EP0430168A2
Expired / Lapsed
EP
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Doping method of impurity into semiconductor trench wall
Assignee: Seiko Instruments Inc
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Filing: 1990-11-27
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Granted: —
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Expires: 2010-11-27
Abstract
Abstract A trench is formed in a semiconductor substrate to provide therein an inner wall. An inert film is removed from the trench inner wall to expose an active surface. A source gas containing an impurity is applied to the active surface to adsorb the impurity to thereby form thereon an impurity film. The substrate is annealed to diffuse the impurity into the inner wall to thereby dope the impurity.
Inventors
- 👤 Kenji C/O Seiko Instruments Inc. Aoki
- 👤 Tadao C/O Seiko Instruments Inc. Akamine
- 👤 Naoto C/O Seiko Instruments Inc. Saito
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 03:39
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/01; H10D1/025; H10D1/045; H10D1/047; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/17; H10P32/171; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0148; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
108 words
A method of doping an impurity comprising: first step of forming a cavity in a surface portion of a semiconductor substrate to provide an inner wall in the semiconductor substrate; second step of removing an inert film from a surface of the inner wall to expose an active surface; third step of applying to the active surface a gas having an impurity component to adsorb an impurity component on the active surface to thereby form an impurity film; and fourth step of heating the semiconductor substrate to diffuse the impurity component from the impurity film into the inner wall of the cavity and to activate the impurity component.
Claim 2
Dependent Claim
43 words
A method according to claim 1; wherein the third step comprises applying a diborane gas containing an impurity component of boron to an inner wall of a cavity formed in a silicon substrate while heating the substrate to form a boron impurity film.
Claim 3
Dependent Claim
36 words
A method according to claim 1; wherein the third and fourth steps are carried out to form a resistive layer along the inner wall of the cavity of a trench shape to produce a trench resistor.
Claim 4
Dependent Claim
60 words
A method according to claim 1; wherein the third and fourth steps are carried out to form one electrode layer along the inner wall of the cavity of a trench shape; and including the steps of forming a dielectric layer on said one electrode layer, and forming another electrode layer on the dielectric layer to thereby form a trench capacitor.
Claim 5
Dependent Claim
52 words
A method according to claim 1; wherein the third and fourth steps are carried out to form an impurity diffusion layer along the inner wall of the cavity of a trench shape; and including the step of filling the cavity with an insulating film to thereby form a trench device isolation region.
References Cited (Backward Citations)
No citation records indexed.
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