claim 14
Independent Claim
156 words
A method of forming a structure having a contact hole (10) characterized by comprising the steps of: (a) forming an insulating layer (3) on a first conductive layer (2); (b) forming a second conductive layer (4) on said insulating layer; (c) forming a first opening (6) in said second conductive layer; (d) selectively growing a third conductive layer (14) on said second conductive layer and an inner wall of said second conductive layer defining said first opening, so that a second opening (15) defined by said third conductive layer and having a width smaller than that of said first opening is formed; and (e) selectively etching said insulating layer in a state where said third conductive layer functions as an etching mask, so that said contact hole (10) having a width substantially identical to said second opening defined by said third conductive layer is formed, and said first conductive layer is exposed through said contact hole.
Claim 15
Dependent Claim
25 words
A method as claimed in claim 14, characterized in that: said second conductive layer (4) comprises polysilicon; and said third conductive layer (14) comprises polysilicon.
Claim 16
Dependent Claim
63 words
A method as claimed in claim 14, characterized in that said method further comprises the steps of: forming a barrier layer (16) on said third conductive layer and said first conductive layer exposed through said contact hole; and forming a fourth conductive layer (17) on said barrier layer, said barrier layer preventing said third conductive layer from reacting with said fourth conductive layer.
Claim 17
Dependent Claim
156 words
A layer structure characterized by comprising: a first conductive layer (2); an insulating layer (3) formed on said first conductive layer and having a contact hole (10), said first conductive layer being exposed through said contact hole; a second conductive layer (4) formed on said insulating layer and having an opening (6) having a width larger than that of said contact hole; a conductive sidewall (8) formed on said insulating layer exposed through said opening and formed around an inner wall of said second conductive layer defining said opening, said conductive sidewall having a width substantially equal to that of said contact hole; a barrier layer (16) formed on said second conductive layer, said conductive sidewall and said first conductive layer exposed through said contact hole; and a third conductive layer (17) formed on said barrier layer, said barrier layer preventing said third conductive layer from reacting with said second conductive layer and said conductive sidewall.
Claim 18
Dependent Claim
35 words
A layer structure as claimed in claim 17, characterized in that: said third conductive layer (17) comprises aluminum; said first and second conductive layers (2, 4) comprise polysilicon; and said conductive sidewall (8) comprises polysilicon.
Claim 19
Dependent Claim
28 words
A layer structure as claimed in claim 17, characterized in that said barrier layer (16) comprises a bilayer structure having a titanium layer and a titanium nitride layer.
Claim 20
Dependent Claim
178 words
A layer structure characterized by comprising: a first conductive layer (2); an insulating layer (3) formed on said first conductive layer and having a contact hole (10), said first conductive layer being exposed through said contact hole; a second conductive layer (4) formed on said insulating layer and having a first opening (6) having a width larger than that of said contact hole; a third conductive layer (14) formed on said insulating layer exposed through said first opening and said second conductive layer and formed around an inner wall of said second conductive layer defining said first opening, said third conductive layer defining a second opening (15) having a width substantially equal to that of said contact hole, said second opening being continuously connected to said contact hole; a barrier layer (16) formed on said third conductive layer and said first conductive layer exposed through said contact hole; and a fourth conductive layer (17) formed on said barrier layer, said barrier layer preventing said fourth conductive layer from reacting with said third conductive layer and said conductive sidewall.
Claim 21
Dependent Claim
31 words
A layer structure as claimed in claim 20, characterized in that: said fourth conductive layer (17) comprises aluminum; and said first, second and third conductive layers (2, 4, 14) comprise polysilicon.
Claim 22
Dependent Claim
28 words
A layer structure as claimed in claim 20, characterized in that said barrier layer (16) comprises a bilayer structure having a titanium layer and a titanium nitride layer.
Claim 23
Dependent Claim
151 words
A layer structure characterized by comprising: a first conductive layer (2); an insulating layer (3) formed on said first conductive layer and having a contact hole (10), said first conductive layer being exposed through said contact hole; a second conductive layer (4) formed on said insulating layer and having an opening (6) having a width larger than that of said contact hole; a conductive sidewall (8) formed on said insulating layer exposed through said opening and formed around an inner wall of said second conductive layer defining said opening, said conductive sidewall having a width substantially equal to that of said contact hole; and a third conductive layer (18) formed on said second conductive layer, said conductive sidewall and said first conductive layer exposed through said contact hole, characterized in that said third conductive layer comprises a material which causes no reaction with said second conductive layer and said conductive sidewall.
Claim 24
Dependent Claim
32 words
A layer structure as claimed in claim 23, characterized in that: said third conductive layer (18) comprises tungsten; said second conductive layer (4) comprises polysilicon; and said conductive sidewall (18) comprises polysilicon.
Claim 25
Dependent Claim
259 words
A dynamic random access memory characterized by comprising: a semiconductor substrate (21) having a first diffusion region (25) and a second diffusion region (24) of a transfer transistor; a first insulating layer (23, 26, 27) having a first contact hole (25A) exposing said first diffusion region, and a second contact hole (24A) exposing said second diffusion region; a word line (WL) covered by said first insulating layer; a stacked capacitor (29, 36, 37) which is in contact with said first diffusion region through said first contact hole; a bit line (BL) which is in contact with said second diffusion region through said second contact hole; and a second insulating layer (38) covering said stacked capacitor, characterized in that: said stacked capacitor comprises a storage electrode (29, 40), a dielectric film (36) and a cell plate (37); said storage electrode which is in contact with said first diffusion region through said first contact hole has a first fin (29₁, 40₁) having a first portion (29'), a second portion (32) and a third portion (29''); said first portion has a first opening (29A) having a width greater than that of said first contact hole; said second portion serving as a sidewall is formed around an inner wall of said first portion defining said first opening, so that a second opening (32A) has a width substantially identical to that of said first contact hole; and said third portion extends on said first and second portions, substantially vertically extends in said first contact hole, and is in contact with said first diffusion region.
Claim 26
Dependent Claim
60 words
A dynamic random access memory as claimed in claim 25, characterized in that: said storage electrode comprises a second fin (29₂, 40₂) having a contact area in which said second fin is in contact with said first fin; said contact area is wider than said first contact hole; and said first and second fins are spaced apart from each other.
Claim 27
Dependent Claim
27 words
A dynamic random access memory as claimed in claim 25, characterized in that said first fin (29₁, 40₁) is spaced apart from said first insulating layer (27).
Claim 28
Dependent Claim
30 words
A dynamic random access memory as claimed in claim 25, characterized in that said first fin (29₁, 40₁) of said storage electrode is formed on said first insulating layer (27).
Claim 29
Dependent Claim
30 words
A dynamic random access memory as claimed in claim 26, characterized in that said first fin (29₁, 40₁) of said storage electrode is thicker than said third portion (29'') thereof.
Claim 30
Dependent Claim
33 words
A dynamic random access memory as claimed in claim 25, characterized in that said storage electrode having said first fin (29₁) having said first, second and third portions (29', 32, 29'') comprises polysilicon.
Claim 31
Dependent Claim
220 words
A dynamic random access memory characterized by comprising: a semiconductor substrate (21) having a first diffusion region (25) and a second diffusion region (24) of a transfer transistor; a first insulating layer (23, 26, 27) having a first contact hole (28A) exposing said first diffusion region, and a second contact hole (24A) exposing said second diffusion region; a word line (WL) covered by said first insulating layer; a stacked capacitor (29, 36, 37) which is in contact with said first diffusion region through said first contact hole; a bit line (BL) which is in contact with said second diffusion region through said second contact hole; and a second insulating layer (38) covering said stacked capacitor, characterized in that: said stacked capacitor comprises a storage electrode (50), a dielectric film (36) and a cell plate (37); and said storage electrode which is in contact with said first diffusion region through said first contact hole has a plurality of first fin-shaped portions (29', 46') located outside of said first contact hole, a second portion (47, 47a, 47b) connecting said first fin-shaped portions to each other, and a third portion (46'') extending on an uppermost one (46') of said first fin-shaped portions and said second portion, substantially vertically extending in said first contact hole, and being in contact with said first diffusion region.
Claim 32
Dependent Claim
52 words
A dynamic random access memory as claimed in claim 31, characterized in that: said second portion (47) of said storage electrode is spaced apart from said first insulating layer (27); and a lowermost one (29') of said first fin-shaped portions of said storage electrode is spaced apart from said first insulating layer.
Claim 33
Dependent Claim
53 words
A dynamic random access memory as claimed in claim 31, characterized in that: said second portion (47a, 47b) of said storage electrode is in contact with said first insulating layer (27); and a lowermost one (29') of said first fin-shaped portions of said storage electrode is spaced apart from said first insulating layer.
Claim 34
Dependent Claim
29 words
A dynamic random access memory as claimed in claim 33, characterized in that said storage electrode (50) has a substantially flat surface which extends above said word line (WL).
Claim 35
Dependent Claim
21 words
A dynamic random access memory as claimed in claim 31, characterized in that said storage electrode (50, 36, 37) comprises polysilicon.
Claim 36
Dependent Claim
217 words
A dynamic random access memory characterized by comprising: a semiconductor substrate (21) having a first diffusion region (25) and a second diffusion region (24) of a transfer transistor; a first insulating layer (23, 26, 62) having a first contact hole (62A) exposing said first diffusion region, and a second contact hole (24A) exposing said second diffusion region; a word line (WL) covered by said first insulating layer; a stacked capacitor (90, 36, 37) which is in contact with said first diffusion region through said first contact hole; a bit line (BL) which is in contact with said second diffusion region through said second contact hole; and a second insulating layer (38) covering said stacked capacitor, characterized in that: said stacked capacitor comprises a storage electrode (90), a dielectric film (36) and a cell plate (37); and said storage electrode which is in contact with said first diffusion region through said first contact hole has a plurality of first fin-shaped portions (64 (90₁), 66 (90₂), 68) located outside of said first contact hole, and a second portion (75) connecting said first fin-shaped portions to each other, and extending on an uppermost one (68) of said first fin-shaped portions, said second portion substantially vertically extending in said first contact hole, and being in contact with said first diffusion region.
Claim 37
Dependent Claim
32 words
A dynamic random access memory as claimed in claim 36, characterized in that a lowermost one (64, 90₁) of said first fin-shaped portions is spaced apart from said first insulating layer (62).
Claim 38
Dependent Claim
32 words
A dynamic random access memory device as claimed in claim 36, characterized in that a lowermost one (64, 90₁) of said first fin-shaped portions is in contact with said first insulating layer.
Claim 39
Dependent Claim
19 words
A dynamic random access memory as claimed in claim 36, characterized in that said storage electrode (90) comprises polysilicon.
Claim 40
Dependent Claim
182 words
A fin-shaped capacitor including: a storage electrode (29, 40) having an exposed surface; a dielectric film (36) formed around said exposed surface of said storage electrode; and a cell plate (37) covering said storage electrode surrounded by said dielectric film, characterized in that: said storage electrode is in contact with a diffusion region (25) of a semiconductor substrate (21) through a contact hole (25A) formed in an insulating layer (23, 26, 27) formed on said semiconductor substrate; said storage electrode has a first fin (29₁, 29₂) having a first portion (29'), a second portion (32) and a third portion (29''); said first portion has a first opening (29A) having a width greater than that of said contact hole; said second portion is formed around an inner wall of said first portion defining said first opening, so that a second opening (32A) has a width substantially identical to that of said contact hole; and said third portion extends on said first and second portions, substantially vertically extends in said contact hole, and is in contact with said diffusion region in said semiconductor substrate.
Claim 41
Dependent Claim
59 words
A fin-shaped capacitor as claimed in claim 40, characterized in that: said storage electrode comprises a second fin (29₂, 40₂) having a contact area in which said second fin is in contact with said first fin (29₁, 40₁); said contact area is wider than said contact hole; and said first and second fins are spaced apart from each other.
Claim 42
Dependent Claim
24 words
A fin-shaped capacitor as claimed in claim 40, characterized in that said first fin (29₁, 40₁) is spaced apart from said insulating layer (27).
Claim 43
Dependent Claim
27 words
A fin-shaped capacitor as claimed in claim 40, characterized in that said first fin (29₁, 40₁) of said storage electrode is formed on said insulating layer (27).
Claim 44
Dependent Claim
28 words
A fin-shaped capacitor as claimed in claim 41, characterized in that said first fin (29₁, 40₁) of said storage electrode is thicker than said third portion (29'') thereof.
Claim 45
Dependent Claim
29 words
A fin-shaped capacitor as claimed in claim 40, characterized in that said storage electrode having said first fin (29₁, 40₁) having said first, second and third portions comprises polysilicon.
Claim 46
Dependent Claim
144 words
A fin-shaped capacitor including: a storage electrode (50) having an exposed surface; a dielectric film (36) formed around said exposed surface of said storage electrode; and a cell plate (37) covering said storage electrode surrounded by said storage electrde, characterized in that: said storage electrode is in contact with a diffusion region (25) of a semiconductor substrate (21) through a contact hole (28A) formed in an insulating layer formed on said semiconductor substrate; said storage electrode has a plurality of first fin-shaped portions (29', 46') located outside of said contact hole, a second portion (47, 47a, 47b) connecting said first fin-shaped portions to each other, and a third portion (46'') extending on an uppermost one (46') of said first fin-shaped portions and said second portion, substantially vertically extending in said contact hole, and being in contact with said diffusion region of said semiconductor substrate.
Claim 47
Dependent Claim
48 words
A fin-shaped capacitor as claimed in claim 46, characterized in that: said second portion (47) of said storage electrode is spaced apart from said insulating layer (27); and a lowermost one (29') of said first fin-shaped portions of said storage electrode is spaced apart from said insulating layer.
Claim 48
Dependent Claim
49 words
A fin-shaped capacitor as claimed in claim 46, characterized in that: said second portion (47a, 47b) of said storage electrode is in contact with said insulating layer (27); and a lowermost one (29') of said first fin-shaped portions of said storage electrode is spaced apart from said insulating layer.
Claim 49
Dependent Claim
32 words
A fin-shaped capacitor as claimed in claim 48, characterized in that said insulating layer (27) has a substantially flat surface on which said second portion (47b) of said storage electrode is formed.
Claim 50
Dependent Claim
19 words
A fin-shaped capacitor as claimed in claim 46, characterized in that said storage electrode (50, 36, 37) comprises polysilicon.
Claim 51
Dependent Claim
145 words
A fin-shaped capacitor including: a storage electrode (90, 36, 37) having an exposed surface; a dielectric film (36) formed around said exposed surface of said storage electrode; and a cell plate (37) covering said storage electrode surrounded by said storage electrode, characterized in that: said storage electrode is in contact with a diffusion region (25) of a semiconductor substrate (21) through a contact hole (62A) formed in an insulating layer (23, 26, 62) formed on said semiconductor substrate; said storage electrode has a plurality of first fin-shaped portions (64 (90₁), 66 (90₂), 68) located outside of said contact hole, and a second portion (75) connecting said fin-shaped portions to each other, and extending on an uppermost one (68) of said first fin-shaped portions, said second portion substantially vertically extending in said contact hole, and being in contact with said diffusion region in said semiconductor substrate.
Claim 52
Dependent Claim
29 words
A fin-shaped capacitor as claimed in claim 51, characterized in that a lowermost one (64, 90₁) of said first fin-shaped portions is spaced apart from said insulating layer (62).
Claim 53
Dependent Claim
29 words
A fin-shaped capacitor device as claimed in claim 51, characterized in that a lowermost one (64, 90₁) of said first fin-shaped portions is in contact with said insulating layer.
Claim 54
Dependent Claim
17 words
A fin-shaped capacitor as claimed in claim 51, characterized in that said storage electrode (90) comprises polysilicon.
Claim 55
Independent Claim
218 words
A method of producing a fin-shaped capacitor in a dynamic random access memory, characterized by comprising the steps of: (a) forming an insulating layer (23, 26, 27, 28) on a semiconductor substrate having a diffusion region (25); (b) forming a first conductive layer (29') having a first opening (29A) on said insulating layer; (c) forming a conductive sidewall (32) around an inner wall of said first conductive layer defining said first opening, said conductive sidewall defining a second opening (32A) having a width smaller than that of said first opening; (d) selectively etching said insulating layer in a state where said first conductive layer and said conductive sidewall function as etching masks, so that said diffusion region is exposed through a contact hole (25A) formed in said insulating layer and having a width substantially identical to that of said second opening; (e) forming a second conductive layer (29'') on said first conductive layer, said conductive sidewall and said diffusion region exposed through said contact hole; (f) patterning said first conductive layer and said second conductive layer into a shape of a storage electrode (29) of said fin-shaped capacitor; (g) forming a dielectric film (36) around an exposed surface of said storage electrode; and (h) forming a cell plate (37) around said storage electrode covered by said dielectric film.
Claim 56
Dependent Claim
81 words
A method as claimed in claim 55, characterized in that said step (a) comprised the steps of: forming a first insulating layer (23, 26, 27) directly on said semiconductor substrate; and forming a second insulating layer (28) on said semiconductor substrate, said insulating layer having said first arid second insulating layers, and characterized in that said method further comprises the step of isotropically etching said second insulating layer, so that said storage electrode is spaced apart from said first insulating layer.
Claim 57
Independent Claim
287 words
A method of producing a fin-shaped capacitor in a dynamic random access memory, characterized by comprising the steps of: (a) forming a first insulating layer (23, 26, 27, 28) on a semiconductor substrate having a diffusion region (25); (b) forming a first conductive layer (29') having a first opening (29A) on said first insulating layer; (c) forming a conductive sidewall (32) around an inner wall of said first conductive layer defining said first opening, said conductive sidewall defining a second opening (32A) having a width smaller than that of said first opening; (d) selectively etching said first insulating layer in a state where said first conductive layer and said conductive sidewall function as etching masks, so that said diffusion region is exposed through a contact hole (25A) formed in said first insulating layer and having a width substantially identical to that of said second opening; (e) forming a second conductive layer (29'') on said first conductive layer, said conductive sidewall and said diffusion region exposed through said contact hole; (f) forming, on said second conductive layer, a second insulating layer (33) having a third opening (33A) having a width substantially identical to that of said first opening; (g) forming a third conductive layer (29₂) on said second insulating layer and said second conductive layer through said third opening; (h) patterning said first and second conductive layers and said second insulating layer into a shape of a storage electrode of said fin-shaped capacitor; (i) isotropically etching said second insulating layer so that said second insulating layer is removed; (j) forming a dielectric film (36) around an exposed surface of said storage electrode; and (k) forming a cell plate (37) around said storage electrode covered by said dielectric film.
Claim 58
Dependent Claim
108 words
A method as claimed in claim 57, characterized in that said step (a) comprises the steps of: forming a third insulating layer (23, 26) directly on said semiconductor substrate; and forming a fourth insulating layer (49) on said third insulating layer; forming a fifth insulating layer (27) on said fourth insulating layer, said first insulating layer having said third and fourth insulating layers, and characterized in that: said fifth insulating layer is formed of a material identical to that of said third insulating material; and said fifth insulating layer is removed during said step (i), so that said storage electrode is spaced apart from said fourth insulating layer.
Claim 59
Dependent Claim
115 words
A method as claimed in claim 57, characterized in that: said step (h) comprises: forming a third insulating layer (34) having a fourth opening (34A) on said third conductive layer (33), said fourth opening being located at a position different from that of said first opening (25A); forming an insulating sidewall (35) around an inner surface of said fourth insulating layer defining said fourth opening, said insulating sidewall defining a fifth opening (35A) having a width smaller than that of said fourth opening; and etching said first, second and third conductive layers and said second and third insulating layers in a state where said fourth insulating layer and said insulating sidewall function as etching masks.
Claim 60
Independent Claim
334 words
A method of producing a fin-shaped capacitor in a dynamic random access memory, characterized by comprising the steps of: (a) forming a first insulating layer (23, 26, 27) on a semiconductor substrate (21) having a diffusion region (25); (b) forming a plurality of stacked-layer structures (28, 29'; 45, 46'), a lowermost one (28, 29') of said stacked-layer structures being formed on said first insulating layer, each of said stacked-layer structures having a spacer layer (28, 45) and a first conductive layer (29, 46'); (c) forming a first opening (29A) in said stacked-layer structures except said spacer layer (28) of said lowermost one of said stacked-layer structures; (d) forming a conductive sidewall (47) around an inner wall of said stacked-layer structures defining said first opening, said conductive sidewall defining a second opening (46A) having a width smaller than that of said first opening; (e) selectively etching said spacer layer (28) of the lowermost one of said stacked-layer structures and said first insulating layer (23, 26, 27) in a state where said first conductive layer (46') of an uppermost one of said stacked layer structures and said conductive sidewall function as masks, so that said diffusion region is exposed through a contact hole (28A) formed in said spacer layer of the lowermost one of said stacked-layer structures and said first insulating layer; (f) forming a second conductive layer (46'') on said first conductive layer (46') of the uppermost one of said stacked-layer structures, said conductive sidewall and said diffusion region exposed through said contact hole; (g) patterning said second conductive layer and said stacked-layer structures except said spacer layer of the lowermost one of said stacked-layer structures into a shape of a storage electrode (50) of said fin-shaped capacitor; (h) isotropically etching said spacer layer (28, 45) of each of said stacked-layer structures so that said spacer layer is removed; (i) forming a dielectric film (36) around said storage electrode; and (j) forming a cell plate (37) around said storage electrode covered by said dielectric film.
Claim 61
Dependent Claim
53 words
A method as claimed in claim 60, characterized in that: said method further comprises, between said steps (b) and (c), the step of forming a second insulating layer (48) on said first conductive layer of the uppermost one of said stacked-layer structures; and said second insulating layer is removed during said step (e).
Claim 62
Dependent Claim
88 words
A method as claimed in claim 60, characterized in that said step (a) comprises the steps of: forming a second insulating layer (23, 26) on said semiconductor substrate; forming a third insulating layer (49) on said second insulating layer; heating said third insulating layer so that said third insulating layer has a substantially flat surface; and forming a fourth insulating layer (27) on said substantially flat surface of said third insulating layer, and characterized in that: said second, third and fourth insulating layers form said first insulating layer.
Claim 63
Dependent Claim
27 words
A method as claimed in claim 60, characterized in that: said first conductive layer (29', 46') comprises polysilicon; and said spacer layer (28, 45) comprises silicon oxide.
Claim 64
Dependent Claim
39 words
A method as claimed in claim 62, characterized in that: said second and fourth insulating layers (23, 26, 27) comprises silicon oxide; and said third insulating layer (49) comprises one of a spin-on-glass layer and a phosphosilicate glass layer.
Claim 65
Independent Claim
284 words
A method of producing a fin-shaped capacitor in a dynamic random access memory, characterized by comprising the steps of: (a) forming a first insulating layer (23, 26, 27) on a semiconductor substrate having a diffusion region; (b) forming a plurality of stacked-layer structures (28, 29', 45, 46') , a lowermost one (28, 29') of said stacked-layer structures being formed on said first insulating layer, each of said stacked-layer structures having a spacer layer (28, 45) and a first conductive layer (29', 46'); (c) forming a first opening (29A) in said stacked-layer structures; (d) forming a conductive sidewall (47a, 47b) around an inner wall of said stacked-layer structures defining said first opening, said conductive sidewall defining a second opening (46A) having a width smaller than that of said first opening; (e) selectively etching said first insulating layer (23, 26, 27) in a state where said first conductive layer (46') of an uppermost one of said stacked layer structures and said conductive sidewall function as masks, so that said diffusion region is exposed through a contact hole (27A) formed in said first insulating layer; (f) forming a second conductive layer (46'') on said first conductive layer (46') of the uppermost one of said stacked-layer structures, said conductive sidewall and said diffusion region exposed through said contact hole; (g) patterning said second conductive layer and said stacked-layer structures into a shape of a storage electrode (50) of said fin-shaped capacitor; (h) isotropically etching said spacer layer (28, 45) of each of said stacked-layer structures so that said spacer layer is removed; (i) forming a dielectric film (36) around said storage electrode; and (j) forming a cell plate (37) around said storage electrode covered by said dielectric film.
Claim 66
Dependent Claim
53 words
A method as claimed in claim 65, characterized in that: said method further comprises, between said steps (b) and (c), the step of forming a second insulating layer (48) on said first conductive layer of the uppermost one of said stacked-layer structures; and said second insulating layer is removed during said step (e).
Claim 67
Dependent Claim
87 words
A method as claimed in claim 65, characterized in that said step (a) comprises the steps of: forming a second insulating layer (23, 26) on said semiconductor substrate; forming a third insulating layer (27) on said second insulating layer; heating said third insulating layer so that said third insulating layer has a substantially flat surface; and forming a fourth insulating layer on said substantially flat surface of said third insulating layer, and characterized in that: said second, third and fourth insulating layers form said first insulating layer.
Claim 68
Dependent Claim
27 words
A method as claimed in claim 65, characterized in that: said first conductive layer (29', 46') comprises polysilicon; and said spacer layer (28, 45) comprises silicon oxide.
Claim 69
Dependent Claim
39 words
A method as claimed in claim 67, characterized in that: said second and fourth insulating layers (23, 26, 27) comprise silicon oxide; and said third insulating layer (49) comprises one of a spin-on-glass layer and a phosphosilicate glass layer.
Claim 70
Independent Claim
223 words
A method of producing a fin-shaped capacitor in a dynamic random access memory, characterized by comprising the steps of: (a) forming a first insulating layer (23, 26, 62) on a semiconductor substrate having a diffusion region (25); (b) forming a plurality of stacked-layer structures (63-68), a lowermost one (63, 64) of said stacked-layer structures being formed on said first insulating layer, each of said stacked-layer structures having a spacer layer (63, 65, 67) and a first conductive layer (64, 66, 68); (c) forming a contact hole (62A) in said stacked-layer structures and said first insulating layer so that said diffusion layer is exposed through said contact hole; (d) forming a second conductive layer (75) on said first conductive layer (68) of an uppermost one of said stacked-layer structure and said diffusion layer exposed through said contact hole, said second conductive layer substantially vertically extending along an inner wall of said contact hole; (e) patterning said second conductive layer (75) and said stacked-layer structures into a shape of a storage electrode (90) of said fin-shaped capacitor; (f) isotropically etching said spacer layer (63, 65, 67) of each of said stacked-layer structures so that said spacer layer is removed; (i) forming a dielectric film (36) around said storage electrode; and (j) forming a cell plate (37) around said storage electrode covered by said dielectric film.
Claim 71
Dependent Claim
86 words
A method as claimed in claim 70, characterized in that said step (a) comprises the steps of: forming a second insulating layer (23, 26) on said semiconductor substrate; forming a third insulating layer (62) on said second insulating layer; heating said third insulating layer so that said third insulating layer has a substantially flat surface; and forming a fourth insulating layer (64) on said substantially flat surface of said third insulating layer, and characterized in that: said fourth insulating layer is removed during said step (f).
Claim 72
Dependent Claim
38 words
A method as claimed in claim 71, characterized in that: said second and fourth insulating layers (26, 63) comprises silicon oxide; said third insulating layer (62) comprises silicon nitride; and said first and second conductive layers comprise polysilicon.
Claim 73
Dependent Claim
119 words
A method as claimed in claim 70, characterized in that: said step (c) comprises: forming a third conductive layer (70) on a top of said stacked layer structures; forming a second insulating layer (71) on said third conductive layer; forming a photoresist film (72) having a window pattern on said second insulating layer; etching said second insulating layer and said third conductive layer so that a first window is formed in said third conductive layer and said second insulating layer; removing said photoresist film; and forming a conductive sidwall (74) around an inner wall of said third conductor layer defining said window, wherein said contact hole formed by said step (c) having a size defined by said conductive sidewall.
References Cited (Backward Citations)
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