EP0442490B1
Expired / Lapsed
EP
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Method for producing single crystal boron nitride film
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1991-02-14
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Granted: 1995-05-03
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Expires: 2011-02-14
Abstract
No abstract record available.
Inventors
- 👤 Tunenobu C/O Itami Works Of Sumitomo Kimoto
- 👤 C/O Itami Works Of Sumitomo Tomikawa Tadashi
- 👤 Nobuhiko C/O Itami Works Of Sumitomo Fujita
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 02:53
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/10; C30B29/40; C30B29/403; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C16/342; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45531; C23C16/45536; C23C16/45542; C30B25/00; C30B25/02; C30B25/14
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
113 words
A method for producing a single crystal cubic boron nitride film comprising: alternately supplying a raw material gas comprising boron atoms and a raw material gas comprising nitrogen atoms in a vacuum chamber to form a single crystal cubic boron nitride film on a heated substrate selected from a diamond substrate and a cubic boron nitride substrate; and evacuating the vacuum chamber when one raw material gas is switched to the other to prevent coexistence of both raw material gases in the vacuum chamber, wherein the substrate temperature is from 300 to 600°C in a Molecular Beam Epitaxy (MBE) method or 600 to 1000°C in a Metal Organic Chemical Vapour Deposition (MOCVD) method.
Claim 2
Dependent Claim
28 words
The method according to claim 1, wherein the raw material comprising the boron atoms is selected from the group consisting of B₂H₆, BF₃, BCl₃, BBr₃, B(CH₃)₃ and B(C₂H₅)₃.
Claim 3
Dependent Claim
25 words
The method according to claim 1, wherein the raw material comprising the nitrogen atoms is selected from the group consisting of NH₃, N₂ and NF₃.
Claim 4
Independent Claim
121 words
A method for producing a single crystal cubic boron nitride film comprising: alternately supplying a raw material gas comprising boron atoms and a raw material gas comprising nitrogen atoms in a vacuum chamber to form a single crystal cubic boron nitride film on a heated substrate selected from a diamond substrate and a cubic boron nitride substrate; and evacuating the vacuum chamber and purging the vacuum chamber with a gas which is inactive with the raw material gases when one raw material gas is switched to the other to prevent coexistence of both raw material gases in the vacuum chamber, wherein the substrate temperature is from 300 to 600°C in a MBE method or 600 to 1000°C in a MOCVD method.
Claim 5
Dependent Claim
28 words
The method according to claim 4, wherein the raw material comprising the boron atoms is selected from the group consisting of B₂H₆, BF₃, BCl₃, BBr₃, B(CH₃)₃ and B(C₂H₅)₃.
Claim 6
Dependent Claim
25 words
The method according to claim 4, wherein the raw material comprising the nitrogen atoms is selected from the group consisting of NH₃, N₂ and NF₃.
Claim 7
Dependent Claim
14 words
The method according to claim 4, wherein a purging gas is hydrogen or argon.
Claim 8
Independent Claim
137 words
A method for producing a single crystal cubic boron nitride film by a MBE method comprising: pre-cracking a NH₃ gas with plasma or pyrolysis; alternately supplying a raw material NH₃ gas at a flow rate of 0.1 to 10 sccm and a raw material B₂H₆ gas at a flow rate of 0.1 to 3.0 sccm on a substrate heated at a temperature of 300°C to 600°C which is selected from the group consisting of a diamond substrate and a cubic boron nitride substrate in a vacuum chamber which is evacuated to a pressure of 7 x 10⁻⁴ Pa to 4 x 10⁻² Pa (5 x 10⁻⁶ to 3 x 10⁻⁴ Torr); and evacuating the vacuum chamber when one raw material gas is switched to the other to prevent coexistence of both raw materials in the vacuum chamber.
Claim 9
Independent Claim
133 words
A method for producing a single crystal cubic boron nitride film by a MOCVD method comprising: alternately supplying a raw material NH₃ gas at a flow rate of 2 to 1000 sccm and a raw material B(CH₃)₃ gas at a flow rate of 2 to 30 sccm on a substrate heated at a temperature of 600°C to 1000°C which is selected from the group consisting of a diamond substrate and a cubic boron nitride substrate in a vacuum chamber which is evacuated to a pressure of 13,3 Pa to 4 x 10³ Pa (0.1 to 30 Torr); and evacuating the vacuum chamber and purging the vacuum chamber interior with an inert gas when one raw material gas is switched to the other to prevent coexistence of both raw materials in the vacuum chamber.
References Cited (Backward Citations)
No citation records indexed.
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