EP0440259A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method for sputtering a hydrogen-doped carbon protective film on a magnetic disk
Assignee: WD Media LLC
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Filing: 1991-02-01
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Granted: —
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Expires: 2011-02-01
Abstract
Abstract A carbon film for protecting a magnetic disk is sputtered in the presence of hydrogen. If a sufficient amount of hydrogen is present in the sputtering chamber (5), the resulting carbon film will exhibit superior mechanical characteristics, i.e. an enhanced wear resistance during a contact-start-stop or drag test in a disk drive. Sputtering in the presence of hydrogen can be accomplished by either DC or RF magnetron sputtering, or DC or RF diode sputtering. <IMAGE>
Inventors
- 👤 Tsutomu Tom Yamashita
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 05:10
CPC Classifications
G; G11; G11B; G11B5/00; G11B5/84; G11B5/8408; Y; Y10; Y10S; Y10S428/00; Y10S428/90; Y10T; Y10T428/00; Y10T428/30
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
56 words
A method for forming a carbon film on a magnetic memory, said magnetic memory comprising a magnetic film formed on a non-magnetic substrate, said method comprising the step of sputtering carbon onto said memory in the presence of a sufficient amount of a hydrogen-containing gas to substantially enhance the mechanical wear resistance of the carbon film.
Claim 2
Dependent Claim
10 words
Method of claim 1 wherein said hydrogen-containing gas is hydrogen.
Claim 3
Dependent Claim
24 words
Method of claim 1 wherein over 40 SCCM of a gas mixture containing at least 20% hydrogen is introduced into the sputtering chamber (5).
Claim 4
Dependent Claim
50 words
Method of claim 1 wherein carbon is sputtered from a carbon sputtering target (7;8), and wherein an input gas flow is such that the gas at the sputtering target (7;8) would have a hydrogen concentration greater than or equal to about 15% by volume if sputtering were not taking place.
Claim 5
Dependent Claim
39 words
Method of claim 4 wherein the input gas flow is such that the gas at the sputtering target (7;8) would have a hydrogen concentration greater than or equal to about 20% by volume if sputtering were not taking place.
Claim 6
Dependent Claim
25 words
Method of claim 5 wherein 60 SCCM of a 20% H₂ gas mixture is introduced into the sputtering chamber(5) adjacent the carbon sputtering target (7;8).
Claim 7
Dependent Claim
37 words
Method of anyone of claims 1 to 6 wherein the amount of hydrogen in said sputtering chamber (5) is sufficient to at least double the useful life of the resulting carbon in a mechanical wear drag test.
Claim 8
Dependent Claim
38 words
Method of anyone of claims 1 to 6 wherein the amount of hydrogen in said sputtering chamber (5) is sufficient to at least triple the useful life of the resulting carbon film in a mechanical wear drag test.
Claim 9
Dependent Claim
27 words
Method of anyone of claims 1 to 8 wherein the hydrogen concentration at the sputtering target (7;8) is greater than about 7.5% when sputtering is taking place.
Claim 10
Dependent Claim
23 words
Method of claim 9 wherein the hydrogen concentration at the sputtering target (7;8) is greater than about 10% when sputtering is taking place.
Claim 11
Dependent Claim
37 words
A magnetic memory comprising: a layer of magnetic media: and a carbon film sputtered onto said media in the presence of a sufficient amount of hydrogen to substantially enhance the mechanical wear resistance of said carbon film.
Claim 12
Dependent Claim
49 words
Memory of claim 11 wherein the carbon film is formed by sputtering the carbon from a sputtering target (7;8) in the presence of an input gas flow which would provide a hydrogen concentration adjacent the sputtering target (7;8) of at least about 15% if sputtering were not taking place.
Claim 13
Dependent Claim
28 words
Memory of claim 11 wherein said presence of hydrogen is sufficient to at least double the useful life of the resulting carbon film in a mechanical drag test.
Claim 14
Independent Claim
104 words
A method for manufacturing magnetic disk in a sputtering apparatus (20), said sputtering apparatus (20) comprising at least first and second chambers (3,4), said first and second chambers (3,4) being in fluid communication of gases with one another, said method comprising the steps of: sputtering a magnetic alloy layer onto said substrate (1) in said first chamber (3); moving said substrate (1) from said first chamber (3) to said second chamber (4); sputtering carbon onto said magnetic alloy layer in said second chamber (4); and introducing (22) hydrogen into said second chamber (4) such that said carbon is sputtered in the presence of hydrogen.
Claim 15
Dependent Claim
26 words
Method of claim 14 wherein said apparatus further comprises barriers (19) between said first and second chambers (3,4) to minimize gas flow between said chambers (3,4).
Claim 16
Dependent Claim
74 words
Method of claim 14 or 15 wherein said sputtering apparatus (20) includes a third chamber (2), said method further comprising the steps of: placing said substrate (1) in said third chamber (2) prior to said step of sputtering a magnetic alloy layer; sputtering an underlayer onto said substrate (1) while said substrate (1) is in said third chamber (2); and moving said substrate (1) from said third chamber (2) to said first chamber (3).
References Cited (Backward Citations)
No citation records indexed.
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