EP0437950A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device having silicon-on-insulator structure and method of producing the same
Assignee: Fujitsu Ltd
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Filing: 1990-12-17
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Granted: —
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Expires: 2010-12-17
Abstract
Abstract A semiconductor device includes a first substrate (3) made of a semiconductor, a first insulator layer (2, 4, 7) which is formed on the first substrate, a second substrate (1) made of a semiconductor and formed on the first insulator layer, a trench (5) which extends from a top surface of the second substrate to at least a part of the first insulator layer, and a second insulator layer (12, 13) which substantially defines a side wall of the trench.
Inventors
- 👤 Takao Miura
- 👤 Kazunori Imaoka
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 23:26
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P70/15; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/041; H10W10/061; H10W10/10; H10W10/181; H10W10/40; H10P90/1908; H10P90/1914; H10W10/011; H10W10/012; H10W10/13
Claims Analysis
Total Claims: 43
Claim 1
Independent Claim
99 words
A semiconductor device comprising a first substrate (3) made of a semiconductor, a first insulator layer (2, 4, 7) which is formed on said first substrate, a second substrate (1) made of a semiconductor and formed on said first insulator layer, said second substrate having a top surface, and a trench (5) which extends from the top surface of said second substrate to at least a part of said first insulator layer, said trench having a sidewall, characterized in that there is further provided: a second insulator layer (12) which substantially defines the side wall of said trench (5).
Claim 2
Dependent Claim
36 words
The semiconductor device as claimed in claim 1, characterized in that said first and second semiconductor substrates (3, 1) are made of silicon and said first insulator layer (2, 4, 7) is made of silicon dioxide.
Claim 3
Dependent Claim
21 words
The semiconductor device as claimed in claim 2, characterized in that said second insulator layer (12) is made of silicon dioxide.
Claim 4
Dependent Claim
98 words
The semiconductor device as claimed in any of claims 1 to 3, characterized in that said trench (5) extends from the top surface of said second substrate (1) to a part of said first substrate (3) at a bottom part of said trench by penetrating said first insulator layer (2, 4, 7), and said semiconductor device further comprises a third insulator layer (13) which substantially defines the bottom part of said trench on the side of said first substrate, said second insulator layer (12) defining the side wall of said trench on the side of said second substrate.
Claim 5
Dependent Claim
41 words
The semiconductor device as claimed in claim 4, characterized in that said first and second substrates (3, 1) are made of silicon, and said second and third insulator layers (12, 13) respectively are oxidized portions of said first and second substrates.
Claim 6
Dependent Claim
52 words
The semiconductor device as claimed in claim 4 or 5, characterized in that there are further provided a filling material (14) which fills the inside of said trench (5), and a fourth insulator layer (15) which covers an exposed top of said filling material and connects to said second insulator layer (12).
Claim 7
Dependent Claim
70 words
The semiconductor device as claimed in claim 4, characterized in that there are further provided a fourth insulator layer (16, 18, 20) which covers the inside of said trench (15), a filling material (14) which is formed on said fourth layer and fills the inside of said trench, and a fifth insulator layer (15) which covers an exposed top of said filling material and connects to said fourth insulator layer.
Claim 8
Dependent Claim
85 words
The semiconductor device as claimed in claim 4, characterized in that there are further provided a fourth insulator layer (16, 19, 21) which covers the inside of said trench (5), a fifth insulator layer (17, 18, 20) which is formed on said fourth insulator layer, a filling material (14) which is formed on said fifth layer and fills the inside of said trench, and a sixth insulator layer (15) which covers an exposed top of said filling material and connects to said fifth insulator layer.
Claim 9
Dependent Claim
29 words
The semiconductor device as claimed in claim 8, characterized in that said fourth and fifth insulator layers (16, 19, 21; 17, 18, 20) are made of mutually different materials.
Claim 10
Dependent Claim
80 words
The semiconductor device as claimed in claim 1, characterized in that said first insulator layer (2, 4) is made up of top and bottom insulator layers (2, 4) which are bonded together, said top insulator layer (2) being initially formed on said second substrate (1), said bottom insulator layer (4) being initially formed on said first substrate (3), said trench (5) extending from the top surface of said second substrate to at least a part of said top insulator layer.
Claim 11
Dependent Claim
33 words
The semiconductor device as claimed in claim 10, characterized in that said trench (5) extends from the top surface of said second substrate (1) to a part of said bottom insulator layer (4).
Claim 12
Dependent Claim
36 words
The semiconductor device as claimed in claim 10 or 11, characterized in that said first and second substrates (3, 1) are made of silicon and said first insulator layer (2, 4) is made of silicon dioxide.
Claim 13
Dependent Claim
21 words
The semiconductor device as claimed in claim 12, characterized in that said second insulator layer (12) is made of silicon dioxide.
Claim 14
Dependent Claim
101 words
The semiconductor device as claimed in claim 10, characterized in that said trench (5) extends from the top surface of said second substrate (1) to a part of said first substrate (3) at a bottom part of said trench by penetrating the top and bottom insulator layers (2, 4) of said first insulator layer (2, 4), and said semiconductor device further comprises a third insulator layer (13) which substantially defines the bottom part of said trench on the side of said first substrate, said second insulator layer defining the side wall of said trench on the side of said second substrate.
Claim 15
Dependent Claim
41 words
The semiconductor device as claimed in claim 14, characterized in that said first and second substrates (3, 1) are made of silicon, and said second and third insulator layers (12, 13) respectively are oxidized portions of said first and second substrates.
Claim 16
Dependent Claim
50 words
The semiconductor device as claimed in claim 14, characterized in that there is further provided a filling material (14) which fills the inside of said trench (5), and a fourth insulator layer (15) which covers an exposed top of said filling material and connects to said second insulator layer (12).
Claim 17
Dependent Claim
70 words
The semiconductor device as claimed in claim 14, characterized in that there are further provided a fourth insulator layer (16, 18, 20) which covers the inside of said trench (5), a filling material (14) which is formed on said fourth layer and fills the inside of said trench, and a fifth insulator layer (15) which covers an exposed top of said filling material and connects to said fourth insulator layer.
Claim 18
Dependent Claim
85 words
The semiconductor device as claimed in claim 14, characterized in that there are further provided a fourth insulator layer (16, 19, 21) which covers the inside of said trench (5), a fifth insulator layer (17, 18, 20) which is formed on said fourth insulator layer, a filling material (14) which is formed on said fifth layer and fills the inside of said trench, and a sixth insulator layer (15) which covers an exposed top of said filling material and connects to said fifth insulator layer.
Claim 19
Dependent Claim
29 words
The semiconductor device as claimed in claim 18, characterized in that said fourth and fifth insulator layers (16, 19, 21; 17, 18, 20) are made of mutually different materials.
Claim 20
Independent Claim
178 words
A method of producing a semiconductor device comprising the steps of preparing a stacked structure including a first substrate (3), a first insulator layer (2, 4, 7) formed on said first substrate and a second substrate (1) formed on said first insulator layer, and forming a trench (5) which extends from a top surface of said second substrate to at least a part of said first insulator layer, said trench having a sidewall defined by a damage layer (11) and a side surface of said first insulator layer exposed within said trench, said damage layer being generated on at least said second substrate exposed within said trench due to the formation of said trench, characterized in that there are provided the steps of: removing said damage layer (11) within said trench (5); and forming a second insulator layer (12, 13) within said trench excluding the side surface of said first insulator layer (2, 4, 7) so that a surface of said second insulator layer exposed within said trench substantially matches the side surface of said first insulator layer.
Claim 21
Dependent Claim
39 words
The method of producing the semiconductor device as claimed in claim 20, characterized in that said first and second substrates (3, 1) are made of silicon and said first insulator layer (2, 4, 7) is made of silicon dioxide.
Claim 22
Dependent Claim
26 words
The method of producing the semiconductor device as claimed in claim 21, characterized in that said second insulator layer (12, 13) is made of silicon dioxide.
Claim 23
Independent Claim
95 words
The method of producing the semiconductor device as claimed in any of claims 20 to 22, characterized in that said step of forming the trench (5) forms said trench which extends from the top surface of said second substrate (1) to a part of said first substrate (3) at a bottom part of said trench by penetrating said first insulator layer (2, 4, 7), and said step of forming the second insulator layer (12, 13) also forms said second insulator layer at the bottom part of said trench on the side of said first substrate.
Claim 24
Dependent Claim
50 words
The method of producing the semiconductor device as claimed in claim 23, characterized in that said first and second substrates (3, 1) are made of silicon, and said step of forming the second insulator layer (12, 13) oxidizes portions of said first and second substrates exposed within said trench (5).
Claim 25
Dependent Claim
59 words
The method of producing the semiconductor device as claimed in claim 23, characterized in that there are further provided the steps of filling the inside of said trench (5) by a filling material (14), and forming a third insulator layer (15) which covers an exposed top of said filling material and connects to said second insulator layer (12, 13).
Claim 26
Dependent Claim
77 words
The method of producing the semiconductor device as claimed in claim 23, characterized in that there are further provided the steps of forming a third insulator layer (16, 18, 20) which covers the inside of said trench (5), forming a filling material (14) on said third layer to fill the inside of said trench, and forming a fourth insulator layer (15) which covers an exposed top of said filling material and connects to said third insulator layer.
Claim 27
Dependent Claim
90 words
The method of producing the semiconductor device as claimed in claim 23, characterized in that there are further provided the steps of forming a third insulator layer (16, 19, 21) which covers the inside of said trench (5), forming a fourth insulator layer (17, 18, 20) on said third insulator layer, forming a filling material (14) on said fourth layer to fill the inside of said trench, and forming a fifth insulator layer (15) which covers an exposed top of said filling material and connects to said fourth insulator layer.
Claim 28
Dependent Claim
33 words
The method of producing the semiconductor device as claimed in claim 27, characterized in that said fourth and fifth insulator layers (16, 19, 21; 17, 18, 20) are made of mutually different materials.
Claim 29
Dependent Claim
98 words
The method of producing the semiconductor device as claimed in claim 20, characterized in that said step of preparing the stacked structure includes forming said first insulator layer (2, 4) from top and bottom insulator layers (2, 4) which are bonded together, said top insulator layer (2) being initially formed on said second substrate (1), said bottom insulator layer (4) being initially formed on said first substrate (3), said step of forming the trench forms said trench (5) which extends from the top surface of said second substrate to at least a part of said top insulator layer.
Claim 30
Dependent Claim
45 words
The method of producing the semiconductor device as claimed in claim 29, characterized in that said step of forming the trench forms said trench (5) which extends from the top surface of said second substrate (1) to a part of said bottom insulator layer (4).
Claim 31
Dependent Claim
38 words
The method of producing the semiconductor device as claimed in claim 29, characterized in that said first and second substrates (3, 1) are made of silicon and said first insulator layer (2, 4) is made of silicon dioxide.
Claim 32
Dependent Claim
52 words
The method of producing the semiconductor device as claimed in claim 31, characterized in that said step of forming the second insulator layer forms said second insulator layer (12, 13) which is made of silicon dioxide by oxidizing a portion of at least said second substrate (1) exposed within said trench (5).
Claim 33
Dependent Claim
99 words
The method of producing the semiconductor device as claimed in claim 29, characterized in that said step of forming the trench forms said trench (5) which extends from the top surface of said second substrate (1) to a part of said first substrate (3) at a bottom part of said trench by penetrating the top and bottom insulator layers (2, 4) of said first insulator layer (2, 4), and said step of forming the second insulator layer also forms said second insulator layer (12, 13) at the bottom part of said trench on the side of said first substrate.
Claim 34
Dependent Claim
62 words
The method of producing the semiconductor device as claimed in claim 33, characterized in that said first and second substrates (3, 1) are made of silicon, and said step of forming the second insulator layer forms said second insulator layer (2, 4) which is made of silicon dioxide by oxidizing portions of said first and second substrates exposed within said trench (5).
Claim 35
Dependent Claim
59 words
The method of producing the semiconductor device as claimed in claim 33, characterized in that there are further provided the steps of filling the inside of said trench (5) by a filling material (14), and forming a third insulator layer (15) which covers an exposed top of said filling material and connects to said second insulator layer (2, 4).
Claim 36
Dependent Claim
77 words
The method of producing the semiconductor device as claimed in claim 33, characterized in that there are further provided the steps of forming a third insulator layer (16, 18, 20) which covers the inside of said trench (5), forming a filling material (14) on said third layer to fill the inside of said trench, and forming a fourth insulator layer (15) which covers an exposed top of said filling material and connects to said third insulator layer.
Claim 37
Dependent Claim
93 words
The method of producing the semiconductor device as claimed in claim 33, characterized in that there are further provided the steps of forming a third insulator layer (16, 19, 21) which covers the inside of said trench (5), forming a fourth insulator layer (17, 18, 20) which is formed on said third insulator layer, forming a filling material (14) on said fourth layer to fill the inside of said trench, and forming a fifth insulator layer (15) which covers an exposed top of said filling material and connects to said fourth insulator layer.
Claim 38
Dependent Claim
33 words
The method of producing the semiconductor device as claimed in claim 37, characterized in that said third and fourth insulator layers (16, 19, 21; 17, 18, 20) are made of mutually different materials.
Claim 39
Dependent Claim
42 words
The method of producing the semiconductor device as claimed in claim 20, characterized in that said step of preparing the stacked structure includes bonding said first insulator layer (7) which is formed on said first substrate (3) onto said second substrate (1).
Claim 40
Dependent Claim
42 words
The method of producing the semiconductor device as claimed in claim 20, characterized in that said step of preparing the stacked structure includes bonding said first insulator layer (7) which is formed on said second substrate (1) onto said first substrate (3).
Claim 41
Dependent Claim
58 words
The method of producing the semiconductor device as claimed in claim 20, characterized in that said step of preparing the stacked structure includes implanting oxygen ions into a silicon substrate by separation by implanted oxygen to form said first insulator layer (7), said first insulator layer separating the silicon substrate into said first and second substrates (3, 1).
Claim 42
Dependent Claim
90 words
The method of producing the semiconductor device as claimed in claim 20, characterized in that said step of preparing the stacked structure includes stacking a silicon dioxide layer and a polysilicon layer on a silicon substrate, and irradiating an energy beam on said polysilicon layer to form a single crystal layer by recrystallization, said silicon substrate forming one of said first and second substrates (3, 1), said silicon dioxide layer forming said first insulator layer (7), said single crystal layer forming the other one of said first and second substrates.
Claim 43
Dependent Claim
68 words
The method of producing the semiconductor device as claimed in claim 20, characterized in that said first and second substrates (3, 1) are made of silicon, said first insulator layer (2, 4, 7) is made of silicon dioxide, and said step of removing the damage layer (11) uses a wet etching using an etchant selected from a group consisting of HF/HNO₃, HF/HNO₃/H₂O₂/Br₂, HF/HNO₃/H₂O₂/CrO₃, HF/HNO₃/H₂O₂/H₂SO₄, HF/HNO₃/H₂O₂, HF/HNO₃/H₃PO₄, and HF/H₃PO₄.
References Cited (Backward Citations)
No citation records indexed.
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