EP0435009A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor package connecting method, semiconductor package connecting wires and semiconductor devices
Assignee: Tanaka Electronics Co Ltd
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Filing: 1990-11-29
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Granted: —
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Expires: 2010-11-29
Abstract
Abstract A method of electrically connecting a semiconductor package to a substrate by using bump contacts formed by heating the tip of an alloy wire and directly joined to aluminum alloy wiring lines, an alloy wire for such a purpose, and a semiconductor device constructed by electrically connecting a semiconductor package to a substrate by such a method. The alloy wire is produced by drawing an alloy material produced by quench solidifying an alloy containing Pb, Sn or In as a principal element, and an additive element or additive elements. The tip of the alloy wire is heated to form a ball to be joined to the aluminum alloy wiring line as a bump contact. The Brinell hardness number of the ball is H B 6 or higher.
Inventors
- 👤 Toshinori C/O Mitaka Factory Of Tanaka Ogashiwa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 17:45
CPC Classifications
B; B23; B23K; B23K35/00; B23K35/22; B23K35/24; B23K35/26; B23K35/262; B23K35/268; B23K35/36; B23K35/3601; H; H10; H10W; H10W72/00; H10W72/071; H10W72/077; H10W72/01; H10W72/012; H10W72/01221; H10W72/01225; H10W72/015; H10W72/01551; H10W72/0711; H10W72/07141; H10W72/072; H10W72/07231; H10W72/07236; H10W72/075; H10W72/07511; H10W72/20; H10W72/241; H10W72/251; H10W72/252; H10W72/701; H10W72/90; H10W72/951; H10W72/952; H10W90/00; H10W90/701; H10W90/721; H10W90/724; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12701
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
145 words
A semiconductor package connecting method for electrically connecting a semiconductor package to a substrate, said method comprising steps of: forming a ball having a Brinell hardness number of H B 6 or higher by heating the tip of a fine alloy wire produced by drawing an alloy material containing Pb, Sn or In as a principal element and produced by quench solidification; pulling the alloy wire away from a semiconductor package or a substrate after joining the ball to an aluminum alloy wiring line formed on the semiconductor package or an aluminum alloy wiring line formed on the substrate to separate the alloy wire from the ball and to leave the ball as a bump contact on the aluminum alloy wiring line of the semiconductor package or on that of the substrate; and electrically connecting the semiconductor package to the substrate through such bump contacts.
Claim 2
Dependent Claim
145 words
A semiconductor package connecting method for electrically connecting a semiconductor package to a substrate, said method comprising steps of: forming a ball having a Brinell hardness number of H B 6 or higher by heating the tip of a fine alloy wire produced by drawing an alloy material containing Pb, Sn or In as a principal element and produced by quench solidification; pulling the alloy wire away from a semiconductor package or a substrate after joining the ball to an aluminum alloy wiring line formed on the semiconductor package or an aluminum alloy wiring line formed on the substrate to separate the alloy wire from the ball and to leave the ball as a bump contact on the aluminum alloy wiring line of the semiconductor package or on that of the substrate; and electrically connecting the semiconductor package to the substrate through such bump contacts.
Claim 3
Dependent Claim
40 words
A semiconductor package connecting method according to Claim 1, wherein the alloy wire is passed through a capillary tube employed in a wire bonder, and the balls are joined to the aluminum alloy wiring lines by a wire bonding method.
Claim 4
Dependent Claim
65 words
A semiconductor package connecting method according to Claim 1, wherein the alloy forming the alloy wire contains, as an additive element or additive elements one or some elements among Be, B, C, Mg, Al, Si, P, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Se, Zr, Nb, Mo, Pd, Ag, Cd, In, Sn, Pb, Sb, Te, lr, Pt, Au and Bi.
Claim 5
Dependent Claim
29 words
A semiconductor package connecting method according to Claim 1, wherein the Brinell hardness number of the ball is in the range of H B 6 to H B 26.
Claim 6
Dependent Claim
54 words
A semiconductor package connecting wire formed by drawing an alloy material produced by quench solidifying an alloy containing Pb, Sn or In as a principal element, and an additive element or additive elements, and capable of forming a ball having a hardness of Brinell hardness number 6 or higher when its tip is heated.
Claim 7
Dependent Claim
54 words
A semiconductor package connecting wire formed by drawing an alloy material produced by quench solidifying an alloy containing Pb, Sn or In as a principal element, and an additive element or additive elements, and capable of forming a ball having a hardness of Brinell hardness number 6 or higher when its tip is heated.
Claim 8
Dependent Claim
57 words
A semiconductor package connecting wire according to Claim 5, wherein the alloy contains one or some elements among Be, B, C, Mg, Al, Si, P, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Se, Zr, Nb, Mo, Pd, A g , Cd, In, Sn, Pb, Sb, Te, Ir, Pt, Au, TI and Bi.
Claim 9
Dependent Claim
29 words
A semiconductor package connecting wire according to Claim 5, wherein the Brinell hardness number of the ball is in the range of H B 6 to H B 26.
Claim 10
Dependent Claim
86 words
A semiconductor device comprising: a substrate; and a semiconductor package electrically connected to the substrate through a bump contacts formed by attaching balls each formed by heating the tip of a fin alloy wire formed of an alloy material produced by quench solidifying an alloy containing Pb, Sn or In as a principal element; wherein wiring lines formed on the substrate or on the semiconductor package are formed of an aluminum alloy, and the Brinell hardness number of the balls is H B 6 or higher.
Claim 11
Dependent Claim
86 words
A semiconductor device comprising: a substrate; and a semiconductor package electrically connected to the substrate through a bump contacts formed by attaching balls each formed by heating the tip of a fin alloy wire formed of an alloy material produced by quench solidifying an alloy containing Pb, Sn or In as a principal element; wherein wiring lines formed on the substrate or on the semiconductor package are formed of an aluminum alloy, and the Brinell hardness number of the balls is H B 6 or higher.
Claim 12
Dependent Claim
38 words
A semiconductor device according to Claim 8, wherein the alloy wire is passed through a capillary tube employed in a wire bonder, and the balls are joined to the aluminum alloy wiring lines by a wire bonding method.
Claim 13
Dependent Claim
65 words
A semiconductor device according to Claim 8, wherein the alloy material forming the alloy wire contains, as an additive element or additive elements, one or some elements among Be, B, C, Mg, Al, Si, P, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Se, Zr, Nb, Mo, Pd, Ag, Cd, In, Sn, Pb, Sb, Te, Ir, Pt, Au, TI and Bi.
Claim 14
Dependent Claim
27 words
A semiconductor device according to Claim 8, wherein the Brinell hardness number of the ball is in the range of H B 6 to H B 26.
Claim 15
Dependent Claim
17 words
A semiconductor device according to Claim 8, wherein the semiconductor device is of a flip-chip mount type.
Claim 16
Dependent Claim
17 words
A semiconductor device according to Claim 8, wherein the semiconductor device is of tape carrier bonding type.
References Cited (Backward Citations)
No citation records indexed.
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