EP0439163A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device having a high-frequency bipolar transistor
Assignee: Toshiba Corp
•
Filing: 1991-01-24
•
Granted: —
•
Expires: 2011-01-24
Abstract
Abstract In a high-frequency transistor a base electrode extends (16a) from at lease two portions of a transistor region (19) toward the outside, and the extension portions are connected to each other. Thus, a margin of a current density of a base electrode is not decreased. Moreover, the base electrode extends from at lease two portions of the transistor region, and at least one of the two extension portions extends on a resistor layer (18) connected to an emitter electrode (17a, 17b) and is connected to the other extension portion. For this reason, a collector electrode (14a), the emitter electrode (17a, 17b), and the base electrode (16a) can be formed at the same time, and a pattern for the base electrode (16) can be easily obtained.
Inventors
- 👤 Noburo C/O Intellectual Property Div. Noda
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 02:27
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/40; H10D10/421; H10D62/00; H10D62/10; H10D62/13; H10D62/133; H10D64/00; H10D64/20; H10D64/27; H10D64/281
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
87 words
A semiconductor device comprising: a transistor region (19) in a semiconductor substrate (11); a collector region (12, 13) and a base region (15) formed in said transistor region; a plurality of emitter regions (17) and a plurality of high-concentration base regions (16) alternately formed one by one in said base region; a base electrode (16a) which is formed on said plurality of high-concentration base regions (16) and extends from at least two portions of said transistor region, and extension portions of which are connected to each other.
Claim 2
Dependent Claim
90 words
A semiconductor device according to claim 1, characterized by further comprising: a collector electrode (14a) which is formed on said collector region (12, 13) and extends from at least two portions of said transistor region on one side, and extension portions of which are connected to each other; and an emitter electrode (17a) which is formed on said plurality of emitter regions as a continuous layer and extends on a side opposite to the side where said collector region extends, and extension portions of which are connected to each other.
Claim 3
Dependent Claim
39 words
A semiconductor device according to claim 2, characterized in that one of said extension portions of said base electrode (16a) extends on a resistor layer (18) connected to an emitter electrode and is connected to the other extension portion.
Claim 4
Dependent Claim
22 words
A semiconductor device according to claim 1, characterized in that said base electrode (16a) extends from both ends of said transistor region.
Claim 5
Dependent Claim
25 words
A semiconductor device according to claim 1, characterized in that said base electrode (16a) extends from both ends and a center of said transistor region.
Claim 6
Dependent Claim
24 words
A semiconductor device according to claim 3, characterized in that said resistor layer (18) consists of a polysilicon layer formed on said substrate (11).
Claim 7
Dependent Claim
25 words
A semiconductor device according to claim 3, characterized in that said resistor layer (18) consists of an impurity diffusion layer formed in said substrate (11).
Claim 8
Dependent Claim
149 words
A semiconductor device according to claim 1, characterized by further comprising: a collector electrode (14a) which is formed on said collector region (12, 13) and extends from at least two portions of said transistor region on one side, and extension portions of which are connected to each other; and an emitter electrode (17a) including an emitter electrode portion which is formed on a predetermined number of emitter regions of said plurality of emitter regions as a continuous layer and extends from said transistor region on a side opposite to the side where said collector region extends, and another emitter electrode portion which is formed on the other predetermined number of emitter regions of said plurality of emitter regions as a continuous layer and extends from said transistor region on said opposite side, and in which said extension portions of both said emitter electrode portions are connected to each other.
Claim 9
Dependent Claim
91 words
A semiconductor device according to claim 1, characterized by further comprising: a collector electrode (14a) which is formed on said collector region (12, 13) and extends from at least two portions of said transistor region on one side, and extension portions of which are connected to each other; and emitter electrodes (17a) which are independently formed in said plurality of emitter regions and extend from said transistor region (19) on a side opposite to the side where said collector region extends, and extension portions of which are connected to each other.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.