EP0426419A2
Expired / Lapsed
EP
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Semiconductor laser elements and method for the production thereof
Assignee: Furukawa Electric Co Ltd
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Filing: 1990-10-30
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Granted: —
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Expires: 2010-10-30
Abstract
Abstract A semiconductor laser element having a GaAs substrate (1) formed thereon with an active layer (4) of a strained quantom well construction provided with an In x Ga 1-x As strained quantom well layer and a GaAs barrier layer and clad layers (5a, 3a) formed above and below said active layer through epitaxial growth. A lattice mismatching rate of the clad layer with respect to the substrate is less than 10⁻³.
Inventors
- 👤 Teturo Ijichi
- 👤 Hiroshi Okamoto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 05:14
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/343; H01S5/34313; H01S5/20; H01S5/2054; H01S5/2081; H01S5/209; H01S5/22; H01S5/223; H01S5/2231; H01S5/3403; H01S5/3406
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
68 words
A semiconductor laser element having a GaAs substrate formed thereon with an active layer of a strained quantum well construction provided with an In x Ga 1-x As strained quantum well layer and a GaAs barrier layer and clad layers arranged up and down of said active layer through an epitaxial growth means, said clad layer being formed of In z Ga 1-z As y P 1-y .
Claim 2
Dependent Claim
68 words
A semiconductor laser element having a GaAs substrate formed thereon with an active layer of a strained quantum well construction provided with an In x Ga 1-x As strained quantum well layer and a GaAs barrier layer and clad layers arranged up and down of said active layer through an epitaxial growth means, said clad layer being formed of In z Ga 1-z As y P 1-y .
Claim 3
Dependent Claim
26 words
A semiconductor laser element according to claim 1, wherein a lattice mismatching rate of the clad layer with respect to the substrate is less than 10⁻³.
Claim 4
Dependent Claim
40 words
A semiconductor laser element according to claim 1, wherein a stress relieving layer formed of In 1-z Ga z P (provided z > 0.51) is interposed between the active layer and both the clad layers arranged up and down thereof.
Claim 5
Dependent Claim
71 words
A semiconductor laser element having a GaAs substrate formed thereon with an active layer of a strained quantum well construction provided with an In x Ga 1-x As strained quantum well layer and a GaAs barrier layer and clad layers arranged up and down of said active layer through an epitaxial growth means, said clad layer being formed of InGaP, said clad layer having a GaAs etching stop layer inserted therein.
Claim 6
Dependent Claim
71 words
A semiconductor laser element having a GaAs substrate formed thereon with an active layer of a strained quantum well construction provided with an In x Ga 1-x As strained quantum well layer and a GaAs barrier layer and clad layers arranged up and down of said active layer through an epitaxial growth means, said clad layer being formed of InGaP, said clad layer having a GaAs etching stop layer inserted therein.
Claim 7
Dependent Claim
26 words
A semiconductor laser element according to Claim 41 wherein a lattice mismatching rate of the clad layer with respect to the substrate is less than 10⁻³.
Claim 8
Independent Claim
120 words
A method for the production of a semiconductor laser element having a GaAs substrate formed thereon with an active layer of a strained quantum well construction provided with an In x Ga 1-x As strained quantum well layer and a GaAs barrier layer, InGaP clad layers arranged up and down of said active layer and a GaAs etching stop layer inserted into said clad layer through an epitaxial growth means, the method comprising the steps of etching a GaAs layer to an InGaP layer with an etching liquid containing either sulfuric acid, tartaric acid and ammonia and hydrogen peroxide and etching an InGaP layer to a GaAs layer with an etching liquid containing hydrochloric acid but not containing hydrogen peroxide.
Claim 9
Independent Claim
120 words
A method for the production of a semiconductor laser element having a GaAs substrate formed thereon with an active layer of a strained quantum well construction provided with an In x Ga 1-x As strained quantum well layer and a GaAs barrier layer, InGaP clad layers arranged up and down of said active layer and a GaAs etching stop layer inserted into said clad layer through an epitaxial growth means, the method comprising the steps of etching a GaAs layer to an InGaP layer with an etching liquid containing either sulfuric acid, tartaric acid and ammonia and hydrogen peroxide and etching an InGaP layer to a GaAs layer with an etching liquid containing hydrochloric acid but not containing hydrogen peroxide.
References Cited (Backward Citations)
No citation records indexed.
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