EP0435187A2
Expired / Lapsed
EP
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Method of fabricating a semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1990-12-21
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Granted: —
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Expires: 2010-12-21
Abstract
Abstract A method of fabricating a semiconductor devices, comprising the steps of:- (1) forming a plurality of insulating films (22, 23) on a base layer (21), said plurality of insulating films comprising at least a lower layer insulating film (22) and an upper layer insulating film (23), said lower layer insulating film being smaller in etch rate than said upper layer insulating film and serving as an etching stopper, and forming a first opening portion (24) by etching said upper layer insulating film, and exposing said lower layer insulating film in said first opening portion, and forming a second opening portion (25) smaller in width than said first opening portion by etching said lower layer insulating film, at a location beneath said first opening portion, and exposing said base layer in said second opening portion; then (2) forming a metal layer (26) in said first and second opening portions so that it can contact with said base layer exposed in said second opening portion; then (3) burying said metal layer in said first and second opening portions and planarising the buried metal layer by irradiating said metal layer with a laser beam (30).
Inventors
- 👤 Koichi C/O Fujitsu Limited Kobayashi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 02:49
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/059; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2042; H10P95/00; H10W20/071; H10W20/074; H10W20/076; H10W20/081; H10W20/084; H10W20/085; H10W20/086; H10W20/089; H10W20/40; H10W20/0886; H10W20/0888; Y; Y10; Y10S; Y10S438/00; Y10S438/97
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
239 words
A method of fabricating a semiconductor devices, comprising the steps of:- (1) forming a plurality of insulating films (22, 23; 42, 43, 44; 62, 63, 64; 82, 83, 84; 102, 103, 104; 122, 123, 124) on a base layer (21; 41; 61; 81; 101; 121), said plurality of insulating films comprising at least a lower layer insulating film (22, 43; 63; 83; 103; 123) and an upper layer insulating film (23; 44; 64; 84; 104; 124), said lower layer insulating film being smaller in etch rate than said upper layer insulating film and serving as an etching stopper, and forming a first opening portion (24; 45; 65; 86; 106; 126) by etching said upper layer insulating film, and exposing said lower layer insulating film in said first opening portion, and forming a second opening portion (25; 47; 67; 88; 108; 128) smaller in width than said first opening portion by etching said lower layer insulating film, at a location beneath said first opening portion, and exposing said base layer in said second opening portion; then (2) forming a metal layer (26; 48; 68; 89; 109; 129) in said first and second opening portions so that it can contact with said base layer exposed in said second opening portion; then (3) burying said metal layer in said first and second opening portions and planarising the buried metal layer by irradiating said metal layer with a laser beam (30; 52; 92).
Claim 2
Dependent Claim
64 words
A method as claimed in claim 1, wherein said plurality of insulating films (22, 23) is formed, the first opening portion (24) is then etched in the upper layer insulating film (23), with the lower layer insulating film (22) serving as an etching stopper, and thereafter the second opening portion (25) is etched in the lower layer insulating film, to expose said base layer.
Claim 3
Dependent Claim
106 words
A method as claimed in claim 1, wherein said plurality of insulating films (42, 43, 44; 62, 63, 64) includes an underlying insulating film (42; 62) beneath said lower layer insulating film (43; 63) and wherein said plurality of insulating films (42, 43, 44; 62, 63, 64) is formed, the first opening portion (45; 65) is then etched in the upper layer insulating film (44; 64), with the lower layer insulating film (43; 63) serving as an etching stopper, and thereafter the second opening portion (47; 67) is formed by etching said lower layer insulating film and the underlying insulating film, to expose said base layer.
Claim 4
Dependent Claim
154 words
A method as claimed in claim 1, wherein said plurality of insulating films (82, 83, 84; 102, 103, 104) includes an underlying insulating film (82; 102) beneath said lower layer insulating film (83; 103), and wherein the underlying insulating film and the lower layer insulating film are formed, then an aperture (85; 105) for the second opening portion (88; 108) is formed in the lower layer insulating film by etching that film, and the upper layer insulating film ((84; 104) is formed on the lower layer insulating film so that the lower layer insulating film and said aperture are covered by the upper layer insulating film, and thereafter the first (86; 106) and second (88; 108) opening portions are formed by etching the upper layer insulating film and the underlying insulating film, with the lower layer insulating film serving as an etching stopper where said aperture is not provided, to expose said base layer.
Claim 5
Dependent Claim
154 words
A method as claimed in claim 1, wherein said plurality of insulating films (122, 123, 124) includes an underlying insulating film (122) beneath said lower layer insulating film (123), and wherein the underlying insulating film and the lower layer insulating film are formed, an aperture (125) for the second opening portion (128) is formed in the underlying insulating film and the lower layer insulating film by etching those films, and the upper layer insulating film (124) is formed on the lower layer insulating film so that the lower layer insulating film and said aperture are covered by the upper layer insulating film, and thereafter said first opening portion (126) is formed in the upper layer insulating film (124) by etching which also etches into said aperture to expose said base layer and to leave a sidewall insulating film in that aperture, thereby to define the second opening portion (128) within the sidewall insulating film.
Claim 6
Independent Claim
27 words
A method as claimed in any preceding claim, wherein the lower layer insulating film (22; 43; 63; 83; 103; 123) acts also as a light shading film.
Claim 7
Independent Claim
57 words
A method as claimed in any preceding claim, wherein one of said plurality of insulating films, for example the lower layer insulating film (22; 43; 63; 83; 103; 123), has an absorption rate of more than 30% with respect to the laser beam, thereby to avoid damage to the base layer (21; 41; 61; 81; 101; 121).
Claim 8
Independent Claim
41 words
A method as claimed in any preceding claim, wherein the base layer (21; 41; 61; 81; 101; 121) comprises any of aluminium, aluminium base compound, copper, copper base compound, single crystal silicon, polycrystal silicon, compound semiconductor for example GaAs or AlGaAs.
Claim 9
Independent Claim
20 words
A method as claimed in any preceding claim, wherein the laser beam (30; 52; 92) is an excimer laser beam.
Claim 10
Independent Claim
29 words
A method as claimed in any preceding claim, wherein the metal layer (26; 48; 68; 89; 109; 129) comprises any of aluminium, aluminium base compound, copper, copper base compound.
Claim 11
Independent Claim
48 words
A method as claimed in any preceding claim, wherein the upper layer insulating film (23; 44; 64; 84; 104; 124) comprises a silicon (Si) oxidation film, or a silicon (Si) oxidation film containing phosphorus, and said lower layer insulating film (22; 43; 63; 83; 103; 123) comprises Al₂O₃.
Claim 12
Dependent Claim
46 words
A method as claimed in claim 11 when read as appended directly or indirectly to any of claims 3, 4 or 5, wherein the underlying insulating film (42; 62; 82; 102; 122) comprises a silicon (Si) oxidation film, or a silicon (Si) oxidation film containing phosphorus.
Claim 13
Dependent Claim
58 words
A method as claimed in claim 3, 4 or 5, or any of claims 6 to 12 when read as appended directly or indirectly to any of claims 3, 4 or 5, wherein the lower layer insulating film (43; 63; 83; 103; 123) is smaller in etch rate than the underlying insulating film (42; 62; 82; 102; 122).
References Cited (Backward Citations)
No citation records indexed.
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