EP0432905A2
Expired / Lapsed
EP
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Polyisophenylenesiloxane, production process thereof, and resist material and semiconductor device formed thereof
Assignee: Fujitsu Ltd
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Filing: 1990-11-14
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Granted: —
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Expires: 2010-11-14
Abstract
Abstract Novel polysilphenylenesiloxanes having a three-dimensional mesh structure of silphenylenesiloxane core surrounded by triorganosilyl groups, which have a good sensitivity to ionizing radiations such as deep ultraviolet rays, electron beams and X-rays, a high softening point of 400 °C or more, and a good resistance to 0 2 -plasma etching, and exhibit a high contrast and low swelling. These polysiphenylenesiloxanes are useful as a resist material, especially a top layer resist of the bi-level resist system and an interlevel dielectric or heat-resisting protective layer. The resist material has a high resolution because of a high contrast, low swelling and high thermal resistance thereof.
Inventors
- 👤 Keiji Watanabe
- 👤 Akira Oikawa
- 👤 Shun-Ichi Fukuyama
- 👤 Masaaki Yamagami
- 👤 Takahisa Namiki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 13:27
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/075; G03F7/0757; C; C08; C08G; C08G77/00; C08G77/48; C08G77/50; C08G77/52; Y; Y10; Y10S; Y10S430/00; Y10S430/143; Y10S430/167; Y10S430/168; Y10S438/00; Y10S438/942; Y10S438/948
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
52 words
A polysilphenylenesiloxane of formula I wherein Ph is phenylene; each R is independently selected from H and hydrocarbyl; and m and n are each positive integers; and wherein the polysilphenylenesiloxane has a three-dimension mesh structure of a silphenylenesiloxane core surrounded by triorganosilyl groups, and a weight-average molecular weight of 1,000 to 5,000,000.
Claim 2
Dependent Claim
52 words
A polysilphenylenesiloxane of formula I wherein Ph is phenylene; each R is independently selected from H and hydrocarbyl; and m and n are each positive integers; and wherein the polysilphenylenesiloxane has a three-dimension mesh structure of a silphenylenesiloxane core surrounded by triorganosilyl groups, and a weight-average molecular weight of 1,000 to 5,000,000.
Claim 3
Dependent Claim
21 words
A polysilphenylenesiloxane according to claim 1, in which hydrocarbyl is lower alkyl, halogenated lower alkyl, lower alkenyl, aryl or halogenated aryl.
Claim 4
Dependent Claim
19 words
A polysilphenylenesiloxane according to claim 1 or claim 2, which has a softening point of at least 400 C.
Claim 5
Dependent Claim
58 words
A process for the production of a polysilphenylenesiloxane according to any preceding claim, which comprises hydrolysing an organic silicon compound of formula II wherein R 1 to R s are independently selected from H, hydrocarbyl, trichlorosilyl and trialkoxysilyl, provided that at least two of these substituents are trichlorosilyl and/or trialkoxysilyl; followed by dehydration-condensation polymerisation of the hydrolysed product.
Claim 6
Dependent Claim
86 words
A process according to claim 4, which further comprises reacting the polymerised product with a reactant of the formula (R) 3 SiX, (R) 3 SiNHSi(R) 3 or (R) 3 SiOSi(R) 3 , wherein R is as defined in claim 1 or claim 2 and X is halogen, cyano, isocyano or isothiocyano, or a mixture thereof, thereby substituting the hydrogen atom of any remaining silanol group of the product, which did not react during the dehydration-condensation polymerisation, with a triorganosilyl group of the formula (R) 3 Si-.
Claim 7
Dependent Claim
20 words
A process according to claim 5, wherein at least 5% of the groups R and Ri to Rs is halogenated.
Claim 8
Dependent Claim
52 words
A process for the production of a polysilphenylenesiloxane according to any of claims 1 to 3, which comprises dissolving a reactant as defined in claim 5 in an organic solvent; and, to the resultant solution, gradually adding a compound of formula II as defined in claim 4, in the presence of water.
Claim 9
Dependent Claim
25 words
A bi-level resist system, in which the top layer is a negative-working resist material comprising a polysilphenylenesiloxane according to any of claims 1 to 3.
Claim 10
Dependent Claim
80 words
A process for the formation of a resist pattern, which comprises: applying a resist material comprising a polysilphenylenesiloxane according to any of claims 1 to 3, e.g. from a solution thereof in an organic solvent, onto a substrate; forming a desired latent image pattern by selectively exposing the resultant resist coating to ionising radiation, e.g. deep ultraviolet rays, election beams or X-rays; and developing the pattern-wise resist coating, e.g. with a suitable liquid developer, to remove the unexposed resist coating.
Claim 11
Dependent Claim
23 words
A semiconductor device which comprises a semiconductor substrate and a layer of a polysil- phenylenesiloxane according to any of claims 1 to 3.
Claim 12
Dependent Claim
25 words
A semiconductor device according to claim 10, in which the layer of polysilphenylenesiloxane is an interlevel dielectric of multilayer wiring or a heat-resisting protective layer.
Claim 13
Dependent Claim
85 words
A process, for the production of a semiconductor device, which comprises applying a resist material comprising a polysilphenylenesiloxane according to any of claims 1 to 3 onto a material capable of being selectively etched off the half-fabricated semiconductor device; selectively exposing the resulting resist coating to ionising radiation, to obtain a desired latent image pattern; developing the pattern-wise exposed resist coating to selectively remove the unexposed resist coating; and dry-etching the underlying material while using the resulting pattern of the resist material as a mask.
Claim 14
Dependent Claim
76 words
A process according to claim 9 or claim 12, wherein the substrate comprises a level bottom layer of a resist material, e.g. a phenolic novalak resin, on a base, e.g. a material which can be selectively etched having stepped portions, whereby the polysilphenylenesiloxane coating forms the top layer of a bi-level resist coating, and wherein the process additionally comprises transferring the pattern of the top layer to the bottom layer resist, e.g. by oxygen-reactive ion etching.
Claim 15
Dependent Claim
40 words
A process for the production of a semiconductor device, which comprises applying a polysil- phenylenesiloxane according to any of claims 1 to 3 in a pattern over a semiconductor substrate; and baking the resulting coating to form a polymeric layer.
Claim 16
Dependent Claim
14 words
A process according to claim 14, which further comprises selectively etching the polymeric layer.
References Cited (Backward Citations)
No citation records indexed.
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