EP0433051A2
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EP
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A semiconductor laser device and a method of producing the same
Assignee: Sharp Corp
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Filing: 1990-12-12
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Granted: —
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Expires: 2010-12-12
Abstract
Abstract A semiconductor laser device having a mesa stripe whose side faces are facets of {111} planes is disclosed. In the laser device, a current blocking layer is formed on a semiconductor substrate whose main surface is a (100) plane, and a channel which is oriented along the <011> direction is formed in the current blocking layer. The mesa stripe is formed on the substrate within the channel by a selective growth technique. The mesa stripe has a multilayer structure including an active layer and is covered by a burying layer.
Inventors
- 👤 Fumihiro Konushi
- 👤 Hiroshi Nakatsu
- 👤 Kazuhiko Inoguchi
- 👤 Toshiyuki Okumura
- 👤 Akinori Seki
- 👤 Haruhisa Takiguchi
- 👤 Chitose Nakanishi
- 👤 Satoshi Sugahara
- 👤 Hiroaki Kudo
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 16:06
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/227; H01S5/10; H01S5/12; H01S5/40; H01S5/4025; H01S5/4031; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3218; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; H01S5/1228; H01S5/2054; H01S5/2059; H01S5/2201; H01S5/2205; H01S5/2213; H01S5/2272; H01S5/2275; H01S5/30; H01S5/32; H01S5/323; H01S5/3235; H01S5/32391; H01S5/4037
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
101 words
A semiconductor laser device comprising : a semiconductor substrate ; a current blocking layer formed on said semi- conductor substrate ; a channel formed in said current blocking layer, said channel reaching said substrate ; a mesa stripe having a multilayer structure and formed on said substrate within said channel, said multilayer structure including an active layer; a burying layer covering the side faces of said multilayer structure ; wherein the main surface of said substrate is a (100) plane, said channel is oriented along the <011> direction, and said side faces of said multilayer structure are facets of {111} planes.
Claim 2
Dependent Claim
101 words
A semiconductor laser device comprising : a semiconductor substrate ; a current blocking layer formed on said semi- conductor substrate ; a channel formed in said current blocking layer, said channel reaching said substrate ; a mesa stripe having a multilayer structure and formed on said substrate within said channel, said multilayer structure including an active layer; a burying layer covering the side faces of said multilayer structure ; wherein the main surface of said substrate is a (100) plane, said channel is oriented along the <011> direction, and said side faces of said multilayer structure are facets of {111} planes.
Claim 3
Dependent Claim
24 words
A semiconductor laser device according to claim 1, wherein the electrical resistance of said burying layer is higher than that of said multilayer structure.
Claim 4
Dependent Claim
16 words
A semiconductor laser device according to claim 1, wherein said burying layer consists of an SOG.
Claim 5
Dependent Claim
18 words
A semiconductor laser device according to claim 1, wherein said current blocking layer is made of semiconductor material.
Claim 6
Dependent Claim
18 words
A semiconductor laser device according to claim 1, wherein said current blocking layer is made of dielectric material.
Claim 7
Dependent Claim
20 words
A semiconductor laser device according to claim 1, wherein said current blocking layer is made of semiconductor material containing aluminum.
Claim 8
Independent Claim
77 words
A method of producing a semiconductor laser device comprising the steps of : forming a current blocking layer on a semiconductor substrate having a (100) plane as the main surface, forming in said current blocking layer a channel oriented in the <011> direction to reach said substrate ; and forming a multilayer structure including an active layer in the form of a mesa stripe on said substrate and within said channel by using a selective growth technique.
Claim 9
Independent Claim
77 words
A method of producing a semiconductor laser device comprising the steps of : forming a current blocking layer on a semiconductor substrate having a (100) plane as the main surface, forming in said current blocking layer a channel oriented in the <011> direction to reach said substrate ; and forming a multilayer structure including an active layer in the form of a mesa stripe on said substrate and within said channel by using a selective growth technique.
Claim 10
Dependent Claim
141 words
A semiconductor laser device comprising : a semiconductor substrate ; a dielectric film formed on said semiconductor substrate ; a channel formed in said dielectric film, said channel reaching said substrate ; a mesa stripe having a multilayer structure formed on said substrate within said channel, and said multilayer structure including an active layer ; and a burying layer covering the side faces of said multilayer structure ; wherein the main surface of said substrate is a (100) plane, said channel is oriented along the <011> direction, said side faces of said multilayer structure are facets of {111} planes, said multilayer structure comprises a lower portion including an active layer and an upper portion including a semiconductor layer having a refractive index smaller than that of said active layer, and said semiconductor layer covers the side faces of said active layer.
Claim 11
Dependent Claim
141 words
A semiconductor laser device comprising : a semiconductor substrate ; a dielectric film formed on said semiconductor substrate ; a channel formed in said dielectric film, said channel reaching said substrate ; a mesa stripe having a multilayer structure formed on said substrate within said channel, and said multilayer structure including an active layer ; and a burying layer covering the side faces of said multilayer structure ; wherein the main surface of said substrate is a (100) plane, said channel is oriented along the <011> direction, said side faces of said multilayer structure are facets of {111} planes, said multilayer structure comprises a lower portion including an active layer and an upper portion including a semiconductor layer having a refractive index smaller than that of said active layer, and said semiconductor layer covers the side faces of said active layer.
Claim 12
Dependent Claim
24 words
A semiconductor laser device according to claim 8, wherein the electrical resistance of said burying layer is higher than that of said multilayer structure.
Claim 13
Dependent Claim
16 words
A semiconductor laser device according to claim 8, wherein said burying layer consists of an SOG.
Claim 14
Independent Claim
104 words
A method of producing a semiconductor laser device comprising the steps of : forming a current blocking layer on a semiconductor substrate having a (100) plane as the main surface ; forming in the said current blocking layer a channel oriented in the <011> direction to reach the said substrate ; forming a multilayer structure including an active layer in the form of a mesa stripe on said substrate and within said channel using a selective growth technique ; and forming a semiconductor layer having a refractive index smaller than that of said active layer to cover the side faces of said active layer.
Claim 15
Independent Claim
104 words
A method of producing a semiconductor laser device comprising the steps of : forming a current blocking layer on a semiconductor substrate having a (100) plane as the main surface ; forming in the said current blocking layer a channel oriented in the <011> direction to reach the said substrate ; forming a multilayer structure including an active layer in the form of a mesa stripe on said substrate and within said channel using a selective growth technique ; and forming a semiconductor layer having a refractive index smaller than that of said active layer to cover the side faces of said active layer.
Claim 16
Dependent Claim
83 words
A semiconductor laser device comprising : a semiconductor substrate ; a channel formed on said semiconductor substrate ; a mesa stripe having a multilayer structure formed on said substrate within said channel, and said multilayer structure including an active layer ; and a burying layer covering the said multilayer structure ; wherein the main surface of said substrate is a (100) plane, said channel is oriented along the <011> direction, and said side face of said multilayer structure are facets of {111} planes.
Claim 17
Dependent Claim
83 words
A semiconductor laser device comprising : a semiconductor substrate ; a channel formed on said semiconductor substrate ; a mesa stripe having a multilayer structure formed on said substrate within said channel, and said multilayer structure including an active layer ; and a burying layer covering the said multilayer structure ; wherein the main surface of said substrate is a (100) plane, said channel is oriented along the <011> direction, and said side face of said multilayer structure are facets of {111} planes.
Claim 18
Dependent Claim
24 words
A semiconductor laser device according to claim 12, wherein the electrical resistance of said burying layer is higher than that of said multilayer structure.
Claim 19
Dependent Claim
16 words
A semiconductor laser device according to claim 12, wherein said burying layer consists of an SOG.
Claim 20
Independent Claim
63 words
A method of forming a semiconductor laser device comprising the steps of : forming a channel oriented in the <011> direction on a semiconductor substrate having a (100) plane as the main surface ; and forming a multilayer structure including an active layer in the form of a mesa stripe on said substrate and within said channel by using a selective growth technique.
Claim 21
Independent Claim
63 words
A method of forming a semiconductor laser device comprising the steps of : forming a channel oriented in the <011> direction on a semiconductor substrate having a (100) plane as the main surface ; and forming a multilayer structure including an active layer in the form of a mesa stripe on said substrate and within said channel by using a selective growth technique.
Claim 22
Dependent Claim
170 words
A semiconductor laser device comprising : a semiconductor substrate ; a stripe-like ridge structure formed on said semiconductor substrate ; a first multilayer structure, including a first active region, formed on the upper face of said ridge structure ; a second multilayer structure, including a second active region, formed on the one side face of said ridge structure ; a third multilayer structure, including a third active region, formed on the other side face of said ridge structure ; a burying layer covering said first, second, and third multilayer structures ; a first electrode, a second electrode, and a third electrode formed on said burying layer ; a first diffusion region formed in said burying layer, and electrically connecting said first multilayer structure to said first electrode ; a second diffusion region, formed in said burying layer, and electrically connecting said second multilayer structure to said second electrode ; and a third diffusion region, formed in said burying layer, and electrically connecting said third multilayer structure to said third electrode.
Claim 23
Dependent Claim
170 words
A semiconductor laser device comprising : a semiconductor substrate ; a stripe-like ridge structure formed on said semiconductor substrate ; a first multilayer structure, including a first active region, formed on the upper face of said ridge structure ; a second multilayer structure, including a second active region, formed on the one side face of said ridge structure ; a third multilayer structure, including a third active region, formed on the other side face of said ridge structure ; a burying layer covering said first, second, and third multilayer structures ; a first electrode, a second electrode, and a third electrode formed on said burying layer ; a first diffusion region formed in said burying layer, and electrically connecting said first multilayer structure to said first electrode ; a second diffusion region, formed in said burying layer, and electrically connecting said second multilayer structure to said second electrode ; and a third diffusion region, formed in said burying layer, and electrically connecting said third multilayer structure to said third electrode.
Claim 24
Dependent Claim
126 words
A semiconductor laser device comprising : a semiconductor substrate ; a terrace structure formed on said semiconductor substrate ; a first multilayer structure, including a first active region, formed on the upper level of said terrace structure ; a second multilayer structure, including a second active region, formed on the side face of the escarpment of said terrace structure ; a burying layer covering said first and second multilayer structures ; a first electrode, and a second electrode formed on said burying layer ; a first diffusion region formed in said burying layer, and electrically connecting said first multilayer structure to said first electrode ; and a second diffusion region, formed in said burying layer, and electrically connecting said second multilayer structure to said second electrode.
Claim 25
Dependent Claim
126 words
A semiconductor laser device comprising : a semiconductor substrate ; a terrace structure formed on said semiconductor substrate ; a first multilayer structure, including a first active region, formed on the upper level of said terrace structure ; a second multilayer structure, including a second active region, formed on the side face of the escarpment of said terrace structure ; a burying layer covering said first and second multilayer structures ; a first electrode, and a second electrode formed on said burying layer ; a first diffusion region formed in said burying layer, and electrically connecting said first multilayer structure to said first electrode ; and a second diffusion region, formed in said burying layer, and electrically connecting said second multilayer structure to said second electrode.
Claim 26
Independent Claim
97 words
A method of producing a semiconductor laser device comprising the steps of : forming on a semiconductor substrate with a (100) plane as the main surface a stripe-like ridge structure oriented in the <011> direction ; forming a first multilayer structure with a first active region on the upper face of said ridge structure, a second multilayer structure with a second active region on one side face of said ridge structure, and a third multilayer structure with a third active region on the other side face of the said ridge structure, by using a selective growth technique.
Claim 27
Independent Claim
97 words
A method of producing a semiconductor laser device comprising the steps of : forming on a semiconductor substrate with a (100) plane as the main surface a stripe-like ridge structure oriented in the <011> direction ; forming a first multilayer structure with a first active region on the upper face of said ridge structure, a second multilayer structure with a second active region on one side face of said ridge structure, and a third multilayer structure with a third active region on the other side face of the said ridge structure, by using a selective growth technique.
Claim 28
Independent Claim
85 words
A method of producing a semiconductor laser device comprising the steps of : forming, on a semiconductor substrate with a (100) plane as a main surface, a terrace structure having an escarpment with a side face running along the <011> direction, and forming, on the upper level of said terrace structure, a first multilayer structure including an active region, and a second multilayer structure including an active region on the side face of the escarpment of said terrace structure, by using a selective growth technique.
Claim 29
Independent Claim
85 words
A method of producing a semiconductor laser device comprising the steps of : forming, on a semiconductor substrate with a (100) plane as a main surface, a terrace structure having an escarpment with a side face running along the <011> direction, and forming, on the upper level of said terrace structure, a first multilayer structure including an active region, and a second multilayer structure including an active region on the side face of the escarpment of said terrace structure, by using a selective growth technique.
Claim 30
Dependent Claim
70 words
A semiconductor laser device having a mesa stripe including an active layer in which the side faces of the mesa stripe are covered by a burying layer, wherein said burying layer is an SOG film containing dopants, and the device further comprises a diffusion zone containing said dopants diffused from said burying layer, said diffusion zone being formed in the region of said mesa stripe adjacent to said burying layer.
Claim 31
Dependent Claim
70 words
A semiconductor laser device having a mesa stripe including an active layer in which the side faces of the mesa stripe are covered by a burying layer, wherein said burying layer is an SOG film containing dopants, and the device further comprises a diffusion zone containing said dopants diffused from said burying layer, said diffusion zone being formed in the region of said mesa stripe adjacent to said burying layer.
Claim 32
Independent Claim
71 words
A method of producing a semiconductor laser device having a mesa stripe including an active layer in which the side faces of the mesa stripe are covered by a burying layer, said method comprising the steps of : forming said burying layer from an SOG solution containing dopants ; and doping the region of said mesa stripe adjacent to said burying layer by diffusion of said dopants from said burying layer.
Claim 33
Independent Claim
71 words
A method of producing a semiconductor laser device having a mesa stripe including an active layer in which the side faces of the mesa stripe are covered by a burying layer, said method comprising the steps of : forming said burying layer from an SOG solution containing dopants ; and doping the region of said mesa stripe adjacent to said burying layer by diffusion of said dopants from said burying layer.
Claim 34
Dependent Claim
92 words
A distributed feedback type semiconductor laser device comprising: a semiconductor substrate; a mesa stripe having a multilayer structure and formed on said substrate, said multilayer structure including an active layer ; a light guide layer formed on the side face of said multilayer structure, on which a diffraction is ruled ; and a burying layer covering said light guide layer; wherein the main surface of said substrate is a (100) plane, said channel is oriented along the <011> direction, and said side faces of said multilayer structure are facets of {111} planes.
Claim 35
Dependent Claim
92 words
A distributed feedback type semiconductor laser device comprising: a semiconductor substrate; a mesa stripe having a multilayer structure and formed on said substrate, said multilayer structure including an active layer ; a light guide layer formed on the side face of said multilayer structure, on which a diffraction is ruled ; and a burying layer covering said light guide layer; wherein the main surface of said substrate is a (100) plane, said channel is oriented along the <011> direction, and said side faces of said multilayer structure are facets of {111} planes.
References Cited (Backward Citations)
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