EP0445754A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method for growing a diamond or c-BN thin film
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1991-03-06
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Granted: —
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Expires: 2011-03-06
Abstract
Abstract The invention relates to a method for growing a thin epitaxial film selected from a diamond film and a c-BN film or a substrate by vapor phase synthesis comprising the steps of: (a) placing the substrate in a vacuum chamber; (b) heating the chamber to a temperature in the range 500 to 1200°C; (c) treating the substrate with a gaseous mixture selected from a chlorine containing gaseous mixture and a fluorine containing gaseous mixture; (d) evacuating the gaseous mixture; and (e) epitaxially growing the thin epitaxial film by introducing a feed gas under chemical vapor deposition conditions.
Inventors
- 👤 Tsunenobu Kimoto
- 👤 Tadashi Tomikawa
- 👤 Nobuhiko Fujita
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-27 05:46
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C23; C23C; C23C16/00; C23C16/02; C23C16/0227; C23C16/0236; C23C16/0245; C23C16/22; C23C16/26; C23C16/27; C23C16/274; C23C16/278; C23C16/30; C23C16/34; C23C16/342; C30B29/00; C30B29/02; C30B29/04; C30B29/10; C30B29/40; C30B29/403
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
93 words
A method for growing a thin epitaxial film selected from a diamond film and a c-BN film an a substrate by vapor phase synthesis comprising the steps of: (a) placing the substrate in a vacuum chamber; (b) heating the chamber to a temperature in the range 500 to 1200°C; (c) treating the substrate with a gaseous mixture selacted from a chlorine containing gaseous mixture and a fluorine containing gaseous mixture; (d) evacuating the gaseous mixture; and (e) epitaxially growing the thin epitaxial film by introducing a feed gas under chemical vapor deposition conditions.
Claim 2
Dependent Claim
17 words
A method as claimed in claim 1, wherein the gaseous mixture is a chlorine containing gaseous mixture.
Claim 3
Dependent Claim
24 words
A method as claimed in claim 2, wherein the chlorine containing gaseous mixture comprises a chlorine containing compound selected from HCl, CCl₄, and Cl₂.
Claim 4
Dependent Claim
17 words
A method as claimed in claim 1, wherein the gaseous mixture is a fluorine containing gaseous mixture.
Claim 5
Dependent Claim
24 words
A method as claimed in claim 4, wherein the fluorine containing gaseous mixture comprises a fluorine containing compound selected from HF, CF₄, and F₂.
Claim 6
Dependent Claim
26 words
A method as claimed in claim 1, wherein the feed gas for epitaxially growing the thin layer is selected from a mixture of CH₄ and H₂.
Claim 7
Dependent Claim
19 words
A method as claimed in claim 1, wherein step (c) takes place at a temperature in the range 800-1000°C.
Claim 8
Dependent Claim
15 words
A method according to claim 1, wherein the substrate is selected from diamond and c-BN.
Claim 9
Dependent Claim
14 words
A method as claimed in claim 6 wherein the feed gas also comprises B₂H₆.
Claim 10
Independent Claim
88 words
A method for growing a thin epitaxial film selected from a diamond film and a c-BN film on a substrate by vapor phase synthesis comprising the steps of: (a) placing the substrate in a vacuum chamber (b) elevating the temperature of the chamber to a temperature in the range 300-1200° (c) treating the substrate with a nitrogen containing plasma or a hydrogen containing plasma; (d) evacuating the plasma source gaseous mixture; (e) epitaxially growing the thin epitaxial film by introducing a feed gas under chemical vapor deposition conditions.
Claim 11
Dependent Claim
15 words
A process according to claim 10, wherein the plasma inducing microwave power is 200-700 W.
Claim 12
Dependent Claim
15 words
A process according to claim 11, wherein the plasma inducing microwave power is 300-600 W.
Claim 13
Dependent Claim
13 words
A process according to claim 10, wherein the plasma is a nitrogen plasma.
Claim 14
Dependent Claim
13 words
A process according to claim 10, wherein the plasma is a hydrogen plasma.
Claim 15
Dependent Claim
15 words
A process according to claim 10, wherein the substrate is selected from diamond and c-BN.
References Cited (Backward Citations)
GB2128637A
Cited
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