EP0442491A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device having a wiring pattern in which a plurality of lines are arranged in close proximity to one another
Assignee: Toshiba Corp
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Filing: 1991-02-14
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Granted: —
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Expires: 2011-02-14
Abstract
Abstract Three first patterned lines (1, 1, 1) made of aluminum extend in one direction on an insulation layer and are arranged at minimum intervals λ1 according to the design rules. End portions of the first patterned lines (1, 1, 1) are connected to those of three second patterned lines (2, 2, 2) made of aluminum extending along a line perpendicular to the first patterned lines (1, 1, 1). The second patterned lines (2, 2, 2) are arranged at intervals λ2, which are wider than the minimum interval λ1. All of the lines (1, 1, 1 and 2, 2, 2) have the minimum width according to the design rules.
Inventors
- 👤 Hidenori C/O Intellectual Property Div. Suzuki
- 👤 Satoshi C/O Intellectual Property Div. Yamano
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 11:51
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/435; H10W20/43
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
90 words
A semiconductor device comprising: a plurality of first patterned lines (1) extending in one direction on an insulation layer (5) and arranged at first intervals (λ1); a plurality of second patterned lines (2), whose end portions are respectively connected to the end portions of said first patterned lines, extending along lines crossing said first lines and arranged at second intervals (λ2) wider than the first intervals; and a CVD oxide film (3) deposited on the entire surface of said insulation layer (5) including said first and second lines (1, 2).
Claim 2
Dependent Claim
31 words
A semiconductor device according to claim 1, characterized in that the widths of said first and second patterned lines are the minimum widths according to design rules of the semiconductor device.
Claim 3
Dependent Claim
25 words
A semiconductor device according to claim 1, characterized in that said first intervals are the minimum intervals according to design rules of the semiconductor device.
Claim 4
Dependent Claim
32 words
A semiconductor device according to claim 1, characterized in that said CVD oxide film formed on said second patterned lines has a thickness of T1, and said second intervals (λ2) are 1.8·T1.
Claim 5
Dependent Claim
107 words
A semiconductor device comprising: a plurality of first patterned lines (1) extending in one direction on an insulation layer (5) and arranged at first intervals (λ1), each of said first patterned lines having a first width (W1); a plurality of second lines (2), whose end portions are respectively connected to the end portions of the first patterned lines, extending along lines crossing the first patterned lines and arranged at second intervals (λ2), each of said second patterned lines having a second width (W2); and a CVD oxide film (3) deposited on the entire surface of said insulation layer (5) including said first and second lines (1, 2).
Claim 6
Dependent Claim
44 words
A semiconductor device according to claim 5, characterized in that said first width is larger than the minimum width according to design rules of the semiconductor device, and said second width is the minimum width according to the design rules of the semiconductor device.
Claim 7
Dependent Claim
39 words
A semiconductor device according to claim 5, characterized in that said first interval (λ1) is the minimum interval according to the design rules of the semiconductor device, and said second interval (λ2) is wider than said first interval (λ1).
Claim 8
Dependent Claim
118 words
A semiconductor device comprising: a plurality of first patterned lines (1) extending in one direction on an insulation layer (5) and arranged at minimum intervals (λ1) according to design rules of the semiconductor device, each of the first lines having a predetermined thickness; a plurality of second patterned lines (2), whose end portions are respectively connected to the end portions of the first patterned lines, extending along lines crossing the first patterned lines and arranged at the minimum intervals according to the design rules of the semiconductor device, each of the second patterned lines having another thickness; and a CVD oxide film (3) deposited on the entire surface of said insulation layer including said first and second lines.
Claim 9
Dependent Claim
21 words
A semiconductor device according to claim 8, characterized in that said second patterned lines are thinner than said first patterned lines.
References Cited (Backward Citations)
No citation records indexed.
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