EP0443348A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Fine processing method using oblique metal deposition
Assignee: Rohm Co Ltd
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Filing: 1991-01-30
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Granted: —
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Expires: 2011-01-30
Abstract
Abstract A resist pattern having a prescribed opening is formed over a semiconductor substrate through an insulative layer. A Ti film is formed, by oblique vacuum vapor deposition, on the resist pattern and on part of the area of the insulative layer which constitutes the bottom surface of the resist opening. The insulative film is etched using the Ti film as a mask to form a groove through the insulative layer.
Inventors
- 👤 Yoshikazu Rohm Co. Ltd. Nakagawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 10:37
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/061; H10D30/0612; H10P; H10P50/00; H10P50/73; Y; Y10; Y10S; Y10S438/00; Y10S438/97
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
117 words
A method of forming a groove through a layer formed on a substrate, comprising: the first step of forming a layer on a substrate; the second step of forming a resist pattern having a prescribed opening on the layer; the third step of depositing, by vacuum vapor deposition in a direction oblique from a vertical direction to the substrate, a metal material to form a metal film on the resist pattern and on a part of an area of the layer, the area constituting a bottom surface of the opening of the resist pattern; and the fourth step of etching the layer using the deposited metal film as a mask to form a groove through the layer.
Claim 2
Dependent Claim
12 words
The method according to claim 1, wherein the metal material is titanium.
Claim 3
Dependent Claim
13 words
The method according to claim 1, wherein the layer is an insulative layer.
Claim 4
Dependent Claim
27 words
The method according to claim 3, wherein the insulative layer comprises an SiON layer formed on the substrate and an SiN layer formed on the SiON layer.
Claim 5
Dependent Claim
45 words
The method according to claim 4, wherein the fourth step comprises: the first substep of etching the SiN layer using the deposited metal film as a mask; and the second substep of performing etching to remove the metal film and to side-etch the SiON layer.
Claim 6
Dependent Claim
20 words
The method according to claim 5, wherein in the first substep the SiN layer is etched by reactive ion etching.
Claim 7
Dependent Claim
23 words
The method according to claim 5, wherein in the second substep the metal film and the SiON layer is etched with hydrofluoric acid.
Claim 8
Dependent Claim
16 words
The method according to claim 5, further comprising the fifth step of removing the resist pattern.
Claim 9
Dependent Claim
13 words
The method according to claim 1, wherein the substrate is a semiconductor substrate.
References Cited (Backward Citations)
No citation records indexed.
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